A5004932618- Semiconductor Quantum Structures and Devices
- Chalcogenide Semiconductor Thin Films
- Advanced Semiconductor Detectors and Materials
- solar cell performance optimization
- Nanowire Synthesis and Applications
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Gold and Silver Nanoparticles Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Photocatalysis Techniques
- Eosinophilic Disorders and Syndromes
- Energy Harvesting in Wireless Networks
- Advanced Chemical Physics Studies
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and devices
- Viral Infections and Vectors
- Vector-Borne Animal Diseases
- Eosinophilic Esophagitis
- Dermatological and Skeletal Disorders
- Bone Tumor Diagnosis and Treatments
- Muscle and Compartmental Disorders
- Congenital Anomalies and Fetal Surgery
- Galician and Iberian cultural studies
Universidad Politécnica de Madrid
2017-2023
Universidad Complutense de Madrid
2014-2017
Institute of Microelectronics
2016
Instituto de Cerámica y Vidrio
2016
Multi-junction solar cells made by assembling semiconductor materials with different bandgap energies have hold the record conversion efficiencies for many years and are currently approaching 50%. Theoretical efficiency limits make use of optimum designs right lattice constant-bandgap energy combination, which requires a 1.0-1.15 eV material lattice-matched to GaAs/Ge. Nevertheless, lack suitable is hindering achievement predicted efficiencies, since only candidates were up now complex...
A procedure to quantitatively analyse the relationship between wetting layer (WL) and quantum dots (QDs) as a whole in statistical way is proposed. As we will show manuscript, it allows determining, not only proportion of deposited InAs held WL, but also average In content inside QDs. First, amount measured for calibration three different WL structures without QDs by two methodologies: strain mappings high-resolution transmission electron microscopy images compositional with ChemiSTEM x-ray...
As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage temperature gradient molecular beam epitaxy reactor analyse impact on incorporation Sb N species according wafer radial composition gradients. The results from combination X-ray diffraction (XRD) energy-dispersive spectroscopies (EDS) show an opposite rate between as move away centre...
Photocarrier transport and extraction in GaAsSb/GaAsN type-II quantum well superlattices are investigated by means of inelastic calculations based on the non-equilibrium Green's function formalism. Evaluation local density states spectral current flow enables identification different regimes for carrier localization, transport, as a configurational parameters. These include number periods, thicknesses individual layers one period, built-in electric field, temperature operation. The results...
Mn doped β‐Ga 2 O 3 nanowires have been obtained by a thermal evaporation method on gallium oxide substrate. The growth temperature has varied in the range 1300–1500 °C. morphology of resulting structures found to depend this temperature, as observed images with scanning electron microscopy. grown sample at 1500 °C are both isolated microrods and interconnected rods. At lower temperatures, 1300 1400 °C, widths about 100 nm stair‐shaped microcrystals were found. Raman analysis demonstrates...
Abstract Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material technologies still remains challenging. We demonstrate localized surface plasmons self-assembled, hemispherical CdZnO metal-oxide nanoparticles on GaAs, a route enhance absorption photodetectors. In this system, two plasmon modes are identified at 5.3 and 2.7 μm, which yield an enhancement of light intensity underlying GaAs. case...
Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have received a great deal of attention for multijunction solar cell (MJSC) applications, as they present strongly intensified luminescence significant external quantum efficiency (EQE), respect to the GaAsSbN bulk layers. Despite difficulties in characterizing distribution N dilute III-V nitride alloys, this work we obtained N-compositional mappings before after rapid thermal annealing (RTA) both...
Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning the band gap and creation site controlled quantum dots through manipulation $\mathrm{N}\text{\ensuremath{-}}n\mathrm{H}$ complexes, wherein a atom is surrounded by $n$ hydrogen (H) atoms. Here we employ cross-sectional scanning tunneling microscopy (X-STM) to study these complexes in (110) surface at atomic scale. In addition that performed density functional theory (DFT) calculations determine properties complexes. We...