Yu Liang

ORCID: 0000-0002-5636-9013
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About
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Research Areas
  • Solar and Space Plasma Dynamics
  • Stellar, planetary, and galactic studies
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • 2D Materials and Applications
  • ZnO doping and properties
  • Ga2O3 and related materials
  • Graphene research and applications
  • Advanced Photocatalysis Techniques
  • Electronic and Structural Properties of Oxides
  • Surface and Thin Film Phenomena
  • Organic Light-Emitting Diodes Research
  • Copper-based nanomaterials and applications
  • Conducting polymers and applications
  • Advanced Drug Delivery Systems
  • Astro and Planetary Science
  • Engineering and Technology Innovations
  • Spectroscopy and Quantum Chemical Studies
  • Dielectric materials and actuators
  • Laser-Matter Interactions and Applications
  • Flame retardant materials and properties
  • Magnetic properties of thin films
  • Electromagnetic Compatibility and Measurements
  • Spectroscopy Techniques in Biomedical and Chemical Research
  • Control and Dynamics of Mobile Robots

Dalian Institute of Chemical Physics
2019-2023

Chinese Academy of Sciences
2001-2023

University of Chinese Academy of Sciences
2007-2023

Yunnan Observatories
2017-2022

Shanghai Astronomical Observatory
2022

Nanjing Tech University
2019-2021

Southern University of Science and Technology
2019-2021

University of Science and Technology of China
2021

Beijing Graphene Institute
2020-2021

Shanghai Institute of Ceramics
2021

Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have emerged as attractive platforms in next-generation nanoelectronics and optoelectronics for reducing device sizes down to a 10 nm scale. To achieve this, the controlled synthesis of wafer-scale single-crystal TMDs with high crystallinity has been continuous pursuit. However, previous efforts epitaxially grow TMD films on insulating substrates (e.g., mica sapphire) failed eliminate evolution antiparallel domains...

10.1021/acsnano.0c01478 article EN ACS Nano 2020-04-08

A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p–n junction optoelectronic device, in hope combining the beauties both devices together. Upon uncovered back-channel surface amorphous indium–gallium–zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnOx/IGZO heterojunction structure, through which formation and directional carrier transfer photogenerated carriers were experimentally...

10.1021/acsami.7b16498 article EN ACS Applied Materials & Interfaces 2018-02-14

Abstract The rich and complex arrangements of metal atoms in high‐index facets afford appealing physical chemical properties, which attracts extensive research interest material science for the applications catalysis surface chemistry. However, it is still a challenge to prepare large‐area single crystals controllable cost‐efficient manner. Herein, entire commercially available decimeter‐sized polycrystalline Cu foils are successfully transformed into with series facets, relying on...

10.1002/adma.202002034 article EN Advanced Materials 2020-06-11

The epitaxial growth of single-crystal thin films relies on the availability a substrate and strong interaction between epilayer substrate. Previous studies have reported roles (e.g., symmetry lattice constant) in determining orientations chemical vapor deposition (CVD)-grown graphene, Cu(111) is considered as most promising for graphene single crystals. However, gas-phase reactants graphene-substrate orientation are still unclear. Here, we find that trace amounts oxygen capable enhancing...

10.1021/acsnano.1c06285 article EN ACS Nano 2021-12-29

Recent demonstrations of electrical detection and manipulation antiferromagnets (AFMs) have opened new opportunities towards robust ultrafast spintronics devices. However, it is difficult to establish the connection between spin-transport behavior microscopic AFM domain states due lack real-time imaging technique under electric field. Here we report a significant Voigt rotation up 60 mdeg in thin NiO(001) films at room temperature. Such large allows us directly observe domains thin-film NiO...

10.1103/physrevb.100.134413 article EN Physical review. B./Physical review. B 2019-10-10

In the present work, a wireless microfluidic sensor based on low-temperature cofired ceramic (LTCC) technology for real-time detection of metal ions in water is proposed. The composed planar spiral inductor and parallel plate capacitor (LC) resonant antenna, which integrates with microchannel LTCC substrate between plates. Aqueous solutions Pb(NO3)2, Cd(NO3)2, Mg(NO3)2, Ca(NO3)2, NaNO3, KNO3 concentrations 0–100 mM were tested sensors. ion its concentration can be by amplitude reflection...

10.1021/acsomega.1c00941 article EN cc-by-nc-nd ACS Omega 2021-03-25

Abstract We present an investigation of a coronal cavity observed above the western limb in red line Fe x 6374 Å using telescope Peking University and green xiv 5303 Yunnan Observatories, Chinese Academy Sciences, during total solar eclipse on 2017 August 21. A series magnetic field models is constructed based magnetograms taken by Helioseismic Magnetic Imager board Solar Dynamics Observatory ( SDO ) one week before eclipse. The model lines are then compared with structures seen images...

10.3847/1538-4357/aaaf68 article EN The Astrophysical Journal 2018-03-20

Modulation using a rotating waveplate is the most popular way in astronomy to obtain radiation polarization states and thus physical condition of celestial bodies. error analysis quarter-waveplate polarimeter presented this paper. In terms geometric dimensions, three modulation sources are analyzed: axial error, rotation axis tip-tilt (zenithal error), position fast (azimuthal error). The dispersion deviation, as another dimension modulator also studied theory, two factors affect accuracy...

10.1364/ao.58.009883 article EN Applied Optics 2019-12-10

A novel strategy to achieve high performance thin-film transistors based on carrier concentration-graded InGaZnO channels using Al<sub>2</sub>O<sub>3</sub>-passivated HfO<sub>2</sub> as a dielectric layer was established.

10.1039/c6tc04709b article EN Journal of Materials Chemistry C 2016-12-30

Carrier dynamics in the space charge layer (SCL) is an important topic semiconductor science, especially for promising two-dimensional materials used next-generation electronic and optoelectronic devices. Investigating these on both spatial ultrafast time scales crucial to promote their widespread application. Here, we systematically study carrier of MoS2 flakes using femtosecond time-resolved spectroscopic photoemission electron microscopy. By acquiring a series microarea photoelectron...

10.1021/acs.jpcc.3c00055 article EN The Journal of Physical Chemistry C 2023-04-06

Concerning the revolutionary future of electronic devices, high‐performance solution‐processable semiconductors have earned increasing academic and industrial research interests. In this paper, we synthesize In‐Ga‐Cd‐O semiconductor thin films via a solution method. Transparent amorphous/nanocrystalline oxide with small surface roughness been grown by controlling relative ratio Cd‐content. The present thin‐film transistor an optimized Cd‐ratio exhibits saturation field‐effect mobility up to...

10.1002/pssr.201800034 article EN physica status solidi (RRL) - Rapid Research Letters 2018-03-08

ABSTRACT Strict registration is critical for imaging polarimetry; a highly accurate approach to the coronal image and polarimetry of Fe 6374 Å red line have been researched in this paper. In order improve accuracy, paper proposes idea enhancement based on blind deconvolution combined with noise-adaptive fuzzy equalization algorithms. After enhancement, cross-correlation algorithm achieves better results. To diagnose low-temperature corona, polarization brightness data Mauna Loa Solar...

10.1093/mnras/stab463 article EN Monthly Notices of the Royal Astronomical Society 2021-02-17

Ga–Cd–O (GCO) thin films with different Ga contents were fabricated based on a solution-processed method. The direct optical bandgap of GCO is changed from 2.89 to 4.53 eV the Ga-content 30% 100% and their relationship agrees well second-order equation. Raman spectra are dominated by three main features: relatively sharp peak at ~260 cm−1 two broad features ~405 949 cm−1, variations analyzed associated phonon mode assignment. Moreover, thin-film transistors using channels all exhibit n-type...

10.1088/1361-6463/aad26b article EN Journal of Physics D Applied Physics 2018-07-10

The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us understand carrier dynamics in heterojunctions with both high spatial temporal resolutions. Recently, we have successfully set a time-resolved photoemission electron microscopy (TR-PEEM), which integrates the spectroscopic technique measure densities at specific energy levels space. instrument provides an unprecedented access evolution of electrons terms location, time resolution,...

10.1063/1674-0068/cjcp1903044 article EN Chinese Journal of Chemical Physics 2019-06-28

ABSTRACT We carried out the polarimetric observation of white-light inner corona during 2017 total solar eclipse in United States. Degree linear polarization (DLP) is obtained by modulated polarized data. The electron density inferred from normalized brightness According to observational results, we find that: (1) DLP increases with height, peaking at approximately $1.3 \sim 1.35\, {\rm R}_{\odot }$ and then slightly decreases. In coronal streamer region, peaks 1.35 R⊙ its value about 40 per...

10.1093/mnras/stac3183 article EN cc-by Monthly Notices of the Royal Astronomical Society 2022-11-03

In some applications of broadband ultrafast spectroscopy, such as surface sum frequency generation vibrational femtosecond stimulated Raman spectroscopy (SRS), and coherent anti-Stokes a narrowband picosecond pulse is required to obtain high spectral resolution. Here, we present method generate second harmonic (SH) fundamental (FF) pulses with high-conversion efficiency from Ti:sapphire laser amplifier. The SH was generated based on the group velocity mismatch between FF in nonlinear crystal...

10.1063/5.0056050 article EN Review of Scientific Instruments 2021-08-01
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