Optically pumped semiconductor disk lasers are an important class of solid state lasers. Despite all their advantages, however, they suffer from heat incorporation into the active region caused by excess energy pump photons. To overcome limits common methods in thermal management, we realized a membrane external-cavity surface-emitting laser (MECSEL) consisting diamond spreader sandwiched design without monolithically integrated distributed Bragg reflector (DBR). This diamond-sandwich...

We demonstrate the first microchip semiconductor membrane external-cavity surface-emitting laser. This compact type of laser consists solely a gain region present as micron-thin membrane, sandwiched between two transparent heat spreaders. The spreaders have highly reflective coating on their outer facets, which assembles laser's plane-parallel solid-state cavity with total length just ~ 1 mm. One coatings slightly reduced reflectivity acts outcoupling mirror. (microchip MECSEL) is optically...

We report on passive mode locking of a semiconductor disk laser emitting pulses shorter than 250 fs at 664 nm with repetition frequency 836 MHz. A fast saturable absorber mirror fabricated by metal-organic vapor-phase epitaxy in near-resonant design was used to enable the operation. It includes two GaInP quantum wells located close surface and an additional fused silica coating. The emission spectrum shows superposition soliton-like part smaller “continuum” part.

We studied and compared single-side pumping (SSP) double-side (DSP) of a semiconductor membrane external-cavity surface-emitting laser (MECSEL). The MECSEL-active region was based on an AlGaAs quantum well structure embedded between two silicon carbide (SiC) wafer pieces that were used as transparent intra-cavity (IC) heat spreaders creating symmetrical cooling environment. gain targeted emission at 780 nm, wavelength is important for many applications, where the development high-brightness...

We present a membrane external-cavity surface-emitting laser (MECSEL) operating around 825 nm at room temperature. With tuning range of 22 nm, the MECSEL fills spectral gap between 810 and 830 extends wavelength coverage this category high-beam-quality semiconductor lasers. For high-power operation, pump spot size cavity mode can be enlarged in MECSELs. apply technique demonstrate power scaling. The maximum output is increased from 0.7 W to 1.4 W. Investigations on beam quality reveal...

An output power of 2.5 W at a wavelength 665 nm was obtained from quantum-well (QW) and multipass-pumped AlGaInP-based vertical-external-cavity surface-emitting laser operated heat sink temperature 10°C. Intracavity frequency doubling resulted in an 820 mW 333 nm. To the best our knowledge, these are highest continuous wave powers this type both fundamental frequency-doubled operation. In operation, further scaling by increasing pump-spot size increased to 3.3 W. However, level, highly...

We demonstrate an optically pumped semiconductor disk laser (OP-SDL) using InP quantum dots (QDs) as active material fabricated by metal-organic vapor-phase epitaxy. The QDs are grown within [(Al0.1Ga0.9)0.52In0.48]0.5P0.5 (abbr. Al0.1GaInP) barriers in order to achieve emission wavelength around 655 nm. present optical investigations of the region showing typical QD behavior like blue shift with increasing excitation power and single lines, which show anti-bunching intensity...

We report a distributed Bragg reflector‐free semiconductor disc laser which emits 10 W continuous wave output power at wavelength of 1007 nm when pumped with 40 808 nm, focused into 230 μm diameter spot on the gain chip. By introducing birefringent filter plate in cavity could be tuned from 995 to 1020 nm. The consisted chip located beam waist linear concentric resonator an coupling 2.15%. consists 1.574‐μm‐thick resonant periodic structure, ten In 0.13 Ga 0.87 As quantum wells embedded...

We present a passively mode-locked semiconductor disk laser (SDL) emitting at 650nm with intra-cavity second harmonic generation to the ultraviolet (UV) spectral range. Both gain and absorber structure contain InP quantum dots (QDs) as active material. In v-shaped cavity using samples end mirrors, beta barium borate (BBO) crystal is placed in front of saturable mirror (SESAM) for pulsed UV emission one two outcoupled beams. Autocorrelation (AC) measurements fundamental wavelength reveal FWHM...

We present a maximum continuous-wave optical output power of 260 mW from an optically pumped, frequency-doubled vertical-external-cavity surface-emitting laser with wavelengths ranging 325 to 332 nm. The device consists GaInP/AlGaInP multi-quantum-well structure grown using metal–organic vapour-phase epitaxy. use strain compensation in the active region chip for better performance at short wavelengths. In addition wavelength-tuning results UVA region, transfer measurements fundamental mode...

We demonstrate an optically pumped vertical external-cavity surface-emitting laser in a compact v-shaped cavity configuration for frequency doubling to the ultraviolet (UV) spectral range at ∼330 nm. The fundamental red emission is realized with metal-organic vapor-phase epitaxy grown (GaxIn1−x)0.5P0.5/[(AlxGa1−x)yIn1−y]0.5P0.5 multi-quantum-well structure. Second harmonic generation accomplished by using beta barium borate non-linear crystal generate maximum UV output powers exceeding 100...

The performance of a 665-nm GaInP disk laser operated continuous-wave at 15°C both in-well-pumped 640 nm and barrier pumped 532 is reported. efficiency with respect to the absorbed power was enhanced by 3.5 times when using 640-nm pump instead 532-nm pump. In-well pumping which based on absorption photons within quantum-well heterostructures gain region short-wavelength in spacer regions reduces quantum defect between photon hence heat generation. A slope 60% obtained in-well 15°C....

We report the mode-locked operation of an AlGaInP-based semiconductor disk laser without a saturable absorber. The active region containing 20 GaInP quantum wells is used in linear cavity with curved outcoupling mirror. gain chip optically pumped by 532 nm laser, and mode-locking achieved carefully adjusting pump spot size. For power 6.8 W, average output up to 30 mW reached at wavelength 666 nm. pulsed emission characterized using fast oscilloscope spectrum analyzer, demonstrating stable...

A membrane external-cavity surface-emitting laser (MECSEL) with an InAs/InP quantum dot (QD) based gain region is demonstrated. The pumping scheme employs a 90° off-axis parabolic mirror to focus the diode pump beam nearly circular spot. With this arrangement, QD MECSEL SiC heat spreaders produced 320 mW output power at room temperature direct emission in near-infrared 1.5 μm. We report record value of 86 nm for tuning range wavelength region, owing broad bandwidth and wide tunability MECSELs.

The operation of a semiconductor membrane external-cavity surface-emitting laser (MECSEL) employing gain with cavity design, which is non-resonant regarding the two - heat-spreader interfaces, presented. MECSEL delivers watt-level output power, in line state-of-the-art results. study provides new evidence that design criteria region are significantly relaxed compared to active regions distributed Bragg reflectors, for field distribution set by condition leading tight tolerances positioning...

An optically pumped vertical-external-cavity surface-emitting laser (VECSEL) for direct emission in the 740-790 nm wavelength region is reported. The gain structure based on 12 AlGaAs quantum wells. We demonstrate tuning between 747 and 788 free-running operation with a maximum power of 4.24 W (pump limited) heat sink temperature 14°C. This system addresses spectral gap not currently covered by VECSEL technology represents most powerful reported within 7XX-nm region.

We present a semiconductor disk laser mode-locked by saturable absorber mirror (SESAM) with emission in the red spectral range. Both gain and structure are fabricated metal-organic vapor-phase epitaxy an anti-resonant design using quantum dots as active material. A v-shaped cavity is used to tightly focus onto SESAM, producing pulses duration of about 1 ps at repetition rate 852 MHz.

We present the design and characterization of a zinc-indiffused periodically poled lithium-niobate ridge waveguide for second-harmonic generation ∼390nm light from 780 nm. use newly developed, broadband near-infrared vertical external-cavity surface-emitting laser (VECSEL) to investigate potential lower-footprint nonlinear optical pump sources as an alternative larger commercial systems. demonstrate VECSEL with output power 500 mW, containing intracavity birefringent filter spectral...

Membrane external-cavity surface-emitting lasers (MECSELs) have great potential of power scaling owing to the possibility double-side cooling and a thinner active structure. Here, we systematically investigate limits heat transfer capabilities with various spreader pumping parameters. The thermal simulations employ finite-element method are validated experimental results. reveal that lowers temperature by about factor two compared single-side when diamond silicon carbide (SiC) spreaders...

An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, AlGaInP claddings. emission wavelength could be tuned from 740 to 770 nm. development addresses the need for high brightness lasers at a range that has proven difficult reach. demonstrated exhibits polarization-related peculiarities, which cause polarization switching under...