A5011031457- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Advanced Sensor and Energy Harvesting Materials
- Molecular Junctions and Nanostructures
- Semiconductor materials and devices
- Organic Light-Emitting Diodes Research
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Thin-Film Transistor Technologies
- Electrical and Thermal Properties of Materials
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Magneto-Optical Properties and Applications
- Fuel Cells and Related Materials
- Transition Metal Oxide Nanomaterials
- Photonic Crystals and Applications
- Nanomaterials and Printing Technologies
- Supramolecular Self-Assembly in Materials
- Analytical Chemistry and Sensors
- Ferroelectric and Negative Capacitance Devices
- Photonic and Optical Devices
- Quantum-Dot Cellular Automata
- Dielectric materials and actuators
University of North Dakota
2022
University of Missouri
2014-2020
The use of polymer ferroelectric dielectrics in organic field-effect transistors (FETs) for nonvolatile memory application was demonstrated more than 15 years ago. dielectric polyvinylidene fluoride (PVDF) and its copolymers are most widely used such applications. In addition to applications, ferroelectrics as a layer FETs yield insights into interfacial transport properties. Advantages their high constant compared other tunable with temperature. Further, the polarization strength may also...
Peptide-based nanostructures derived from natural amino acids are superior building blocks for biocompatible devices as they can be used in a bottom-up process without the need expensive lithography. A dense nanostructured network of l,l-diphenylalanine (FF) was synthesized using solid–vapor-phase technique. Formation and structure–phase relationship were investigated by electron microscopy Raman scattering. Thin films micro/nanostructures (FF-MNSs) dielectric layer pentacene-based...
A series of organometallic complexes and polymers has been synthesized with an objective studying their fundamental photophysical properties together organic photovoltaic field-effect transistor properties. The metal chromophores consist a diketopyrrolopyrrole (DPP) core, end functionalized cyclometalated platinum "auxochrome". the complex are compared unmetalated chromophore DPP-C8-Th-Py. Poly-DPP-Th-Pt Poly-DPP-Ph-Pt differ structurally in cyclometallating ligands, where they...
Ferroelectric dielectrics, permitting access to nearly an order of magnitude range dielectric constants with temperature as the tuning parameter, offer a great platform monitor changes in interfacial transport organic field-effect transistors (OFETs) polarization strength is tuned. Temperature-dependent studies have been carried out from pentacene-based OFETs using ferroelectric copolymer poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) gate insulating layer. The thickness was...
Controlling polarization in ferroelectric oxides has enabled fast switching and low-power operation metal-oxide-semiconductor field-effect transistors (MOSFETs). Parallel studies on the performance of ferroelectric-polymer-based organic FETs (OFETs), where direction is rotated by 90\ifmmode^\circ\else\textdegree\fi{}, are lacking. This article examines effects external electrical poling small-molecule OFETs. The overall transistor properties enhanced when layer vertically poled, easily...
Despite much study of the general mechanism transport in organic transistors, their...
Abstract Polymer ferroelectrics are playing an increasingly active role in flexible memory application and wearable electronics. The relaxor ferroelectric dielectric, poly(vinylidene fluoride trifluorethylene (PVDF‐TrFE), although vastly used organic field‐effect transistors (FETs), has issues with gate leakage current especially when the film thickness is below 500 nm. This work demonstrates a novel method of selective poling dielectric layer. By using solution‐processed...
It has been shown that the use of a ferroelectric dielectric in 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) field-effect transistors (FETs) results negative coefficient carrier mobility, signature band-like transport, above certain temperature [A. Laudari and S. Guha, Phys. Rev. Appl. 6, 044007 (2016)]. Along with spontaneous polarization, polymer dielectrics offer platform for tuning interfacial transport FETs as their constant may vary nearly by an order magnitude...
Inkjet and other forms of printing are now popular deposition techniques for the various layers in organic electronic devices, which crucial development large-scale, low-cost, flexible electronics. Along with ease deposition, inkjet provides better control semiconductor–dielectric interface field-effect transistors (FETs) metal–insulator–semiconductor (MIS) diodes, compared to techniques. We compare electrical characteristics inkjet-printed spincoated poly-4-vinyl phenol (PVP) dielectric...
Copolymers based on diketopyrrolopyrrole (DPP) cores have attracted a lot of attention because their high p-type as well n-type carrier mobilities in organic field-effect transistors (FETs) and power conversion efficiencies solar cell structures. We report the structural charge transport properties n-dialkyl side-chain-substituted thiophene DPP end-capped with phenyl group (Ph-TDPP-Ph) monomer FETs which were fabricated by vacuum deposition solvent coating. Grazing-incidence X-ray...
The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and copolymers are a perfect test-bed conducting studies where systematic tuning the dielectric constant with temperature may be achieved. charge mechanism an organic semiconductor often occurs at intersection band-like...
We performed x-ray photoelectron spectroscopy measurements on a thin film of Si nanocrystals (SiNCs) while applying DC or AC external biases to extract the resistance and capacitance film. The measurement consists application 10 V square wave pulses amplitude sample at various frequencies ranging from 0.01 1 MHz recording photoemission data. To analyze data, we propose three different models with varying degrees accuracy. calculated SiNCs agrees experimental value in literature.