A5025651018- Radiation Effects in Electronics
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Particle Detector Development and Performance
- Graphite, nuclear technology, radiation studies
- Radiation Detection and Scintillator Technologies
- High-Energy Particle Collisions Research
- Semiconductor materials and interfaces
- Advanced ceramic materials synthesis
- Advancements in Semiconductor Devices and Circuit Design
- VLSI and Analog Circuit Testing
- Low-power high-performance VLSI design
- Silicon and Solar Cell Technologies
- Electrostatic Discharge in Electronics
- Particle Accelerators and Free-Electron Lasers
- Particle physics theoretical and experimental studies
- Superconducting Materials and Applications
- Radiation Therapy and Dosimetry
ETH Zurich
2020-2024
Advanced Power Electronics (United States)
2023
European Organization for Nuclear Research
2017-2021
University of Jyväskylä
2019-2021
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning beam spot over die, a spatial periodicity was observed leakage current degradation, reflecting striped structure of MOSFET investigated. Two different mechanisms were degradation. At low drain bias (gate and source grounded), only gate-oxide (at JFET or neck region) is contributing ion-induced...
The high-luminosity large hadron collider (HL-LHC) is a novel machine configuration which will rely on number of key innovative technologies to enhance the performance present LHC as 2025. upgrade also involve increased radiation levels that need be predicted by combining scaled measurements and calculations in order define qualification requirements for electronic systems. In this paper, we describe such levels, first all, introducing monitoring calculation approaches used machine, second,...
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench, and double-trench architectures. The results used to calculate the failure cross sections failure-in-time (FIT) rates at sea level. Enhanced gate drain leakage observed in some devices which did not exhibit a destructive during exposure. In particular, mechanism was for planar trench MOSFETs, first showing partial rupture path mostly between gate, similar what previously...
Deep level transient spectroscopy (DLTS) and minority carrier (MCTS) are used to investigate electrically active defects in commercial SiC Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS MCTS spectra of pristine samples analysed compared devices showing or not signatures Single Event Leakage Current (SELC) degradation. An additional peak labelled 'C' with an activation energy 0.17 eV below the conduction band edge is observed a sample degraded SELC.
Total-Ionizing Dose (TID) and Displacement Damage (DD) are investigated in SiC power MOSFETs at ultra-high doses with 10-keV X-ray 3-MeV protons. Significant parametric shifts the electrical responses of devices observed depending on bias condition fabrication technology. Worst TID degradation is measured when positive gate-bias applied during irradiation, due to charge trapping gate oxide. Devices built latest generation technology reveals a smaller subthreshold swing degradation, thanks...
High sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation oxide blocking capability devices. At low bias, path is formed between gate, while at higher bias heavy-ion-induced mostly from source. An model proposed explain current transport mechanism for degraded SiC MOSFETs.
The advantages of silicon carbide (SiC) power MOSFETs make this technology attractive for space, avionics and high-energy accelerator applications. However, the current commercial technologies are still susceptible to Single Event Effects (SEEs) latent damages induced by radiation environment. Two types damage were experimentally observed in SiC exposed heavy-ions. One is at bias voltages just below degradation onset it involves gate oxide. other type Burnout (SEB) limit, attributed...
Accelerated single event burnout (SEB) tests with 200 MeV protons and atmospheric-neutrons were performed for commercial SiC power MOSFETs different architectures ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i.e</i> ., planar gate, asymmetric trench symmetric trench). The average electric fields over the depletion layer width field distributions are reported tested conditions compared three architectures, confirming necessity of a lower...
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed heavy-ions. Devices showing single event leakage current (SELC) effects are analysed compared pristine samples. Common luminescence peaks defect centers localized thermal-SiO 2 identified, together with at characteristic wavelength defects.
This study explores high-energy aluminum (Al) implantation above 10 MeV as a fabrication process to facilitate the creation of deep doping regions in silicon carbide (SiC). Experimental investigations were conducted evaluate technical feasibility ultra-high energy and channeling into 4H-SiC. Ultra-high-energy Al implantations at 30 48 performed, revealing limitations such increased charge dispersion decreased current near accelerator limits. In contrast, 12, 15, 20 demonstrated successful...
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types devices experience leakage current degradation as well single-event burnout events. results were comparable, although the data may indicate a marginally lower thresholds for at linear energy transfer (LET). Slightly higher reverse bias threshold values also observed to previously published work.
SiC power MOSFETs with trench-gate structure have been irradiated heavy-ion broad-beam and microbeam. Microdose effects resulting in higher sub-threshold drain leakage were observed when irradiating the devices at low drain-source voltages reported for first time devices. Increasing bias during exposure, single-event current (SELC), characterized by microbreaks gate oxide was measured. The accumulation of eventually led to a complete rupture. differences respect planar-gate impact these...
This work presents the characterization of minority carrier traps in epitaxial n-type 4H-SiC after high fluence neutron irradiation using transient spectroscopy (MCTS) a temperature range 20 K to 660 K. Three trap levels are reported, labelled as X, B and Y, whose activation energies were estimated by Arrhenius analysis where level is assigned substitutional boron (B Si ). The dynamic behaviour was studied consecutive scans.
During the operation of LHC continuous particle losses create a radiation field in tunnel and adjacent caverns. Exposed electronics accelerator components show dose dependent accelerated aging effects stochastic Single Event Effects which can lead to faults downtime LHC. In order achieve an optimal life duration, position equipment is chosen dependency amplitude fields. Therefore, it crucial monitor prompt distributions along whole By using beam loss RadMon systems, during continuously...
The variety of beam losses produced in the Large Hadron Collider (LHC) creates a mixed and complex radiation field. During 2012, 2015 2016, Beam Loss Monitors RadMons were used to monitor inte-grated dose High Energy Hadrons fluence order anticipate electronics degradation inves-tigate cause failures. annual levels are compared; highlighting mechanisms pro-duction impact different squeeze crossing angle. In addition, increase beam-gas interaction is discussed comparing operations at 25 ns 50...
During the operation of Large Hadron Collider (LHC) continuous particle losses create a mixed radiation field in LHC tunnel and adjacent caverns. Exposed electronics accelerator components show dose dependent accelerated aging effects. In order to achieve an optimal lifetime associated damage, position equipment is chosen dependency amplitude fields. Based on analysis data from more than 3900 ionisation chamber beam loss monitors evolution levels monitored during operation. Normalising...