Point defects in silicon carbide (SiC) can act as charge carrier traps and have a pronounced impact on material properties such the mobility lifetime. Prominent among these is carbon vacancy (VC) with demonstrated detrimental effect minority lifetime 4H-SiC epitaxial layers. Hence, variety of methods for VC removal been proposed. Common to all that they involve some sort C-injection into epi-layer leads annihilation C interstitials (Ci) via reaction Ci+ →0̸. However, many studies injection...

Deep level transient spectroscopy (DLTS) and minority carrier (MCTS) are used to investigate electrically active defects in commercial SiC Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS MCTS spectra of pristine samples analysed compared devices showing or not signatures Single Event Leakage Current (SELC) degradation. An additional peak labelled 'C' with an activation energy 0.17 eV below the conduction band edge is observed a sample degraded SELC.

One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is improvement minority carrier lifetime as-grown epitaxial layers. Although Z1/2 has been identified as dominant limiting defect, we report on B-related centers being another source recombination and acting defects Combining time-resolved photoluminescence (TRPL) measurement near band edge emission 530 nm, deep level transient spectroscopy, spectroscopy (MCTS), it was found that B related levels lower...

Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper the band gap than thermal at room temperature (RT), resulting incomplete ionization RT. Therefore, a comprehensive understanding of defect energetics and how impurities introduced into material is imperative. Herein, we study impurity related epitaxial layers (epi-layers) grown by chemical vapor deposition (CVD) under various conditions using minority carrier transient spectroscopy (MCTS). We find two trap assigned to...

Ion implantation of 4H-SiC is one the crucial steps in fabrication power devices. This process results generation electrically active defects both implanted region and beyond. In this work, we explore created during Al-ion post annealing using low-energy muon spin rotation (LE-μSR) spectroscopy deep level transient (DLTS). Two sets samples, exposed to low fluence (LF) high (HF) Al, are examined with without annealing. The reveal that induced by Al extend into semiconductor, far beyond...

In this work, we have performed a detailed study of the defects created in bulk 4H-SiC after thermal oxidation and post annealing using deep level transient spectroscopy minority carrier (MCTS). The reveals formation several shallow majority traps bandgap. ON1 (EC−0.85 eV), ON2a (EC−1.05 ON2b (Ec−1.17 eV) levels are most dominant observed across all samples (EC denotes conduction band edge). Three Ti(k) (EC−0.17 E0.23 (EC−0.23 C1/2 (EC−0.36/0.39 samples. For defects, highest concentration is...

Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer-depth resolution (low-energy muon-spin-rotation spectroscopy, LE $\ensuremath{\mu}\mathrm{SR}$). In this work, we leverage capabilities $\ensuremath{\mu}\mathrm{SR}$ to perform a detailed investigation widely studied yet poorly understood ${\mathrm{Si}\mathrm{O}}_{2}$-$\mathrm{Si}\mathrm{C}$ interface. Thermally oxidized samples are investigated before and...

This paper shows how the gate impedance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$Z_{\text{gg}}$</tex> characterization of a SiC-power MOSFET can be used to investigate its dielectric-semiconductor interface quality distinguishing channel and JFET contributions. The is performed for SiC power MOSFETs with SiO <inf xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> high-k dielectrics. Different voltage- temperature-dependencies are...

Studying near-valence-band (<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><a:msub><a:mi>E</a:mi><a:mi mathvariant="normal">V</a:mi></a:msub></a:math>) defects at the insulator–<e:math xmlns:e="http://www.w3.org/1998/Math/MathML" overflow="scroll"><e:mi>n</e:mi></e:math>-type <h:math xmlns:h="http://www.w3.org/1998/Math/MathML" overflow="scroll"><h:mn>4</h:mn><h:mi>H</h:mi></h:math>-<k:math xmlns:k="http://www.w3.org/1998/Math/MathML"...

In this work, the impact of 200 MeV proton irradiation at a fluence 6 × 10 12 cm −2 on forward characteristics and breakdown behaviour nickel (Ni) titanium (Ti) Schottky barrier diodes is explored. An improvement in ideality factor, reduction threshold voltage, an increase voltage observed post irradiation. Point defects induced by are likely responsible for effects. Deep Level transient Spectroscopy (DLTS) measurements were performed irradiated to analyse created during gauge their...

Abstract Muon spin rotation with low‐energy muons (LE‐µSR) is a powerful nuclear method where electrical and magnetic properties of surface‐near regions thin films can be studied on length scale ≈200 nm. This study shows the potential utilizing for depth‐resolved characterization oxide‐semiconductor interfaces, i.e., silicon (Si) carbide (4H‐SiC). The performance semiconductor devices relies heavily quality interface; thus, investigation defects present in this region crucial to improve...

In this work, we compare different quasi-static capacitance-voltage measurement systems by analyzing 4H-SiC n-type MOS capacitors and studying the influence of systematic errors when extracting interface trap density (D it ). We show that extracted D strongly depends on calculation surface potential due to variations integration constant. addition, ramp-rate during is identified as a sensitive parameter whose noise level amplified in extraction.

Using low-energy muons, we map the charge carrier concentration as a function of depth and electric field across \SiOSi interface up to \SI{100}{\nano\meter} in Si-based MOS capacitors. The results show that formation anisotropic bond-centered muonium \MuBCz state Si serves direct measure local changes electronic structures. Different band-bending conditions could be distinguished, extension depletion width was directly extracted using localized stopping probing muons. Furthermore, electron...

Mesa- and trench-patterned surfaces of 4H-SiC(0001) 4°off wafers were structured in macrosteps using Si melting a SiC-Si-SiC sandwich configuration. spreading difficulties observed the case samples while attempts on mesa-patterned ones more successful. In latter case, parallel formed both dry-etched unetched areas though these rarely cross patterns edges. The proposed mechanism involved preferential etching at Si-C bilayer step edges fast lateral propagation along [1120] direction.

We demonstrate that the multi-photon absorption edge transient-current technique (edge-TCT) can be used to three-dimensionally map impact of defect distributions on device characteristics in situ inside bulk silicon carbide devices. A ∼5 μm wide defect-rich layer induced by proton irradiation at a depth ∼27 was investigated 4H-SiC samples and compared pristine case. Edge-TCT enables mapping position implantation peak as well identify space charge polarity around implanted region. The...

This work presents the characterization of minority carrier traps in epitaxial n-type 4H-SiC after high fluence neutron irradiation using transient spectroscopy (MCTS) a temperature range 20 K to 660 K. Three trap levels are reported, labelled as X, B and Y, whose activation energies were estimated by Arrhenius analysis where level is assigned substitutional boron (B Si ). The dynamic behaviour was studied consecutive scans.

Using positive muons as local probes implanted at low energy enables gathering information about the material of interest with nanometer depth resolution (low muon spin rotation spectroscopy (LE-$\mu$SR). In this work, we leverage capabilities LE-$\mu$SR to perform an investigation SiO$_\text{2}$-SiC interface. Thermally oxidized samples are investigated before and after annealing in nitric oxide (NO) argon (Ar) ambience. Thermal oxidation is found result structural changes both SiC crystal...

Plasmonic Nanotags In article number 2300209, Maria Mendes Martins and co-workers represent here the investigation of silicon dioxide-silicon carbide (SiO2-4H-SiC) system with nanometer depth-resolution low-energy muon spin rotation spectroscopy. Approximately 100% polarized muons (μ+) are used as probes in thin films. particular, interface formed between SiO2(on top) SiC (below), understanding which is crucial for high-power device applications, studied. By measuring final state different...

In this work, the interface between 4H-SiC and thermally grown SiO 2 is studied using low energy muon spin rotation (LE-μSR) spectroscopy. Samples oxidized at 1300 °C were annealed in NO or Ar ambience effect of annealing temperature on near region a depth resolved manner. NO-annealing expected to passivate defects, resulting reduction traps, which confirmed by electrical characterization. Introduction N during annealing, SiC matrix, results thin, carrier rich close leading an increase...

Muon spin rotation with low-energy muons (LE{\mu}SR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions thin films can be studied on length scale $\approx$\SI{200}{\nano\meter}. In this work, we show the potential utilizing for depth-resolved characterization oxide-semiconductor interfaces, i.e. silicon (Si) carbide (4H-SiC). Silicon dioxide (SiO$_2$) grown by plasma-enhanced chemical vapor deposition (PECVD) thermal oxidation SiO$_2$-semiconductor...