Mustafa Atabey Buyukkaya

ORCID: 0000-0002-6220-1444
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About
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Research Areas
  • Photonic and Optical Devices
  • Photonic Crystals and Applications
  • Quantum Information and Cryptography
  • Semiconductor Quantum Structures and Devices
  • Neural Networks and Reservoir Computing
  • Mechanical and Optical Resonators
  • Semiconductor Lasers and Optical Devices
  • Optical Coatings and Gratings
  • Quantum optics and atomic interactions
  • Photorefractive and Nonlinear Optics
  • Near-Field Optical Microscopy
  • Plasmonic and Surface Plasmon Research
  • Advanced Photonic Communication Systems
  • Advanced Fiber Laser Technologies
  • Nonlinear Optical Materials Studies
  • Silicon and Solar Cell Technologies
  • Nanowire Synthesis and Applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Diamond and Carbon-based Materials Research
  • Silicon Nanostructures and Photoluminescence
  • Optical Network Technologies

University of Maryland, College Park
2018-2024

Joint Quantum Institute
2023

The integration of quantum emitters with integrated photonics enables complex photonic circuits that are necessary for implementation simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate because it can tightly confine light in small waveguides has a strong electro-optic effect switch modulate single photons at low power high speed. However, lacks efficient single-photon emitters, which essential scalable circuits. We demonstrate deterministic coupling...

10.1063/1.5054865 article EN Applied Physics Letters 2018-11-26

Abstract Controlling large-scale many-body quantum systems at the level of single photons and atomic is a central goal in information science technology. Intensive research development has propelled foundry-based silicon-on-insulator photonic integrated circuits to leading platform for optical control with individual mode programmability. However, integrating single-emitter tunability remains an open challenge. Here, we overcome this barrier through hybrid integration multiple InAs/InP...

10.1038/s41467-024-50208-0 article EN cc-by Nature Communications 2024-07-10

Color centers in Si could serve as both efficient quantum emitters and memories with long coherence times an all-silicon platform. Of the various known color centers, T-center holds particular promise because it possesses a spin ground state that has times, but this center exhibits excited lifetime results low-photon emission rate, requiring methods to extract photon high efficiency. We demonstrate high-efficiency single-photon from single using nanobeam. The nanobeam efficiently radiates...

10.1021/acsphotonics.3c01142 article EN ACS Photonics 2023-10-31

Fiber-coupled single photon sources are considered important components of photonics-based quantum information processors. Most fiber-coupled require careful alignment between fibers and emitters. In this work, we present an alignment-free fiber-integrated source based on InAs/InP dot emitting at telecom wavelengths. We designed a nanobeam containing the dots attached to fiber taper. The adiabatic tapered coupler enables efficient light coupling Using tungsten probe in focused ion beam...

10.1063/1.5089907 article EN Applied Physics Letters 2019-04-29

Telecom-wavelength single photons are essential components for long-distance quantum networks. However, bright and pure photon sources at telecom wavelengths remain challenging to achieve. Here, we demonstrate a telecom-wavelength source based on tapered nanobeam containing InAs/InP dots. The enables directional Gaussian-like far-field emission of the As result, using above-band excitation obtain an end-to-end brightness 4.1 ± 0.1% first-lens 27.0 ∼1300 nm wavelength. Furthermore, adopt...

10.1021/acs.nanolett.0c03680 article EN Nano Letters 2020-12-18

Photonic crystal nanobeam cavities are valued for their small mode volume, CMOS compatibility, and high coupling efficiency-crucial features various low-power photonic applications quantum information processing. However, despite potential, often suffer from low quality factors due to fabrication imperfections that create surface states optical absorption. In this work, we demonstrate InP with up 140% higher by applying a coating of Al2O3 via atomic layer deposition terminate dangling bonds...

10.1063/5.0190964 article EN cc-by Applied Physics Letters 2024-04-29

Coupling single photon emitters to surface plasmons provides a versatile ground for on chip quantum photonics. However, achieving good coupling efficiency requires precise alignment of both the position and dipole orientation emitter relative plasmonic mode. We demonstrate in 2-D semiconductor, WSe2 self-aligned with propagating plasmon polaritons silver-air-silver, metal-insulator-metal waveguides. The waveguide produces strain induced defects monolayer which are close mode favorable...

10.1063/1.5045727 article EN Applied Physics Letters 2018-11-05

We demonstrate a low power thermally induced optical bistability at telecom wavelengths and room temperature using nanobeam photonic crystal cavity embedded with an ensemble of quantum dots. The is transfer-printed onto the edge carrier chip for thermal isolation efficient coupling between waveguide setup. Reflectivity measurements performed tunable laser reveal thermo-optic nature nonlinearity. A threshold as 23 μW on/off response contrast 6.02 dB are achieved from moderately quality factor...

10.1063/5.0098003 article EN publisher-specific-oa Applied Physics Letters 2022-08-22

Telecom C-band single photons exhibit the lowest attenuation in optical fibers, enabling long-haul, quantum-secured communication. However, efficient coupling with fibers is crucial for these to be effective carriers long-distance transmission. We demonstrate an fiber-coupled photon source telecom using InAs/InP quantum dots coupled a tapered nanobeam. The nanobeam structure facilitates directional emission that mode-matched lensed fiber, resulting collection efficiency of up 65% from...

10.1021/acsphotonics.4c00625 article EN ACS Photonics 2024-06-18

Controlling large-scale many-body quantum systems at the level of single photons and atomic is a central goal in information science technology. Intensive research development has propelled foundry-based silicon-on-insulator photonic integrated circuits to leading platform for optical control with individual mode programmability. However, integrating single-emitter tunability remains an open challenge. Here, we overcome this barrier through hybrid integration multiple InAs/InP microchiplets...

10.48550/arxiv.2306.06460 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Integration of single-photon sources and detectors to silicon-based photonics opens the possibility complex circuits for quantum information processing. In this work, we demonstrate integration dots with a silicon photonic add-drop filter on-chip filtering routing telecom photons. A microdisk resonator acts as narrow that transfers dot emission filters background over wide wavelength range. Moreover, by tuning resonance microdisk, can control transmission drop through channels filter. This...

10.1364/oe.27.016882 article EN cc-by Optics Express 2019-06-03

InAs/InP quantum dots are excellent sources of telecom single-photon emission and among the most promising candidates for scalable photonic circuits. However, geometric differences in each dot lead to slightly different wavelengths hinder possibility generating multiple identical emitters on same chip. Stark tuning is an efficient technique overcome this issue as it can control energy individual through quantum-confined effect. Realizing has previously been limited shifts less than 0.8 meV...

10.1063/1.5082560 article EN Applied Physics Letters 2019-02-18

The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon’s limited optical properties toward broad range photonic applications. Hybrid modes are promising integrate such Si/III-V devices, but it remains unclear how utilize these achieve crystal cavities. Herein, using 3D finite-difference time-domain simulations, we propose hybrid Si-GaAs cavity design that operates at telecom wavelengths and can be fabricated without requiring careful alignment....

10.1364/oe.496081 article EN cc-by Optics Express 2023-10-11

In this study, we demonstrate the improvement of quality factors in InP nanobeam cavities using atomic layer deposition (ALD). By depositing a small amount Al<sub>2</sub>O<sub>3</sub> thin films on cavities, achieve up to 140% enhancement factors. This advancement cavity holds promise for optimizing when incorporating active materials like quantum dots and wells, enabling widespread utilization across diverse photonic applications.

10.1117/12.3000597 article EN 2024-01-26

Telecom C-band single photons exhibit the lowest attenuation in optical fibers, enabling long-haul quantum-secured communication. However, efficient coupling with fibers is crucial for these to be effective carriers long-distance transmission. In this work, we demonstrate an fiber-coupled photon source at telecom using InAs/InP quantum dots coupled a tapered nanobeam. The nanobeam structure facilitates directional emission that mode-matched lensed fiber, resulting collection efficiency of up...

10.48550/arxiv.2404.01562 preprint EN arXiv (Cornell University) 2024-04-01

Photonic integrated circuits provide a scalable platform for photonics-based quantum technologies. However, integrating emitters and electro-optic cavities within this remains an open challenge proving to be major hurdle from implementing key functionalities photonics, such as single photon sources nonlinearities. Here, we address shortcoming with the hybrid integration of InAs/InP dot on foundry silicon photonics implementation photonic crystal in thin-film lithium niobate. Co-integrated...

10.1117/12.3021136 article EN 2024-06-07

We present an efficient fiber-coupled indistinguishable photon source in the telecom C-band with InAs/InP quantum dots and a tapered nanobeam. It achieves 0.015 ± 0.003 single purity 0.84 0.06 two-photon interference visibility.

10.1364/fio.2024.jtu7b.1 article EN Frontiers in Optics + Laser Science 2022 (FIO, LS) 2024-01-01

The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward broad range photonic applications. Hybrid modes are promising make Si/III-V devices, but it is still unclear how engineer these crystal cavities. Herein, using 3D finite-difference time-domain simulation, hybrid Si-GaAs cavity design enables mode confinement in GaAs without directly patterning that operates at telecom wavelengths. consists patterned waveguide...

10.48550/arxiv.2302.03152 preprint EN other-oa arXiv (Cornell University) 2023-01-01

Here, we present a low threshold nanolaser design based on an alignment-free heterogeneous Si-GaAs photonic crystal cavity where the is only in silicon and GaAs wider slab.

10.1364/cleo_at.2023.atu3r.5 article EN 2023-01-01

We introduce hybrid integrated telecom single-photon sources on a commercial foundry multilayer silicon photonic chip. show above-band and resonant waveguide-coupled emission tunable via the DC Stark shift.

10.1364/cleo_fs.2023.ftu3c.7 article EN 2023-01-01

Color centers in Si could serve as both efficient quantum emitters and memories with long coherence times an all-silicon platform. Of the various known color centers, T center holds particular promise because it possesses a spin ground state that has times. But this exhibits excited lifetime which results low photon emission rate, requiring methods to extract high efficiency. We demonstrate high-efficiency single from using nanobeam. The nanobeam efficiently radiates light mode is...

10.48550/arxiv.2308.04541 preprint EN cc-by arXiv (Cornell University) 2023-01-01

Photonic crystal nanobeam cavities are valued for their small mode volume, CMOS compatibility, and high coupling efficiency crucial features various low-power photonic applications quantum information processing. However, despite potential, often suffer from low quality factors due to fabrication imperfections that create surface states optical absorption. In this work, we demonstrate InP with up 140% higher by applying a coating of Al$_2$O$_3$ via atomic layer deposition terminate dangling...

10.48550/arxiv.2312.05967 preprint EN other-oa arXiv (Cornell University) 2023-01-01

Fiber-integrated single photon device based on quantum dot nanobeam and fiber taper is proposed calculated. Total collection efficiency of 88% achieved into one arm taper. Broadband robust operation the system also confirmed.

10.1364/cleo_at.2018.jth2a.30 article EN Conference on Lasers and Electro-Optics 2018-01-01
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