A5101525487- Multiferroics and related materials
- Ferroelectric and Piezoelectric Materials
- Magnetic and transport properties of perovskites and related materials
- Radiation Detection and Scintillator Technologies
- Advanced Optical Sensing Technologies
- Acoustic Wave Resonator Technologies
- Ferroelectric and Negative Capacitance Devices
- Magnetic properties of thin films
- Particle Detector Development and Performance
- Atomic and Subatomic Physics Research
- Advanced Memory and Neural Computing
- Microwave Dielectric Ceramics Synthesis
- Neuroinflammation and Neurodegeneration Mechanisms
- Iron-based superconductors research
- S100 Proteins and Annexins
- Analytical Chemistry and Sensors
- Advanced Fluorescence Microscopy Techniques
- Rare-earth and actinide compounds
- ZnO doping and properties
- Carcinogens and Genotoxicity Assessment
- Nuclear Physics and Applications
- Medical Imaging Techniques and Applications
- Indoor Air Quality and Microbial Exposure
- Photonic Crystal and Fiber Optics
- Magnetic Properties and Synthesis of Ferrites
Hubei University
2014-2024
University of Shanghai for Science and Technology
2024
Science and Technology Department of Sichuan Province
2024
Naval Medical Research Command
2023
Shandong University
2023
Beijing Normal University
2009-2023
Capital Medical University
2023
University of Science and Technology of China
2022
Ministry of Education of the People's Republic of China
2020
Beijing University of Technology
2020
Abstract The temperature‐dependent Raman spectra of ferroelectric Bi 4− x Nd Ti 3 O 12 ( = 0, 0.5, 0.85) single crystals were recorded from 100 to 800 K. It was found that there is a critical content 0 between 0.5 and 0.85. 3+ ions prefer replace in pseudo‐perovskite layers when < , while they might begin incorporate into (Bi 2 ) 2+ ≥ . substitution leads decrease the ferroelectric–paraelectric transition temperature T c ). A monoclinic distortion orthorhombic structure occurs 4 at...
In recent years, inconsistent space groups of monoclinic B 1 a and orthorhombic 2 cb have been reported for the room-temperature ferroelectric phases both Bi 4 Ti 3 O 12 lanthanide-substituted . this article, electron diffraction technique is employed to unambiguously clarify crystal symmetries 3.15 Nd 0.85 single crystals at room temperature. All reflections observed from two match well with those derived 1, but 010, 030, {\overline 2}10 2}30 should be forbidden in case This fact indicates...
Electrically induced resistive switching (RS) effects have been proposed as the basis for future non-volatile memories. In this work, 9 nm-thick BiFeO3 (BFO) epitaxial thin films were deposited on (001)-oriented SrTiO3 substrates by pulsed laser deposition and their behaviors investigated. A large with ON/OFF ratio of ∼106 is observed, surpassing performance most random access memories ever reported. The conducting filament to dominate RS behavior in positive voltage region, while modulation...
The silicon photomultiplier (SiPM) is a promising semiconductor device for low-level light detection. recovery time, or the photon-counting rate of SiPM essential high-flux photon detection in such applications as counting computer tomography (CT). A with epitaxial quenching resistors (EQR SiPM) has advantages fabricating small APD microcells connected series lower resistors, therefore, cells low RC time constant and short can be expected. In this report, EQR been investigated using both...
A two-dimensional (2D) square-bordered position-sensitive (PS) silicon photomultiplier (SiPM) toward distortion-free performance with high spatial resolution is reported in this letter. The device, based on SiPM technology of an epitaxial quenching resistor, contains a central cap resistive region enclosed by narrow square-shaped metal ring contact located at the surface periphery. Four small output pads are connected to each corner read out signal charges. With active area 6.14 mm x mm,...
Epitaxial La2/3Sr1/3MnO3 thin films with different crystallographic orientations were fabricated on (001)-, (110)-, and (111)-oriented SrTiO3 substrates by pulsed laser deposition. Out-of-plane magnetic anisotropy was studied the field angle fixed at 0°, 30°, 60°, 90° relative to film surface. The results show that there is a remarkable dependence of magnetization direction orientation. Furthermore, (110)- stronger angular-dependent than (001) film, (110)-oriented one can reach saturated...
In this report, we present Time-Correlated Photon Counting (TCPC) technique and its applications in time-correlated Raman spectroscopy. The main difference between TCPC existing Single (TCSPC) is that the employs a photon-number-resolving photodetector (SiPM, silicon photomultiplier) measures exact photon number rather than counting single by reducing pulse light intensity, thus high measurement speed efficiency can be expected. A home-made spectrometer has demonstrated an Instrument...
We present a 2-D tetra-lateral positionsensitive silicon photomultiplier (SiPM), featuring epitaxial quenching resistors and an intrinsic continuous cap resistive layer for charge division in this letter. The device has attractive advantages of less output electrodes simple readout electronics, high position resolution, discrimination photon number, peak detection efficiency (PDE), compatible to regular SiPM with resistors, fabrication technology. barrel distortion was analyzed been greatly...
Here, we demonstrate write voltage-dependent electron transport mechanisms in Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel memristors. Tunable resistances associated with a large resistance variation were observed at room temperature. It is found that the mechanism of device depends not only on polarity, but also magnitude voltage. For positive voltages, memristor holds low state whereas for negative exhibits high state. However, an enhanced voltage causes transition behavior from direct...
Tunneling electroresistance (TER) effect was investigated in Pt/MgO/Pt/PbTiO3/Pt ferroelectric tunnel junctions (FTJs) theoretically. Compared to Pt/MgO/PbTiO3/Pt FTJs with the same composite barrier thickness (unit cells), a thicker Pt interlayer (2 ∼ 3 unit cells) could provide 1 6 orders of magnitude improvement TER ratio wide range polarization. Resonant tunneling and/or enhanced asymmetry potential energy profile induced by resonant-tunneling structure MgO/Pt/PbTiO3 is responsible for...
We present a one-dimensional (1-D) single-photon position-sensitive silicon photomultiplier (PS-SiPM) that can perform both photon number and position discriminations. The device, which features epitaxial quenching resistors continuous cap resistive layer for charge division, possesses two cathodes on top one anode at the bottom. PS-SiPM shows an active size of 2.2 mm × micro avalanche photodiode cell pitch ~10 μm. measurement error (PME) resolution device are analyzed. PME with low mean...
The silicon photomultiplier (SiPM) with epitaxial quenching resistors (EQR) is a novel SiPM technology currently under research and development. It has distinguished features of simple device structure, high fill factor, microcell density, large dynamic range, fast recovery time. In this paper, we report its latest developments aiming at positron emission tomography (PET) applications. EQR type active area <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML"...