A5103059122- CCD and CMOS Imaging Sensors
- Particle Detector Development and Performance
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Advanced Semiconductor Detectors and Materials
- Calibration and Measurement Techniques
- Semiconductor Quantum Structures and Devices
- Infrared Target Detection Methodologies
- Advanced Fiber Laser Technologies
- Physics and Engineering Research Articles
- Advancements in Semiconductor Devices and Circuit Design
- Photocathodes and Microchannel Plates
- Solid State Laser Technologies
- Corporate Finance and Governance
- Advanced X-ray and CT Imaging
- Advanced Control Systems Optimization
- Modeling and Simulation Systems
- Simulation Techniques and Applications
- Engineering and Materials Science Studies
- Business Process Modeling and Analysis
- Superconducting Materials and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Auditing, Earnings Management, Governance
- Adaptive optics and wavefront sensing
- Numerical methods for differential equations
Fraunhofer Institute for Applied Solid State Physics
2013-2024
Conference Board
2022
PNSensor (Germany)
2004-2016
Halbleiterlabor of the Max-Planck-Society
1993-2003
Max Planck Institute for Extraterrestrial Physics
1999
University of Tübingen
1998
Northampton Community College
1997
BASF (United States)
1992-1995
University of Stuttgart
1986-1990
Messerschmitt-Bölkow-Blohm (Germany)
1990
A low-noise, fast, charge-sensitive preamplifier was designed on high-resistivity, detector-grade silicon. It is built at the surface of a fully depleted region n-type silicon, allowing it to be placed very close detector anode. The uses classical input-cascode configuration with capacitor and high-value resistor in feedback loop. output stage can drive load up 20 pF. power dissipation 13 mW. amplifying elements are single-sided gate JFETs developed for this application. Preamplifiers...
GaSb-based semiconductor disk lasers (SDLs) cover the application-rich 2-3-μm wavelength range. The output power of these is mainly limited by active region heating and resulting thermal rollover, caused waste heat deposited in SDL chip. We present recent advances achieved 1) reducing load on chip quantum deficit, 2) removing more efficiently combining front- backside sinking. latter step was based extensive simulations distribution flow within submount, which are also presented. Combining...
A gallium antimonide‐based semiconductor disk laser (SDL) emitting 17 W of continuous wave output power at a heat sink temperature 20°C and an emission wavelength 2.02 μm are presented. This high‐output is achieved by optimising the thermal management reducing quantum deficit SDL structure.
Abstract Dynamic simulation of complex chemical processes . The detailed dynamic coupled process units in plant is gaining increasing importance as an important tool engineering and operation. This paper deals with basic problems the development a universally applicable simulator. General requirements are formulated. program package D IVA currently under outlined. Simulation start‐up phase simple production example demonstrates mode functioning potential Future work will concentrate on...
IN recent years various attempts have been made to investigate the effect which separation of ownership from control has on corporate behaviour. Studies by Elliott [4], Holl [8], Kamerschen [9] and Larner [i i] concluded that this little or no performance firm while studies Monsen et al. [I 5], Boudreaux [i] Radice 9] suggest allows owner-controlled firms report higher more variable profits than management-controlled firms. In addition these, Palmer 6], 7], [i8] obtained results suggesting...
Abstract The detailed dynamic simulation of coupled process units in chemical plants is gaining an increasing importance as a useful tool plant engineering and operation. outline the program package DIVA ( D ynamische Si mulation v erfahrenstechnischer A nlagen) which currently under development presented following. equations corresponding Jacobian matrix are generated automatically. full exploitation sparse techniques combination with stiff ODE o rdinary d ifferential e quation) solvers...
The (AlGaIn)(AsSb) material system has been shown to be ideally suited realize VECSELs for the 2-3 μm wavelength range. In this report we will present results on increasing output power of SDL chips with special emphasis 2.8 emission by means low quantum defect pumping. Further have investigated concepts a VECSEL-pumped Q-switched Ho:YAG laser in order convert high cw-power VECSEL into pulses peak power. Up 3.3 mJ pulse energy were achieved compact setup (corresponding 30 kW at 110 ns...
The pn-charge coupled device (pn-CCD) detector system was developed as the focal plane instrument of an x-ray telescope for European photon imaging camera (EPIC) on multi mirror (XMM) mission. second cornerstone mission Space Agency's Horizon 2000 plan performs high throughput and spectroscopy x- ray sky in domain 0.1 keV - 15 keV. will also be used a German astronomy satellite mission, called ABRIXAS (a broad-band all-sky survey). While XMM perform pointed observations. carry out all survey...