A5054183151- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Molecular Junctions and Nanostructures
- Semiconductor materials and interfaces
- Electron and X-Ray Spectroscopy Techniques
- GaN-based semiconductor devices and materials
- Quantum Dots Synthesis And Properties
- Photonic and Optical Devices
- Advanced Optical Sensing Technologies
Fudan University
1997-2019
State Key Laboratory of ASIC and System
2019
Shanghai University of Engineering Science
2018
In this letter, we demonstrate a novel junction field-effect transistor by transferring MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> onto silicon-on-insulator (SOI) substrate to control the thin Si channel. By combining high light absorption coefficient in with internal gain channel, device can be used for photodetection and achieve responsivity up <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
In this paper, we demonstrate experimentally a photodetector based on silicon-on-insulator substrate. The photosensing diode is formed in the substrate induced by backgate bias instead of doping. TCAD simulation conducted to confirm that field-induced junction performs similarly as doped p-n terms photodetection. A simplified process flow with low temperature developed fabricate device, which can save implantation step and reduce cost. photoresponses device under various biases, light...
In this paper, the application of zero subthreshold swing and impact ionization FET (Z <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -FET) for photodetection is studied with TCAD simulation. Dynamic coupling effect utilized to form carrier injection barriers in partially depleted silicon-on-insulator (PD-SOI) film. Photoelectron accumulation at front gate interface lowers hole barrier modulates turn-on voltage. The light-triggering...
The diluted S2Cl2 solution has been employed to treat the GaAs/AlGaAs heterojunction bipolar transistors. It is shown that dc characteristics of transistor could be improved significantly and passivation effect not subject degradation by heating 150 °C in atmospheric air immersing water. A real-time monitoring technique proposed which provides good control stopping point.
A vapor-deposited GaS passivating layer is formed on GaAs(100) with α-Ga2S3 powder used as a single-source precursor for the deposition. The films grown show near-single-crystal quality, and are characterized by Auger electron spectroscopy x-ray diffraction spectroscopy. band-edge discontinuities of GaS/GaAs heterojunction determined to be 1.9 eV valence band 0.3 conduction band, respectively, ultraviolet photoelectron electron-energy-loss It also observed that valence-band structure...
We have proposed and demonstrated experimentally a novel semiconductor photodetector based on fully depleted silicon-on-insulator (FD-SOI) substrate. The device utilizes the interface coupling effect uniquely found in FD-SOI MOSFET, which photo-generated electrons accumulate at top modulate hole current bottom interface. responsivity of this reaches more than 1×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> A/W and, unlike other...
We present a photodetector based on silicon-on-insulator (SOI) substrate with high responsivity. The device is fabricated by CMOS compatible process at low-temperature. structure design and fabrication technology are discussed. test results indicate that this detector has sensitivity in the wavelength ranging from 300 nm to 1000 nm. impact of light intensity responsivity have been studied.