G. Bertuccio
A5073590487- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- CCD and CMOS Imaging Sensors
- Advanced Semiconductor Detectors and Materials
- Nuclear Physics and Applications
- Advanced X-ray and CT Imaging
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- X-ray Spectroscopy and Fluorescence Analysis
- Gamma-ray bursts and supernovae
- Radiation Effects in Electronics
- Semiconductor materials and devices
- Medical Imaging Techniques and Applications
- Astrophysics and Cosmic Phenomena
- Analog and Mixed-Signal Circuit Design
- Pulsars and Gravitational Waves Research
- Semiconductor materials and interfaces
- Atomic and Subatomic Physics Research
- Silicon and Solar Cell Technologies
- Astrophysical Phenomena and Observations
- Integrated Circuits and Semiconductor Failure Analysis
- Electron and X-Ray Spectroscopy Techniques
- Radio Frequency Integrated Circuit Design
- Diamond and Carbon-based Materials Research
- Laser-Plasma Interactions and Diagnostics
Politecnico di Milano
2016-2025
Istituto Nazionale di Fisica Nucleare, Sezione di Milano
2015-2024
Institute for Space Astrophysics and Planetology
2014-2024
Istituto Nazionale di Fisica Nucleare, Roma Tor Vergata
2016-2024
Fondazione Politecnico di Milano
2008-2024
Istituto Nazionale di Fisica Nucleare
2005-2023
National Institute for Astrophysics
2012-2022
Institute of Nuclear Physics
2003-2020
University of Nova Gorica
2018
Fondazione Bruno Kessler
2016
We present a comprehensive review of the properties epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A characterization methods electrical contacting issues how these are performance presented. The most recent data charge transport parameters across Schottky barrier spectrometer Experimental results pixel detectors having equivalent noise...
Semiconductor detectors for in vivo dosimetry have served recent years as an important part of quality assurance radiotherapy. Silicon carbide (SiC) can represent a better semiconductor with respect to the more popular silicon (Si) thanks its physical characteristics such wide bandgap, high electron saturation velocity, lower effective atomic number, and radiation resistance X gamma rays. In this article we present investigation aimed at characterizing 4H-SiC epitaxial Schottky diodes...
We show that a spatially well-defined layer of boron dopants in hydrogen-enriched silicon target allows the production high yield alpha particles around 109 per steradian using nanosecond, low-contrast laser pulse with nominal intensity approximately 3×1016 W cm−2. This result can be ascribed to nature long laser-pulse interaction and expanding plasma, as well optimal geometry composition. The possibility an impact on future applications such nuclear fusion without neutron-induced...
In this paper a method for disentangling the various noise components in semiconductor radiation detector–amplifier systems is described and experimentally tested. A charge amplification scheme adopted measurements. It shown how an accurate estimate of series parallel white noise, 1/f f can be quickly obtained through multiparameter least-squares interpolation equivalent data system.
This work presents an analysis of silicon carbide (SiC) as semiconductor for the realization detectors soft X-rays (<20 keV). On basis experimental data on prototype SiC junctions, performance in X-ray spectroscopy using planar diode and drift have been estimated a wide range operating temperature (up to 150°C). It has derived that, due their extremely low reverse current density (4.7 pA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>...
To satisfy the increasing interest in integration of electronics onto optical and ionizing particle fully depleted detectors, a nonconventional JFET (junction field-effect transistor), designed to operate on completely depleted, 2-k Omega -cm resistivity silicon substrate, has been designed, fabricated, tested at room temperature. The devices show very low gate leakage current, output conductance, transconductance per unit width 3 mS/mm, pinch-off voltage -1.5 V. detectors makes possible...
The use of a low contrast nanosecond laser pulse with relatively intensity (3?????1016?W?cm?2) allowed the enhancing yield induced nuclear reactions in advanced solid targets. In particular ?ultraclean? proton?boron fusion reaction, producing energetic alpha particles without neutron generation, was chosen. A spatially well-defined layer boron dopants hydrogen-enriched silicon substrate used as target. combination specific target composition and temporal shape up to 109 per steradian. This...
Compared with the most commonly used silicon and germanium, which need to work at cryogenic or low temperatures decrease their noise levels, wide-bandgap compound semiconductors such as carbide allow operation of radiation detectors room temperature, high performance, without use any bulky expensive cooling equipment. In this work, we investigated electrical spectroscopic performance an innovative position-sensitive semiconductor detector in epitaxial 4H-SiC. The full depletion layer (124...
Radiation detectors based on Cadmium Zinc Telluride (CZT) compounds are becoming popular solutions thanks to their high detection efficiency, room temperature operation, and reliability in compact systems for medical, astrophysical, or industrial applications. However, despite a huge effort improve the technological process, CZT detectors' full potential has not been completely exploited when both spatial energy resolution required by application, especially at low energies (<10 keV),...
The efficient detection of low-energy X-rays at the keV level with best possible energy resolution requires application silicon drift detectors (SDDs) and advanced specific integrated circuits (ASICs). Their widespread use in material sciences, alongside dedicated basic science projects, has long been restricted to single, selected SDD elements working low temperatures. This is because limits incurring quite elaborated planar technology production process need reach very leakage current...
The Large Observatory For x-ray Timing (LOFT) was studied within ESA M3 Cosmic Vision framework and participated in the final down-selection for a launch slot 2022-2024. Thanks to unprecedented combination of effective area spectral resolution its main instrument, LOFT will study behaviour matter under extreme conditions, such as strong gravitational field innermost regions accretion flows close black holes neutron stars, supra-nuclear densities interior stars. science payload is based on...