Peng Zhou

ORCID: 0000-0002-5325-7294
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About
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Research Areas
  • Multiferroics and related materials
  • Ferroelectric and Piezoelectric Materials
  • Magnetic and transport properties of perovskites and related materials
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Sensor and Energy Harvesting Materials
  • Electronic and Structural Properties of Oxides
  • Advanced Memory and Neural Computing
  • Magnetic Properties and Synthesis of Ferrites
  • Magneto-Optical Properties and Applications
  • Semiconductor materials and devices
  • Electromagnetic wave absorption materials
  • Magnetic properties of thin films
  • Acoustic Wave Resonator Technologies
  • Dielectric materials and actuators
  • Underwater Acoustics Research
  • Advanced Condensed Matter Physics
  • Magnetic Properties and Applications
  • Conducting polymers and applications
  • Dielectric properties of ceramics
  • Electrospun Nanofibers in Biomedical Applications
  • Microwave Dielectric Ceramics Synthesis
  • Molecular Junctions and Nanostructures
  • Advancements in Battery Materials
  • Force Microscopy Techniques and Applications
  • Advanced Semiconductor Detectors and Materials

Tianjin University
2025

Hubei University
2015-2024

Ministry of Education of the People's Republic of China
2020-2024

University of Hong Kong
2024

Nanjing University of Science and Technology
2024

Changchun Institute of Optics, Fine Mechanics and Physics
2021-2024

Chinese Academy of Sciences
2024

Oakland University
2018-2021

North China Research Institute of Electro-optics
2021

Shanghai Institute of Quality Inspection and Technical Research
2021

With the development of wearable electronic devices and flexible biosensing technology, organic electrochemical transistors have received more attention. Fabric-based (F-OECTs) a broad application prospect in due to their substrate flexibility, breathability other advantages. This paper firstly introduces structure operation mechanism transistors, secondly focuses on relationship between F-OECT materials, fabrication methods, device structures, etc. transistor performance, finally describes...

10.1109/jsen.2024.3516773 article EN IEEE Sensors Journal 2025-01-01

Magnetoelectric (ME) effects in ferromagnetic-piezoelectric heterostructures manifest themselves as a change the polarization of structure an external magnetic field or magnetization electric field. The are used to create sensors, tunable electronic devices, and n1 ew data processing elements. To ensure thermal stability these it is important understand temperature dependence ME effect characteristics. In this paper, we investigated direct resonant monolithic heterostructure consisting...

10.31875/2410-4701.2025.12.01 article EN Journal of Material Science and Technology Research 2025-03-26

The coupling between magnetic and electric subsystems in composites of ferromagnetic ferroelectric phases is a product property that facilitated by mechanical strain arises due to magnetostriction the piezoelectric effect constituent phases. Such multiferroic are immense interests for studies on physics electromagnetic use variety applications. Here, we focus magneto-electric (ME) nanocomposites. Particular emphasis core-shell particles coaxial fibers, thin film heterostructures, planar...

10.1063/1.5038726 article EN Journal of Applied Physics 2018-08-10

Scanning tunneling microscopy has been used to investigate the effects of titanium impurities on charge-density-wave (CDW) phase in $1T\ensuremath{-}\mathrm{Ta}{\mathrm{S}}_{2}$. The average CDW wavelength directly measured and found increase with increasing concentration. However, local structure distorts significantly response random lattice potential associated distorted sites.

10.1103/physrevlett.61.2604 article EN Physical Review Letters 1988-11-28

Abstract A novel quasi 1–2 type magnetoelectric (ME) nanocomposite films composted of one‐dimensional CoFe 2 O 4 nanofibers and two‐dimensional PbZr 0.2 Ti 0.8 3 on flexible mica substrate have been designed fabricated. The ME coupling effects greatly enhanced due to the release clamping effect high strain transfer efficiency between large aspect ratio ferroelectric thin films. was confirmed by reducing thickness substrate, in which piezoelectric coefficient boosted decrease thickness....

10.1111/jace.19789 article EN Journal of the American Ceramic Society 2024-03-13

Resonant tunneling is a quantum-mechanical effect in which electron transport controlled by the discrete energy levels within quantum-well (QW) structure. A ferroelectric resonant diode (RTD) exploits switchable electric polarization state of QW barrier to tune device resistance. Here, discovery robust room-temperature ferroelectric-modulated and negative differential resistance (NDR) behaviors all-perovskite-oxide BaTiO3 /SrRuO3 /BaTiO3 structures reported. The current amplitude voltage are...

10.1002/adma.202205359 article EN Advanced Materials 2022-07-08

BiFeO3 thin films were fabricated by pulsed laser deposition on Nb–SrTiO3 (0 0 1), La2/3Sr1/3MnO3/SrTiO3 and SrRuO3/SrTiO3 1) electrode surfaces. All grew epitaxially along the substrates fully strained. The current–voltage curves of structures revealed that current level depended barrier height at ferroelectric/bottom interface. Resistive switching behavior was observed in grown all electrodes, which rationalized terms conductive filaments variation Schottky ferroelectric/electrode...

10.1088/1361-6463/aa9ae4 article EN Journal of Physics D Applied Physics 2017-11-15

The converse magnetoelectric effect (CME, $i.e.$ the magnetic response to a static electric field) in ferrite-ferroelectric composites is important for an innovative class of voltage-tunable, high-frequency devices. Technical challenges persist, though, due weak CME coupling, large ferromagnetic-resonance (FMR) linewidth, and need bias field. This study aims overcome those by using single-crystal-like nickel ferrite films exhibiting high magnetostriction narrow FMR linewidth. These present...

10.1103/physrevapplied.11.054045 article EN publisher-specific-oa Physical Review Applied 2019-05-16

Tunneling behaviors of composite ferroelectric tunnel junctions (FTJs) with a no-polar dielectric (DE) layer thickness from 1 to 4 nm were investigated. It is found that the low-resistance state (ON state) current decreases DE thickness, while high-resistance (OFF first and then increases. The largest tunneling electroresistance (TER) effect observed for 3 nm-thick layer, which corresponds lowest OFF-state current. Studies on electron transport mechanisms show direct dominates ON-state all...

10.1063/5.0001770 article EN Applied Physics Letters 2020-05-18

Piezoelectric nanogenerators (PNG) based on flexible inorganic nanomaterials have attracted significant attention due to their superior flexibility and high output performance. However, achieving nanomaterial dispersibility in piezoelectric composites is still a challenge for enhancing the electrical outputs. We implemented method increasing of zinc oxide (ZnO) nanoparticles implanted poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE)) by generating d-phenylalanine (d-phe) chelate with...

10.1021/acsaelm.2c00411 article EN ACS Applied Electronic Materials 2022-05-30

A model for the low-frequency magnetoelectric (ME) effect that takes into consideration bending deformation in a ferromagnetic and ferroelectric bilayer is presented. Past models, general, ignored influence of deformation. Based on solution equations elastic theory electrostatics, expressions ME voltage coefficients (MEVCs) sensitivity (MESCs) terms physical parameters materials geometric characteristic structure were obtained. Contributions from both planar deformations considered. The was...

10.3390/jcs5110287 article EN Journal of Composites Science 2021-10-28
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