Ziqian Tian

ORCID: 0000-0002-5535-9403
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Research Areas
  • Phase Change Materials Research
  • Solar Thermal and Photovoltaic Systems
  • Solar-Powered Water Purification Methods
  • Solar Energy Systems and Technologies
  • Adsorption and Cooling Systems
  • Advanced Battery Materials and Technologies
  • Copper Interconnects and Reliability
  • Radiative Heat Transfer Studies
  • Aluminum Alloys Composites Properties
  • Silicon Carbide Semiconductor Technologies
  • Material Dynamics and Properties
  • Thermal properties of materials
  • Thin-Film Transistor Technologies
  • Transition Metal Oxide Nanomaterials
  • Polymer crystallization and properties

North China Electric Power University
2020-2023

Abstract A minority carrier lifetime of 25.46 μs in a P-type 4H-SiC epilayer has been attained through sequential thermal oxidation and hydrogen annealing. Thermal can enhance the by reducing carbon vacancies. However, this process also generates clusters with limited diffusivity contributes to enlargement surface pits on 4H-SiC. High-temperature annealing effectively reduces stacking fault dislocation density. Moreover, electron spin resonance analysis indicates significant reduction...

10.1088/1674-1056/adc407 article EN Chinese Physics B 2025-03-24

The fabrication of form-stable phase change materials (FS-PCMs) usually involves four manufacturing processes: mixing, immersion, stabilization, and sintering. In each process, the operation parameters could affect performance fabricated PCM composite. To gain an efficient low-cost method for large-scale production molten salts/expanded graphite (EG) composite FS-PCMs, effects different operating were investigated, including stirring speed, evaporation temperature, melt-impregnation,...

10.3390/ma13235368 article EN Materials 2020-11-26

A minority carrier lifetime of 25.46 $\mu$s in a P-type 4H-SiC epilayer has been attained through sequential thermal oxidation and hydrogen annealing. Thermal can enhance the by reducing carbon vacancies. However, this process also generates clusters with limited diffusivity contributes to enlargement surface pits on 4H-SiC. High-temperature annealing effectively reduces stacking fault dislocation density. Moreover, electron spin resonance analysis indicates significant reduction vacancy...

10.48550/arxiv.2411.10777 preprint EN arXiv (Cornell University) 2024-11-16

The research on latent heat storage technology is beneficial for the large-scale popularization and application of energy technology. In order to solve difficulties in thermal (LTES) technology, numerical studies solid–liquid phase-change process LTES units using enthalpy-porosity method have become hotspots. Among them, importance studying mushy-zone parameter has been neglected. this paper, a two-dimensional model created based investigate effects different parameters within wide range...

10.1063/5.0152166 article EN Journal of Renewable and Sustainable Energy 2023-05-01
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