A5103000980- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- solar cell performance optimization
- Chalcogenide Semiconductor Thin Films
- Cancer Research and Treatments
- Hepatocellular Carcinoma Treatment and Prognosis
- Cancer Research and Treatment
- Particle accelerators and beam dynamics
- Fault Detection and Control Systems
- Semiconductor materials and devices
- Reservoir Engineering and Simulation Methods
- Advanced MEMS and NEMS Technologies
- Advanced Semiconductor Detectors and Materials
- Nanowire Synthesis and Applications
- Particle Accelerators and Free-Electron Lasers
Universidad Politécnica de Madrid
2023
For optoelectronic devices from the near to far infrared, advantages of using ultrathin III-Sb layers as quantum wells or in superlattices are well known. However, these alloys suffer severe surface segregation problems, so that actual profiles very different nominal ones. Here, by inserting AlAs markers within structure, state-of-the-art transmission electron microscopy techniques were used precisely monitor incorporation/segregation Sb GaAsSb films (from 1 20 monolayers (MLs)). Our...
GaAsSb/GaAsN superlattices (SL) outperform GaAsSbN bulk material in solar cells but still suffer from imperfections. This work studies the presence of unintentional doping different structures by means a Mott-Schottky analysis. The SL structure is found to reduce 40% with respect material, correlating increased performance.