Pao Tai Lin

ORCID: 0000-0002-5417-6920
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Photonic and Optical Devices
  • Photonic Crystals and Applications
  • Analytical Chemistry and Sensors
  • Advanced Fiber Optic Sensors
  • Advanced Fiber Laser Technologies
  • Semiconductor Lasers and Optical Devices
  • Spectroscopy and Laser Applications
  • Phase-change materials and chalcogenides
  • Optical Coatings and Gratings
  • Mechanical and Optical Resonators
  • Photorefractive and Nonlinear Optics
  • Advanced Chemical Sensor Technologies
  • Microfluidic and Capillary Electrophoresis Applications
  • Nonlinear Optical Materials Studies
  • Optical Network Technologies
  • Advanced Photonic Communication Systems
  • Gas Sensing Nanomaterials and Sensors
  • Orbital Angular Momentum in Optics
  • Acoustic Wave Resonator Technologies
  • Biosensors and Analytical Detection
  • Advanced biosensing and bioanalysis techniques
  • Chalcogenide Semiconductor Thin Films
  • Spectroscopy Techniques in Biomedical and Chemical Research
  • Quantum Dots Synthesis And Properties
  • Advanced Optical Network Technologies

Texas A&M University
2016-2024

College Station Medical Center
2020

Materials Science & Engineering
2019

University of Central Florida
2004-2018

University of Siena
2017

University of Rhode Island
2017

Brown University
2017

Massachusetts Institute of Technology
2011-2016

Materials Processing (United States)
2012-2016

Singapore University of Technology and Design
2014-2016

Discusses wavelength assignment for lightpaths. We study WDM networks in the form of rings and higher level as SONET/SDH self-healing rings. This view changes goal (WLA) vs. previous work on subject a number aspects. First, pair SONET add/drop multiplexers (ADMs) terminates each lightpath. These ADMs also terminate adjacent lightpaths to rings, implying that WLA has support this type sharing. Second, following Gerstal et al. (1998), we argue first-order optimization should be minimize...

10.1109/infcom.1998.659642 article EN 2002-11-27

We demonstrate an on-chip sensor for room-temperature detection of methane gas using a broadband spiral chalcogenide glass waveguide coupled with off-chip laser and detector. The is fabricated UV lithography patterning lift-off after thermal evaporation. measure the intensity change due to presence concentration in mid-infrared (MIR) range. This work provides approach planar MIR sensing.

10.1063/1.4945667 article EN Applied Physics Letters 2016-04-04

We demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon fabricated using optical lithography and a lift-off process. The exhibited high intrinsic quality factor of 2×105 at 5.2 μm wavelength, which is among the highest values reported in on-chip mid-infrared (mid-IR) photonic devices. resonator can serve as key building block for mid-IR planar circuits.

10.1364/ol.38.001470 article EN Optics Letters 2013-04-25

A mid-infrared (mid-IR) spectrometer for label-free on-chip chemical sensing was developed using an engineered nanofluidic channel consisting of a Si-liquid-Si slot-structure. Utilizing the large refractive index contrast (Δn ∼ 2) between liquid core waveguide and Si cladding, broadband mid-IR lightwave can be efficiently guided confined within capillary (≤100 nm wide). The optical-field enhancement, together with direct interaction probe light analyte, increased sensitivity detection by 50...

10.1021/nl403817z article EN Nano Letters 2013-12-13

Towards a future lab-on-a-chip spectrometer, we demonstrate compact chip-scale air-clad silicon pedestal waveguide as Mid-Infrared (Mid-IR) sensor capable of in situ monitoring organic solvents. The is planar crystalline waveguide, which highly transparent, between λ = 1.3 and 6.5 μm, so that its operational spectral range covers most characteristic chemical absorption bands due to bonds such C–H, N–H, O–H, C–C, N–O, CO, CN, opposed conventional UV, Vis, Near-IR sensors, use weaker overtones...

10.1039/c3lc50177a article EN Lab on a Chip 2013-01-01

A chip-scale and label-free glucose sensor is developed by utilizing mid-IR silicon nitride waveguides. For a dry covered waveguide, strong intensity attenuation found at λ > 2.73 μm due to the OH stretches absorption. Using this characteristic spectrum, detection limit less than 0.5 ng experimentally demonstrated.

10.1002/adom.201600440 article EN Advanced Optical Materials 2016-08-23

Abstract Mid-infrared (mid-IR) sensors consisting of silicon nitride (SiN) waveguides were designed and tested to detect volatile organic compounds (VOCs). SiN thin films, prepared by low-pressure chemical vapor deposition (LPCVD), have a broad mid-IR transparent region lower refractive index (n = 2.0) than conventional materials such as Si 3.4), which leads stronger evanescent wave therefore higher sensitivity, confirmed finite-difference eigenmode (FDE) calculation. Further, in-situ...

10.1038/s41598-022-09597-9 article EN cc-by Scientific Reports 2022-04-02

This paper considers grooming of low speed traffic into high lightpaths in a WDM based optical ring with primary goal reducing the cost entire system, which is dominated by SONET transmission equipment connected to ring. The attempts enumerate architectural options provided arrive at cost-effective solution, including unidirectional path-switched rings (UPSR) and bidirectional line-switched (BLSR), use back-to-back connections between ADMs reduce overall cost, different speeds (OC-48 OC-12)....

10.1109/infcom.1999.751460 article EN 1999-01-01

A monolithic Mid-IR microphotonics platform is demonstrated by engineered Si-rich and low-stress silicon nitride (SiNx) thin films. measured optical transmission loss of < 0.2 dB cm-1 achieved over a broad mid-IR spectrum. Using the SiNx film an efficient directional coupler developed that shows high extinction ratio 7 upon wavelength scanning (λ = 2.45–2.65 μm).

10.1002/adom.201300205 article EN Advanced Optical Materials 2013-07-17

Integrated mid-infrared devices including (i) straight/bent waveguides and (ii) directional couplers are demonstrated on silicon nitride (SiN) thin films prepared by optimized low-pressure chemical vapor deposition. The deposited SiN film has a broad spectral transparency from visible up to wavelength of λ = 8.5 μm (as seen Fourier transform infrared spectroscopy). Our waveguide shows dominant fundamental mode with an optical loss 2.1 dB/cm at 3.7 μm. In addition, we demonstrate efficient...

10.1063/1.4812332 article EN Applied Physics Letters 2013-06-24

Toward mid-infrared (mid-IR) silicon microphotonic circuits, we demonstrate broadband on-chip structures, such as: (i) straight and bent waveguides (ii) beam splitters, utilizing an air-clad pedestal configuration which eliminates the need for typical mid-IR-lossy oxide cladding. We illustrate a sophisticated fabrication process that can create high-quality structures in crystalline silicon, while preserving its mid-IR transparency. A fundamental waveguide mode is observed between λ=2.5 μm...

10.1364/ol.38.001031 article EN Optics Letters 2013-03-20

Abstract Mid‐infrared (mid‐IR) microphotonic devices including (i) straight/bent waveguides and (ii) Y‐junction beam splitters are developed on thin films of CMOS‐compatible sputter deposited aluminum nitride (AlN)‐on‐silicon. An optical loss 0.83 dB/cm at λ = 2.5 µm is achieved. In addition, an efficient mid‐IR 50:50 splitter demonstrated over 200 nm spectral bandwidth along with a &lt;2% power difference between adjacent channels. With the inherent advantage ultra‐wide transparent window...

10.1002/lpor.201300176 article EN Laser & Photonics Review 2014-01-13

A positive-tone 2D direct-write technique that can achieve sub-wavelength patterning by non-linear overlap effects in a conventional polymer system is described. The involves relatively inexpensive free-space optics, skips the usual development step, and promises possibility of lithographic method solvent-free.

10.1002/adma.201302777 article EN Advanced Materials 2013-08-21

A mid-infrared (mid-IR) sensor chip was demonstrated for volatile organic compound (VOC) detection. The consisted of As2Se3 optical waveguides built by microelectronic fabrication processes. VOC sensing performance characterized measuring acetone and ethanol vapors at their characteristic C–H absorption from λ = 3.40 to 3.50 μm. Continuous detection with <5 s response time achieved the intensity attenuation waveguide mode. miniaturized noninvasive can be applied breath analysis environmental...

10.1021/acs.analchem.8b03004 article EN Analytical Chemistry 2018-12-05

CMOS compatible mid-Infrared (mid-IR) microphotonics including (1) broadband SOUP (Silicon on Oxide Undercladding Pedestal) waveguides; and (2) mid-IR transparent chalcogenide glass (ChGs) waveguides monolithically integrated with a PbTe thin film photodetector; are demonstrated. Using pedestal undercladding geometry we obtain an optical loss for our Si waveguide which is 10 dB/cm lower compared to other using planar SiO2 cladding at λ = 5 µm, fundamental mode seen over broad spectral range....

10.1364/ome.3.001474 article EN cc-by Optical Materials Express 2013-08-26

Abstract Photonic integrated circuits require various optical materials with versatile properties and easy on‐chip device integration. To address such needs, a well‐designed nanoscale metal‐oxide metamaterial, that is, plasmonic Au nanoparticles embedded in nonlinear LiNbO 3 (LNO) matrix, is demonstrated tailorable response. Specifically, epitaxial single‐domain LNO thin films tailored nanoparticle morphologies (i.e., sizes densities), are grown by pulsed laser deposition method. The...

10.1002/adom.201800510 article EN Advanced Optical Materials 2018-07-09

A chip-scale mid-infrared (mid-IR) sensor was developed for hydrocarbon gas detection.

10.1039/c9ra10058j article EN cc-by-nc RSC Advances 2020-01-01

A spatially varying effective refractive index gradient using chalcogenide glass layers is printed on a silicon wafer an optimized electrospray (ES) deposition process. Using solution-derived precursors, IR-transparent Ge23Sb7S70 and As40S60 films of programmed thickness are fabricated to yield bilayer structure, resulting in (GRIN) film. Optical compositional analysis tools confirm the optical physical nature high-optical-quality films, demonstrating power direct printing multimaterial...

10.1021/acsami.7b06140 article EN ACS Applied Materials & Interfaces 2017-07-19

The ultraviolet stability of several high birefringence liquid crystal structures was studied. Compounds containing carbon-carbon double bond or triple are less stable than those merely phenyl rings. In addition to the structural effect, absorption wavelength also plays an important role degradation mechanisms.

10.1080/15421400490435233 article EN Molecular Crystals and Liquid Crystals 2004-01-01

10.1088/1464-4258/11/7/075005 article EN Journal of Optics A Pure and Applied Optics 2009-05-06

This paper studies the fabrication and characterization of solution-processed chalcogenide waveguides by a microtrench filling method. In this process, channels are etched on substrates backfilled with solution-dissolved arsenic sulfide before being annealed. The homogeneous in elemental composition have good mode confinement. Both simulation experimental measurements confirm dominant fundamental covering 2.5–2.8 μm. We measure an optical loss 1.87 dB/cm, which to our knowledge is lowest...

10.1021/ph400107s article EN ACS Photonics 2014-02-13

Broadband mid-infrared (mid-IR) photonic circuits that integrate silicon waveguides and epitaxial barium titanate (BTO) thin films are demonstrated using the complementary metal–oxide–semiconductor process. The BTO grown on lanthanum aluminate (LAO) substrates by pulsed laser deposition technique, wherein a broad infrared transmittance between λ = 2.5 7 μm is observed. optical waveguiding direction defined high-refractive-index amorphous Si (a-Si) ridge structure developed layer. Our show...

10.1021/acsami.7b02681 article EN ACS Applied Materials & Interfaces 2017-06-20

Abstract Integration of nanoscale photonic and plasmonic components on Si substrates is a critical step toward Si‐based integrated nanophotonic devices. In this work, set unique complex 3D metamaterials with intercalated nanolayered nanopillar structures tunable optical properties designed. More specifically, the combine metal (Au) nanopillars alternating metal‐nitride (Au‐TiN Au‐TaN) nanolayers, epitaxially grown substrates. The ultrafine Au ( d ≈ 3 nm) continuously grow throughout all...

10.1002/admi.202000493 article EN Advanced Materials Interfaces 2020-06-23

Nonlinear photonic crystal waveguide structures were fabricated from barium titanate thin films using nanolithography. A cascaded Bragg reflector a strip was designed and analyzed. Both simulation experimental results show that there is sufficient refractive index contrast to form stop band by only etching through the Si3N4 layer. The gap of can be engineered control spacing, thickness, depth transmission spectrum measured over spectral range 1500–1580nm. 27nm wide obtained for millimeter...

10.1063/1.2739083 article EN Applied Physics Letters 2007-05-14
Coming Soon ...