A5066591079- Luminescence Properties of Advanced Materials
- Perovskite Materials and Applications
- Radiation Detection and Scintillator Technologies
- Luminescence and Fluorescent Materials
- Gas Sensing Nanomaterials and Sensors
- Advanced Photocatalysis Techniques
- Glass properties and applications
- Microwave Dielectric Ceramics Synthesis
- Ammonia Synthesis and Nitrogen Reduction
- Acoustic Wave Phenomena Research
- bioluminescence and chemiluminescence research
- Boron and Carbon Nanomaterials Research
- Solid State Laser Technologies
- Metal and Thin Film Mechanics
- Solid-state spectroscopy and crystallography
- Aerodynamics and Acoustics in Jet Flows
- Thermal Expansion and Ionic Conductivity
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Transition Metal Oxide Nanomaterials
- Metamaterials and Metasurfaces Applications
- Crystal Structures and Properties
- Quantum Dots Synthesis And Properties
- Organic Light-Emitting Diodes Research
- Atomic and Subatomic Physics Research
Guangdong University of Technology
2015-2024
Guangzhou Vocational College of Science and Technology
2024
South China University of Technology
2016
Dalian University of Technology
2004-2008
Northeast Normal University
2006
Recently, trivalent chromium ion doped phosphors have exhibited significant application potential in broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs). However, developing an NIR phosphor with both broad emission bandwidth and excellent luminescence thermal stability is still a great challenge. Here, we demonstrate phosphor, ScF3:Cr3+, which can fulfill conditions simultaneously. The prepared show the range of 700 to 1100 nm, full width at half-maximum (FWHM)...
Broad-band near-infrared (NIR) phosphors are essential to assembling portable NIR light sources for applications in spectroscopy technology. However, developing inexpensive, efficient, and thermally stable broad-band remains a significant challenge. In this work, phosphate, KAlP2O7, with wide band gap suitable electronic environment Cr3+ equivalent substitution was selected as the host material. The synthesized KAlP2O7:Cr3+ material exhibits emission covering 650-1100 nm peak centered at 790...
Abstract The performance of the near‐infrared phosphor‐converted light‐emitting diodes (NIR pc‐LEDs) mainly depends on NIR emitting phosphors used. Cr 3+ doped materials can be excited by blue light chips, but their emission is located in NIR‐I region (650–1000 nm). Ni 2+ are NIR‐II (1000–1700 nm), they cannot effectively chips. Herein, , mono‐doped, and co‐doped Sr 2 GaTaO 6 prepared investigated. ions occupy two octahedral sites Ga Ta 5+ . co‐doping has achieved breakthroughs. One to shift...
Multifunctional near-infrared emitting Cr<sup>3+</sup>-doped Mg<sub>4</sub>Ga<sub>8</sub>Ge<sub>2</sub>O<sub>20</sub>particles with long persistent and photostimulated luminescence, photochromic properties.
Currently, near-infrared (NIR) light-emitting materials have been widely used in many fields, such as night vision, bioimaging, and nondestructive analysis. However, it is difficult to achieve multifunction certain NIR light emitting phosphor. Herein, we propose a new phosphor Mg