A5008739570- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Quantum Information and Cryptography
- Mechanical and Optical Resonators
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Silicon and Solar Cell Technologies
- Photonic Crystals and Applications
- Quantum optics and atomic interactions
- Thin-Film Transistor Technologies
- Quantum Computing Algorithms and Architecture
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Strong Light-Matter Interactions
- Integrated Circuits and Semiconductor Failure Analysis
- Magneto-Optical Properties and Applications
- Magnetic properties of thin films
- Advanced Fiber Laser Technologies
- Quantum Mechanics and Applications
- Quantum and Classical Electrodynamics
- Gyrotron and Vacuum Electronics Research
- Neural Networks and Reservoir Computing
- Advanced Photonic Communication Systems
Booz Allen Hamilton (United States)
2020-2024
Coquitlam College
2024
DEVCOM Army Research Laboratory
2024
United States Army Combat Capabilities Development Command
2024
Photon Etc (Canada)
2024
United States Naval Research Laboratory
2015-2022
KeyW (United States)
2019
National Academies of Sciences, Engineering, and Medicine
2015
Physical Sciences (United States)
2011-2013
University of Iowa
2010
We analyze the interaction of a nanomagnet (ferromagnetic) with single photonic mode cavity in fully quantum-mechanical treatment and find that exceptionally large quantum-coherent magnet-photon coupling can be achieved. Coupling terms excess several THz are predicted to achievable spherical approximately 1 mm radius 100 nm ferromagnetic resonance frequency 200 GHz. Eigenstates system correspond entangled states spin orientation photon number, which over 10{5} values each quantum number...
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding spin of single silicon vacancy centres carbide. Despite lack symmetry, system's particular wave function symmetry decouples its from magnetic electric fields, as well local strain. This provides a high-fidelity spin-to-photon interface...
Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties technological maturity. We calculate the multiparticle symmetry-adapted wave functions negatively charged vacancy defect hexagonal via use group theory density functional find effects spin-orbit spin-spin interactions on these states. Although we focused ${\text{V}}_{\mathrm{Si}}^{\ensuremath{-}}$ $4H$-SiC because its unique fine structure odd number active...
The silicon vacancy in carbide is a strong emergent candidate for applications quantum information processing and sensing. We perform room temperature optically detected magnetic resonance spin echo measurements on an ensemble of vacancies find the properties depend strongly field. decay time varies from less than $10\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{s}$ at low fields to $80\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}\mathrm{s}$ 68 mT, field-dependent modulation also...
Semiconductor defects allowing efficient interaction between spins and photons can serve as building blocks for scalable quantum networks. The silicon vacancy (${V}_{\text{Si}}$) in SiC possesses controllable, long-lived ground-state spins, adjustable fluorescence properties. However, its broad distribution of emitted-photon energies at room temperature means ${V}_{\text{Si}}$'s feasibility needs to be checked liquid-helium temperature, where phonon coupling is suppressed. This study finds a...
The silicon vacancy in SiC has long-lived electronic spin states that can be used for quantum sensing, communication, and computation, but knowledge of the optical transitions to measure control these been lacking. This study uses high-resolution laser spectroscopy individual vacancies 4$H$-SiC isolate spin-dependent transitions. Each defect two narrow, nearly lifetime-limited correspond different states, result quite spin-polarization dynamics when driven. These results are promising...
Abstract The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control solid state platforms such as color centers, rare earth ions, dots is particularly attractive for realizing on-chip. Here we propose the use of frequency-modulated optical transitions spectral engineering single emission. Using a scattering-matrix...
The coherent dynamics of a coupled photonic cavity and nanomagnet is explored as function size. For sufficiently strong coupling eigenstates involving highly entangled photon spin states are found, which can be combined to create states. As the size increases its mode also monotonically increases, well number involved in system's eigenstates. small nanomagnets crystalline anisotropy magnet strongly localized number, quenching potential for large macrospin approximation breaks down different...
A quantum mechanical superposition of a long-lived, localized phonon and matter excitation is described. We identify realization in strained silicon: low-lying donor transition (P or Li) driven solely by acoustic phonons at wavelengths where high-Q cavities can be built. This phonon-matter resonance shown to enter the strongly coupled regime "vacuum" Rabi frequency exceeds spontaneous emission into noncavity modes, leakage from cavity, anharmonicity scattering. introduce micropillar...
We show that implementations for quantum sensing with exceptional sensitivity and spatial resolution can be made using spin-$\frac{3}{2}$ semiconductor defect states. illustrate this the silicon monovacancy deep center in hexagonal SiC based on our rigorous derivation of defect's ground state its electronic optical properties. For a single ${\mathrm{V}}_{\mathrm{Si}}^{\ensuremath{-}}$ defect, we obtain magnetic field sensitivities capable detecting individual nuclear moments. also zero-field...
Saturable absorption, in which optical absorption decreases as the incident intensity increases, is commonly utilized visible and near-infrared for laser applications. In mid-infrared, most vibrational transitions are too weak fluences low to achieve saturable absorption. this work, we demonstrate a narrow band centered at 1983 cm–1 solution-phase W(CO)6 with readily accessible saturation fluence. Furthermore, system where coupling between strongly absorbing mode of an cavity gives rise two...
Commercially impactful quantum algorithms such as chemistry and Shor's algorithm require a number of qubits gates far beyond the capacity any existing processor. Distributed architectures, which scale horizontally by networking modules, provide route to commercial utility will eventually surpass capability single computing module. Such processors consume remote entanglement distributed between modules realize logic. Networked computers therefore rapidly distribute high fidelity modules. Here...
Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and demonstration integration into nanophotonic resonators. Recently, vacancy have been identified as a promising system with excellent spin optical properties. Here, we fully study spin-optical dynamics single center at hexagonal lattice sites, namely V1, 4H-polytype carbide. By utilizing resonant above-resonant sublifetime pulsed excitation,...
Abstract The negatively charged silicon vacancy center ( $${{\rm{V}}}_{{\rm{Si}}}^{-}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msubsup> <mml:mrow> <mml:mi>V</mml:mi> </mml:mrow> <mml:mi>Si</mml:mi> <mml:mo>−</mml:mo> </mml:msubsup> </mml:math> ) in carbide (SiC) is an emerging color for quantum technology covering sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these centers prevents us from...
The negatively-charged silicon vacancy center ($\rm V_{Si}^-$) in carbide (SiC) is an emerging color for quantum technology covering sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these centers prevents us achieving optimal operation conditions reaching maximum performance especially when integrated within photonics. Here, we establish all relevant intrinsic spin negatively charged $\rm V_{Si}^-$ 4H-SiC by in-depth...
Thin-Film Lithium Niobate is an emerging integrated photonic platform showing great promise due to its large second-order nonlinearity at microwave and optical frequencies, cryogenic compatibility, piezoelectric response, low loss visible near-infrared wavelengths. These properties enabled Mach–Zehnder interferometer-based devices demonstrate amplitude- in-phase/quadrature (IQ) modulation voltage levels compatible with complementary metal-oxide-semiconductor (CMOS) electronics. Maintaining...
The silicon T center's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing networking. However, key parameters of the spin-selective transitions remain undetermined or ambiguous literature. In paper, we present Hamiltonian center TX state determine transition from ${\mathrm{T}}_{0}$ to ${\mathrm{TX}}_{0}$ combined analysis published results,...
Arrays of coupled phonon cavities each including an impurity qubit in silicon are considered. We study experimentally feasible architectures that can exhibit quantum many-body phase transitions phonons, e.g., Mott insulator and superfluid states, due to a strong phonon-phonon interaction (which is mediated by the qubit-cavity coupling). investigate closed equilibrium systems as well driven dissipative nonequilibrium at zero nonzero temperatures. Our results indicate achievable both on-chip...
Thin-Film Lithium Niobate (TFLN) is an emerging integrated photonic platform showing great promise due to its large second-order nonlinearity at microwave and optical frequencies, cryogenic compatibility, piezoelectric response, low loss visible near-infrared wavelengths. These properties enabled Mach-Zehnder interferometer-based devices demonstrate amplitude- in-phase/quadrature (IQ) modulation voltage levels compatible with complementary metal-oxide-semiconductor (CMOS) electronics....
Spin qubits in silicon carbide (SiC) are promising systems for scalable applications quantum computing and communication thanks to the wafer-scale availability CMOS compatible fabrication technologies. Among these, vacancies (VSi) 4H-SiC stand out due demonstrated high-fidelity multi-qubit gates preserved spin-optical properties when integrated into nanophotonic waveguides resonators. In this work, we combine study of intrinsic spin dynamics nanofabrication engineering efforts advancing VSi...
The silicon vacancy in carbide has emerged as a promising quantum system embedded an industry-friendly platform due to its long-lived spin qubits that can effectively interface with photonic qubits. However, the unique number of 3/2 gives rise statistical mixture optically initialized ground-state sublevels, hindering successful application high-fidelity spin-photon interface. Recent experimental breakthroughs have demonstrated solution this challenge by achieving pure-state preparation...
Semiconductor components based on silicon carbide (SiC) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields, which typically described modeling simulations that calibrated nonlocal properties. So far, there no experimental methods allow 3D mapping both field concentrations free charge carriers inside an electronic device. To fulfill this information gap, we propose operando method utilizes single vacancy (VSi) centers...
The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing networking. However, key parameters of the spin-selective transitions remain undetermined or ambiguous literature. In paper we present Hamiltonian centre TX state determine transition from T$_0$ to TX$_0$ combined analysis published results, density functional theory,...
Photonic integrated circuits provide a scalable platform for photonics-based quantum technologies. However, integrating emitters and electro-optic cavities within this remains an open challenge proving to be major hurdle from implementing key functionalities photonics, such as single photon sources nonlinearities. Here, we address shortcoming with the hybrid integration of InAs/InP dot on foundry silicon photonics implementation photonic crystal in thin-film lithium niobate. Co-integrated...