A5070634202- Advanced Condensed Matter Physics
- Magnetic and transport properties of perovskites and related materials
- Multiferroics and related materials
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Neuroscience and Neural Engineering
- Physics of Superconductivity and Magnetism
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Ferroelectric and Piezoelectric Materials
- Crystal Structures and Properties
- Magnetic Properties and Applications
- Magnetism in coordination complexes
- Advanced Battery Materials and Technologies
- High-pressure geophysics and materials
- Advancements in Battery Materials
- Semiconductor materials and devices
- Dielectric properties of ceramics
- Advanced Battery Technologies Research
- Advanced NMR Techniques and Applications
- Photoreceptor and optogenetics research
- Conducting polymers and applications
- Magnetic Properties and Synthesis of Ferrites
- Quantum and electron transport phenomena
Huazhong University of Science and Technology
2017-2023
Wuhan National Laboratory for Optoelectronics
2020-2023
Single crystal Na2Co2TeO6 has been successfully grown by self-flux method, and its lattice structure basic magnetic properties were characterized. As determined single X-ray diffraction, belongs to space group P6322 (182) with a = b 5.2709(2) Å, c 11.2615(15) V 270.95 (4) Å3, the is layered honeycomb formed CoO6 octahedra TeO6 in center of layers, NaO6 are between layers. Magnetic susceptibility measurements indicate that sample displays distinct anisotropic behavior spin parallels plane...
Abstract The rise of emerging technologies such as Big Data, the Internet Things, and artificial intelligence, which requires efficient power schemes, is driving brainstorming in data computing storage technologies. In this study, merely relying on fundamental structure two memristors a resistor, arbitrary Boolean logic can be reconfigured calculated steps, while no additional voltage sources are needed beyond “± V P ” 0, all state reversals based memristor set switching. Utilizing proposed...
Magnetic transitions in a single crystal of the orthoferrite ${\mathrm{ErFeO}}_{3}$ have been studied between 2 and 300 K using conventional superconducting quantum interference device measurements as well pulsed high magnetic fields up to 58 T. Spontaneous spin reorientations, temperature field induced observed. At spin-reorientation transition temperatures, ${\mathrm{Fe}}^{3+}$ sublattice exhibits...
In this study, an optimized XOR logic gate is briefly proposed based on memristors. The exhibits a simple structure that comprises two memristors; it requires merely steps to complete logic. inputs of the are applied by voltage and memristive resistance, output stored as resistance value cell. Furthermore, encryption decryption such circuit have been verified performing parallel electrical test successfully. At same time, scheme cascaded serial compared in detail. Moreover, mentioned...
We investigated the magnetic characteristics of Na2Co2TeO6at different temperatures and field. The experimental results indicated that field can disturb antiferromagnetic interaction lead to disorder. Magnetization curves measured with anglesθ(θis between direction andcaxis) express magnetocrystalline anisotropy in this system. When angleθ= 0 (magnetic parallel tocaxis), two continuous phase transitions at critical temperatureTN1andTN3were observed. Asθchanges,TN1is almost independent onθ,...
In this Letter, a Ti/HfOx/Pt memristor with modified Ti electrode created by inserting polydopamine (PDA)/Ag nanoparticles (AgNPs) between the and functional layer is reported. This exhibits significant improvement in uniformity of device parameters [including set voltage, reset high resistance state (HRS) resistances, low (LRS) endurance, retention] compared to conventional memristors. The AgNPs embedded PDA renders reduced variability HRS LRS resistances from 47% 7%, 46% 11%, respectively....
BiFeO3, a typical multiferroic compound, owns complicated interactions among its charge, lattice, and spin degrees, while largely remaining mystery. In this work, the BiFeO3 single crystal has been investigated in pulsed high magnetic fields up to 50 T. The spin, charge orderings are found couple with each other strongly. High field could drive cycloid phase canted antiferromagnetic accompanied by clear magnetostriction response weakening of ferroelectric polarization. critical for...
A new selenite-sulfate compound Co3(SeO3)(SO4)(OH)2 was prepared using a typical hydrothermal reaction. This is found to crystallize in an orthorhombic space group of Pnma, featuring 2D distorted kagomé structure composed linear and zigzag Co-chains, which the magnetic ions construct different isosceles-triangles. Our results specific heat measurements confirm canted antiferromagnetic order at TN ∼ 29 K. Further, successive field-induced metamagnetic transitions can be observed Hc1 1 T, Hc2...
The magnetic properties and dielectric polarization of CuFe1−x Ga x O2 with various nonmagnetic Ga3+ doping levels have been measured in a wide field region, which the observed experiment results explained by consequence change exchange interaction, dilution effect, partial reduction spin frustration. Compared pure CuFeO2, doped ions an important effect on magnetization behavior lead to enhanced magnetoelectric coupling, especially, spontaneous has amount 0.02 0.05. This appears mainly...
Abstract The magnetic properties of the candidate lithium-ion battery cathode materials Li 2 MnSiO 4 have been studied experimentally using static and pulsed high fields. A field-induced transition is observed in low temperature region, which a saturation magnetization above 27 T confirms that Mn-ion has dominant spin state with saturated moment ∼3.1 μ B /Mn. With change field, shows complex phase transition. Considering to coupling between spin, charge orbital, may affect charge-discharge...
The spin-orbital-lattice coupling in spinel ${\mathrm{MnV}}_{2}{\mathrm{O}}_{4}$ single crystal has been investigated by static field magnetization (field sweep rate of 50 Oe/s), pulsed $\ensuremath{\sim}{10}^{5}$ kOe/s), dielectric permittivity, and magnetostriction. Experimental results show that the magnetostriction are related to rate. analysis magnetization, permittivity magnetic shows collinear (CL) non-CL (NCL) spin configurations coexist between ${T}_{N}\ensuremath{\sim}56$ K...
We have successfully synthesized a new transition metal tellurate compound K2Cu2(Te2O5)(TeO3)2·2H2O. The crystallizes in the monoclinic crystal system with space group P21/c; Te coordination polyhedra polymerizes to form [Te2O5]∞ ladders running along [100]. are connected [001] direction [Cu2O8] spin-dimer units via common oxygen covalently bonded [Cu2Te2O5]∞. Magnetization measurements confirmed that K2Cu2(Te2O5)(TeO3)2·2H2O has properties. broad maximum around Tmax = 50 K indicates...
A novel transition metal tellurate single-crystal BaNi2TeO6 with layered honeycomb lattices has been successfully synthesized. The crystal structure of reveals that there are the Ni2+ lattice layers and Te6+ triangle in ab plane. shows an antiferromagnetic (AFM) at ∼25 K, which is almost same temperature as Curie-Weiss θ ∼ -27 indicating presence AFM interactions without obvious magnetic frustration system. However, field-induced successive transitions observed Hc1 16.2 T Hc2 42.2 show...
The honeycomb single-crystal compound Na2Ni2TeO6 has been synthesized successfully, and its magnetization behavior under a pulsed high magnetic field investigated. At TN ∼ 27 K, undergoes paramagnetic (PM) to antiferromagnetic (AFM) phase transition with both the parallel c-axis (B∥c) perpendicular (B⊥c). For B∥c T = 2 field-induced spin-reorientation is observed at B∥c1 10.95 reached canted AFM phase; as increases B∥c2 49.5 T, spin almost completely polarized PM state reached. B⊥c 4.2 was...
Negative differential resistance (NDR) effect has its research significance and application value. However, the evolution of NDR under magnetic fields (especially ultrahigh fields) is rarely reported unclear. Herein, electrical transport properties Ge‐based devices Ag/p‐Ge:Ga/Ag are investigated. In these devices, behavior observed from 77 to 300 K, which mainly related minority injection effect. Under static field conditions, effectively enhanced presented with geometrical‐related...
Magnetoelectric (ME) coupling is highly desirable for sensors and memory devices. Herein, the polarization (P) magnetization (M) of DyFeO3 single crystal were measured in pulsed magnetic fields, which ME behavior modulated by multi-magnetic order parameters has high magnetic-field sensitivity. Below ordering temperature Dy3+-sublattice, when field along c-axis, P (corresponding to a large critical 3 T) generated due exchange striction mechanism. Interestingly, ab-plane, with smaller fields...
The in-plane magnetoresistance and magnetostriction of ${\mathrm{Ca}}_{3}{\mathrm{Ru}}_{2}{\mathrm{O}}_{7}$ single crystals were investigated under pulsed magnetic field. Field-induced resistance steps structural change observed for specific field directions far below the metal-to-insulator transition temperature ${T}_{\mathrm{MI}}=48$ K, which not static Especially, only in field-descending branch, indicating relaxation properties, no magnetization observed. These results unveil existence...
Logic-in-memory (LIM) computing based on memristors is considered as a promising non von Neumann paradigm. In this letter, scheme to combine resistance-resistance (R–R) and voltage-resistance (V–R) logic gates implement V/R-R sequential primitives composed of three one load resistor demonstrated with TiN/Ti/$\mathrm{HfO}_{\mathrm{x}}$/TiN crossbar array. Arbitrary Boolean can be calculated within cycle. The input signal completely preserved nondestructive during calculation. diversity made...
Instead of the von Neumann architecture, logic-in-memory (LIM) provides a revolutionary approach to promoting computing efficiency. Based on earlier work complete LIM 16 Boolean logics, this article describes memristor-based multiplexer (MUX) efficiently realized using voltage/resistor-input-resistor-output (V/R-R) logic method, despite fact that MUX is one complicated logics in design VLSI circuits. Following that, unique 2–1 further created by merging destructive...