A5032094974- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Particle Detector Development and Performance
- Advancements in Semiconductor Devices and Circuit Design
- CCD and CMOS Imaging Sensors
- Electromagnetic Compatibility and Noise Suppression
- Radiation Detection and Scintillator Technologies
- Advanced Sensor Technologies Research
- Multilevel Inverters and Converters
- Advanced Semiconductor Detectors and Materials
- Radiation Effects in Electronics
- Advanced DC-DC Converters
- Plasma Diagnostics and Applications
- Advanced MEMS and NEMS Technologies
- Electrostatic Discharge in Electronics
- Gas Sensing Nanomaterials and Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Thermal properties of materials
- Induction Heating and Inverter Technology
- Aerospace Engineering and Energy Systems
- Spacecraft Dynamics and Control
- Diamond and Carbon-based Materials Research
- Particle physics theoretical and experimental studies
- Real-time simulation and control systems
- Turbomachinery Performance and Optimization
ETH Zurich
2017-2023
Messerschmitt-Bölkow-Blohm (Germany)
1988-1991
MBDA (Germany)
1990
Fraunhofer Institute for Microelectronic Circuits and Systems
1990
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning beam spot over die, a spatial periodicity was observed leakage current degradation, reflecting striped structure of MOSFET investigated. Two different mechanisms were degradation. At low drain bias (gate and source grounded), only gate-oxide (at JFET or neck region) is contributing ion-induced...
Silicon carbide (SiC) power devices have the potential to operate at high temperatures beyond capabilities of silicon devices. At increased temperatures, temperature-dependent material properties SiC die and package multilayer structure can influence electrothermal (ET) device performance. In this article, a new step-back-correction technique implemented in finite-difference-method-based thermal modeling tool is proposed reduce computational cost while maintaining good accuracy ET...
High sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation oxide blocking capability devices. At low bias, path is formed between gate, while at higher bias heavy-ion-induced mostly from source. An model proposed explain current transport mechanism for degraded SiC MOSFETs.
An advanced large-area silicon photodiode and X-ray detector, called the spiral drift was designed, produced, tested. The detector has a very small capacitance of about 0.1 pF leakage current under 1 nA at room temperature. All electrons generated silicon-silicon oxide interface are collected on guard rather than contributing to current. decrease reduces parallel noise detector. This anode with capacitively matched preamplifier may improve energy resolution detectors operating temperature 50...
A novel biasing concept made it possible to implement capacitive coupling in a double-sided silicon strip detector system with relatively simple production process. Capacitive eliminates the problem of electronic readout saturation caused by leaky strips. This advantage is particular value for n-side, where current differences input voltage levels electronics could make any measurements impossible. Double-sided increases position information and advantageous use systems compactness...
Capacitance–voltage (C–V) gate characteristics of power metal-oxide-semiconductor field-effect transistors ( <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s) play an important role in the dynamic device performance. C–V characterization structure is a necessary step for evaluating switching behavior and calibrating lumped equivalent capacitances compact models. This article presents comprehensive analysis on measurements silicon...
The phenomenon of reduced energy capability power metal-oxide-semiconductor field-effect transistors (MOSFETs) at high avalanche currents is investigated in commercial 1.2-kV 4H-SiC MOSFETs. Unclamped inductive switching (UIS) measurements as well electrical transport simulations are used to identify the current paths and maximum currents, providing insight into design limits. devices show a for above 52 A due latching parasitic bipolar junction transistor (BJT). BJT also limits switchable...
In this work, the performance of thin silicon carbide membranes as material for radiation hard X-ray beam position monitors (XBPMs) is investigated. Thermal and electrical behavior XBPMs made from single-crystal diamond compared using finite-element simulations. Fabricated devices are also with a 12 µm commercial polycrystalline XBPM at Swiss Light Source Paul Scherrer Institute. Results show that can reach equivalent transparencies while showing improved linearity, dynamics signal-to-noise...
The robustness under power cycling of three comparable silicon carbide MOSFETs in TO-247 packages from different manufacturers is investigated, with IGBTs serving as reference. method, especially the junction temperature measurement and best practices to ensure its accuracy, described. results give insight into reliability variability well aging behavior failure modes. We find a large between samples, both initial characteristics measured lifetime, signs semiconductor device degradation....
This paper presents an insight into the short circuit (SC) capability of Rohm’s discrete 1.2 kV, 80 mΩ state-of-the-art silicon carbide (SiC) double trench metal-oxide-semiconductor field effect transistor (MOSFET). SC measurements are performed to compare behavior Wolfspeed’s similarly rated planar MOSFET with Rohm devices. Short withstand time (SCWT) both designs under nominal operating conditions at room temperature is measured by performing destructive tests.
New generations of silicon carbide (SiC) based MOSFETs are commercially available from manufacturers featuring smaller chip size with higher power density demonstrating performance improvement compared to their previous generation counterparts. As the is small, volume dissipate energy during short-circuit (SC) like conditions reduced, leading increased self-heating device. Therefore, short circuit withstand time (SCWT) reduced. a reliability aspect, ruggedness extreme operating SC needs be...
Thermal analysis of Silicon Carbide (SiC) power semiconductor packages is a crucial design step to ensure highly reliable device performance at elevated temperatures. The square-root-t extrapolation method widely adopted approximate the temperature development within SiC die for short time transients when measurements cannot be performed. reduced thermal resistance leads smaller constants. Therefore, approximation heat propagation in devices also has include attach. This paper analyzes...
The variability of the temperature-dependent on-state resistance, R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dsON(T)</sub> , SiC power MOSFETs can significantly affect temperature distribution, and, hence, lifetime SiC-multi-chip modules. This work investigates impact xmlns:xlink="http://www.w3.org/1999/xlink">dsON</sub> (T) on distribution within a half-bridge module designed in-house. actual individual dies obtained from IR camera...
Optimized low-inductive layouting of the package interconnections and external PCBs bus-bars are necessary to benefit from Silicon Carbide (SiC) power devices, which allow inherently very fast switching transitions. In this paper, a comprehensive modeling procedure for highly accurate virtual dynamic characterization discrete SiC devices is described taking into account 3D geometry internal as input. The requirements discussed on an example commercial 1.2 kV, 80 mΩ Power MOSFET in standard...
In order to investigate the performance of SiC power MOSFETs and especially their applicability for parallelization, ten samples Cree's C2M0080120D MOSFET are investigated in terms electrical thermal behavior. A significant spread on-state resistance threshold voltage is observed, where maximum differences ΔI ≈ 10 mΩ, i.e. 12.5 % at a current 20 A, ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> 1 V, respectively. The parallelization...
High-speed optical imaging is used in conjunction with fast electrical measurements to advance the understanding of development short circuit failures silicon carbide power MOSFETs. Special samples are manufactured, which compatible and comparable TO-247 packages, but do not have any encapsulation. This allows observation die surface during test. The information on visible processes for a better sequence events leading up failure. Imagery destructive drain-source also obtained, as well...
This paper presents an analysis of power cycling (PC) capabilities two industry-standard packages with silicon carbide MOSFET dies: the discrete TO-247 package and a base-plate-less module silicone gel encapsulation. PC experiments show more than order magnitude higher number cycles to failure for TO-247. The significant spread in lifetime TO-packaged SiC MOSFETs by different manufacturers is correlated die thickness, bond wire diameter, wires. A electro-thermo-mechanical simulations point...
The authors have fabricated 280- mu m-thick fully depletable p-n charge -coupled devices (CCDs) on high-resistivity silicon ( approximately 2.5 k Omega -cm). Their operation is based the semiconductor drift-chamber principle. They are designed as energy- and position-sensitive radiation detectors for (minimum) ionizing particles X-ray imaging. Two-dimensional device modeling demonstrates basic charge-transfer mechanisms. Prototypes of been tested in static dynamic conditions. A preliminary...