A5028926659- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Electromagnetic Compatibility and Noise Suppression
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Chemical Physics Studies
- Atomic and Molecular Physics
- Copper Interconnects and Reliability
- Silicon and Solar Cell Technologies
- Multilevel Inverters and Converters
- Thin-Film Transistor Technologies
- Ion-surface interactions and analysis
- Mass Spectrometry Techniques and Applications
- Spectroscopy and Laser Applications
- Nuclear Physics and Applications
- Ferroelectric and Negative Capacitance Devices
- Electrostatic Discharge in Electronics
- Quantum, superfluid, helium dynamics
- Spectroscopy and Quantum Chemical Studies
- Quantum optics and atomic interactions
- Induction Heating and Inverter Technology
- Laser-Matter Interactions and Applications
- Intermetallics and Advanced Alloy Properties
ABB (Switzerland)
2015-2024
RHI Magnesita (Switzerland)
2023-2024
Swisscom (Switzerland)
2024
Hitachi (Japan)
2022-2023
Max Planck Institute for Nuclear Physics
1997-2019
Forschungszentrum Jülich
2010-2015
Nanjing University
2014
University of Notre Dame
2014
Osaka University
2014
The University of Tokyo
2014
Inverters based on uniaxially tensile strained Si (sSi) nanowire (NW) tunneling field-effect transistors (TFETs) are fabricated. Tilted dopant implantation using the gate as a shadow mask allows self-aligned formation of p-i-n TFETs. The steep junctions formed by segregation at low temperatures improve band-to-band tunneling, resulting in higher on-currents n- and p-TFETs > 10 μA/μm <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub...
Guided by the Wentzel-Kramers–Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters Si TFETs are presented and experimentally verified. Along this line, improvements achieved implementation of uniaxial strain in nanowires (NW), benefits high-k/metal gates, newly engineered junctions as well effect scaling NW to diameters 10 nm demonstrated. Specifically, self-aligned ion implantation into source/drain silicide dopant segregation has been exploited achieve...
We present gate all around strained Si (sSi) nanowire array TFETs with high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> (64μA/μm at V xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> =1.0V). Pulsed I-V measurements provide small SS and record xmlns:xlink="http://www.w3.org/1999/xlink">60</sub> of 1×10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> μA/μm 300K due to the suppression trap assisted tunneling (TAT)....
Ultrathin Ni silicides were formed on silicon-on-insulator (SOI) and biaxially tensile strained SOI (SSOI) substrates. The layer thickness crucially determines the silicide phase formation: With a 3-nm layer, high-quality epitaxial NiSi <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layers grown at temperatures > 450°C, while was with 5-nm-thick layer. A very thin Pt interlayer, to incorporate into NiSi, improves thermal stability...
The relative dissociative recombination rate coefficients for specific vibrational states of ${\mathrm{HD}}^{+}$ have been measured. method is based on using merged electron and molecular ion beams in a heavy-ion storage ring together with fragment imaging techniques which allow us to probe the vibrational-state population stored beam as function time well final state dissociation. initial distribution (from Penning source) found be good agreement Franck-Condon model impact ionization, apart...
Experimental data are presented from three different heavy-ion storage rings (ASTRID in Aarhus, CRYRING Stockholm, and TSR Heidelberg) to assess the reliability of this experimental tool for extraction absolute rate coefficients cross sections dissociative recombination (DR). The DR reaction between ${\mathrm{HD}}^{+}$ electrons has been studied 0 30 eV on a dense energy grid. displays two characteristic local maxima around 9 16 eV. These influence analysis at smaller collision energies. We...
Rate coefficients for dissociative recombination of HD+ in selected vibrational states have been measured by a combination two molecular fragment imaging methods using the heavy-ion storage ring technique. Recombination yields state-to-state reaction rates. These rates are converted to rate level populations stored ion beam, derived from nuclear coordinate distributions on extracted ions. The results show strongly increasing high excitation, where additional dissociation routes open up,...
An approach to implement electrically robust MOSFETs in a functioning half-bridge will be investigated. For the first time, reverse conducting 3.3kV SiC have been fabricated with dilferent cell pitches from 14μm (p1.0) 26μm (pl.8) that are able withstand short circuit pulse of up 10μs and 9ms surge current event 15x nominal current. LinPak modules showing reduction switching loss by more than 90% compared silicon IGBT/diode half bridge.
Using the Coulomb explosion imaging method, change of relative population for first six vibrational states ${\mathrm{H}}_{2}^{+}$ during interaction with low-kinetic-energy electrons has been measured. A model based on rate coefficients dissociative recombination and superelastic collision processes is developed to explain time dependence populations. this model, we demonstrate that collisions...
In this paper, we develop a procedure to include in device simulators the barrier lowering (BL) effects that appear drain and source contacts of Schottky MOSFETs (SB-MOSFETs). We have checked it reproducing experimental results 20-nm gate-length SB-MOSFETs with NiSi epitaxial <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> S/D contacts. make use Wentzel-Kramers-Brillouin (WKB) approximation get tunneling probabilities through lowered...
We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing initially As + implanted activated silicon-on-insulator (SOI) substrates. The resistivity doped Si NWs the contact NiSi to NW are studied as functions ion implantation dose cross-sectional area wires. Strained show lower for all doping concentrations due their enhanced electron mobility compared case. An increase...
This paper reviews the recent progress of SiC MOSFETs rated above 3.3kV. The static and dynamic performance 3.3 6.5kV-rated will be evaluated benchmarked against similarly state-of-the-art Si IGBTs. A numerical comparison between high voltage (15kV) IGBTs also provided. attempt to comment on future challenges facing (HV) devices in technology.
The most probable structure of protonated acetylene ${\mathrm{C}}_{2}{\mathrm{H}}_{3}^{+}$ (the ``vinyl cation'') is inferred from both Coulomb-explosion experiments and finite-temperature ab initio quantum simulations followed by foil effects. It found that features significant deviations the planar bridged equilibrium as well Y-shaped local minimum structure, which are known static electronic calculations. In particular, ``axial protons'' feature a out-of-plane trans-bending due to...
We demonstrate the fabrication and characterization of epitaxial W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> C Schottky contacts into 4H-SiC via sputtering deposition ultra-thin followed by thermal annealing. The alloying reaction occurs below 600 °C, yielding a stable layer up to 1200 °C. is hexagonal, unexpectedly forming phase even at lowest annealing temperature, which predicted occur 1500 °C in bulk systems. based on films...
We demonstrate the first integration of high-k/metal gate stacks in vertical 1.2kV SiC power MOSFETs including static and dynamic characterization as well safe operation area (SOA). The high-k/4H-SiC MOS interface exhibits a remarkably low defect state density improved threshold voltage stability compared to conventional based on SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . Moreover, we achieved an impressive performance boost...
This paper reports a new edge termination for SiC power semiconductors. The novel concept, termed JTE (Junction Termination Extension) rings, combines the advantages of two classical techniques, namely floating p+ rings and JTE, to create more efficient robust termination. concept has been applied large area (5×5mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) Junction Barrier Schottky (JBS) diodes rated 1.7kV applications. Both...
We present an experimental and theoretical study of the branching ratios in dissociative recombination ${\mathrm{HD}}^{+}$ with low energy electrons. The results give direct insight into dynamics avoided curve crossing process between state Rydberg series neutral molecule. Excellent agreement theory, based on a Landau-Zener formulation process, is obtained.
Recent advances and new trends in high voltage SiC based MOSFETs are analyzed. The main focus is done on design optimization strategies for reducing the on-state resistance. Gate oxide treatments improving interface quality resulting a lower channel resistance reviewed as well solutions lowering JFET bulk components. 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> quadrant operation, short-circuit capability switching performance...
Electrically robust 6.5kV SiC MOSFETs are investigated for the static and dynamic performance, short circuit capability safe operation area (SOA). rated at were fabricated with different cell pitches from 12μm to 26μm that able withstand pulses of up 8μs have a turn-off SOA 4400V twice nominal current Inom. The paralleling four was tested represent realistic setup while showing substantial reduction in switching loss by more than 80% compared silicon IGBT Diode.