A5064297158- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- 2D Materials and Applications
- Electronic and Structural Properties of Oxides
- ZnO doping and properties
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Thermal properties of materials
- Perovskite Materials and Applications
- Film in Education and Therapy
- Quantum Dots Synthesis And Properties
- Acoustic Wave Resonator Technologies
- Silicon Carbide Semiconductor Technologies
- Interactive and Immersive Displays
- Nanomaterials and Printing Technologies
- Cinema and Media Studies
- Chalcogenide Semiconductor Thin Films
- Semiconductor Quantum Structures and Devices
- Ferroelectric and Piezoelectric Materials
- Advanced Sensor and Energy Harvesting Materials
Applied Research Laboratory at the University of Hawai‘i
2021-2022
Pennsylvania State University
2018-2021
Applied Research Laboratory at Penn State
2019-2020
Park University
2020
Freeport-McMoRan (United States)
2018
β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (EG ∼ 4.8 eV), which promises generational improvements in the performance and manufacturing cost over today's commercial wide power electronics based on GaN SiC. However, overheating has been identified as a major bottleneck to commercialization of Ga2O3 device technologies. In this work, novel Ga2O3/4H-SiC composite wafer with high heat transfer epi-ready surface finish developed using fusion-bonding...
Heteroepitaxy of β-phase gallium oxide (β-Ga2O3) thin films on foreign substrates shows promise for the development next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, influences film thickness crystallinity thermal conductivity (2̅01)-oriented β-Ga2O3 heteroepitaxial were investigated. Unintentionally doped grown c-plane sapphire with off-axis angles 0° 6° toward ⟨112̅0⟩ via metal–organic vapor phase epitaxy (MOVPE) low-pressure chemical...
Abstract We report polycrystalline diamond epitaxial growth on β -Ga 2 O 3 for device-level thermal management. focused establishing conditions accompanying the study of various nucleation strategies. A window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration , a conductivity 110 ± 33 W m −1 K and diamond/ boundary resistance 30.2 1.8 G were measured. The film stress managed by optimization techniques preventing delamination...
We report the successful growth of high-quality GaAs1–xSbx nanowires on monolayer graphene/SiO2/p-Si (111) using molecular beam epitaxy (MBE) for application a flexible near-infrared photodetector. A systematic and detailed study NW parameters, namely, temperature, V/III equivalent pressure (BEP) ratio, Ga shutter opening duration, has been carried out. Growth vertical ⟨111⟩ oriented graphene with 4 K photoluminescence emission in range 1.24–1.38 eV achieved. The presence weak D mode Raman...
This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and p-type doping was achieved by adjusting thickness pGaN. device structure enabled scaling breakdown voltage to over 3 kV, dynamic switching up 2.8 kV without using any field-plate.
We report the growth of vertical, high-quality GaAs0.9Sb0.1 nanowires (NWs) with improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si(111) by self-catalyzed molecular beam epitaxy. An O2 plasma treatment graphene under mild conditions enabled modification surface functionalization and reactivity to semiconductor adatoms. The rise in disorder peak Raman mode, decreased conductivity, creation additional groups compared that pristine confirmed graphene. To enhance...
AlN thin films are enabling significant progress in modern optoelectronics, power electronics, and microelectromechanical systems. The various growth methods conditions lead to different film microstructures. In this report, phonon scattering mechanisms that impact the cross-plane (κz; along c-axis) in-plane (κr; parallel c-plane) thermal conductivities of prepared by synthesis techniques investigated. contrast bulk single crystal with an isotropic conductivity ∼330 W/m K, a strong...
Atomic layer deposition (ALD) processes were demonstrated for lead-titanate (PbTiO3) and lead-zirconium-titanate (PZT) films. The metal organic precursors tetraethyl lead Pb(Et)4 reacted with ozone; along tetrakis ethylmethylamino zirconium dimethylamino titanium either water or ozone. These selected based on compatibility ALD the component oxides. Single oxide films of PbO, ZrO2, TiO2 easily deposited using precursors. complex was done by combining compositions Pb, Zr, Ti in could be...