A5051594717- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- Force Microscopy Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Near-Field Optical Microscopy
- Photonic and Optical Devices
- Chalcogenide Semiconductor Thin Films
- Advanced Surface Polishing Techniques
- Optical Coatings and Gratings
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- Conducting polymers and applications
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- TiO2 Photocatalysis and Solar Cells
- bioluminescence and chemiluminescence research
- Solid-state spectroscopy and crystallography
Institut Photovoltaïque d’Île-de-France
2022-2024
Institut de France
2022-2024
Laboratoire de Génie Électrique et Électronique de Paris
2015-2022
Université Paris-Sud
2018-2019
Centre National de la Recherche Scientifique
2018-2019
Sorbonne Université
2018-2019
Université Paris-Saclay
2018-2019
CentraleSupélec
2018-2019
Perovskite‐based solar cells have been extensively studied by the scientific community over past decade and they are currently a very promising technology to be integrated into tandem perovskite module, for example, associated with silicon cells. However, one of challenges lies in upscaling production from small laboratory‐scale (<1 cm 2 ) larger modules. In this context, there is considerable interest extending analysis previously conducted on micrometer or millimeter scale scale. work,...
Perovskite photovoltaics (PVs) is an emerging PV technology that attracts interest thanks to unprecedented combination of properties, including the ease bandgap tunability. The feasibility deploy wide absorbers (>2.2 eV) leading high average visible transmittance (AVT) particularly intriguing for building‐integrated PVs, in particular smart windows, façades, and agrivoltaics. However, research on this topic still at initial stage, especially concerning development scalable deposition...
<title>Abstract</title> Inverted perovskite solar cells face performance limitations due to non-radiative recombination at the surfaces in devices, including functional layers. Advanced characterization and density theory reveal that phosphonic acids passivate surface defects, while piperazinium chloride mitigates interface by improving energy level alignment, introducing a field effect, homogenizing surface. Together, quasi-Fermi splitting of is homogeneously increased ca. 100mV. This...
Low-temperature plasma enhanced atomic layer deposition (PE-ALD) was successfully used to grow silicon (Si) doped amorphous and microcrystalline gallium phosphide (GaP) layers onto p-type Si wafers for the fabrication of n-GaP/p-Si heterojunction solar cells. PE-ALD realized at 380 °C with continuous H2 discharge alternate use phosphine trimethylgallium as sources P Ga atoms, respectively. The were thanks silane (SiH4) diluted in that introduced a separated step. High SiH4 dilution (0.1%)...
While perovskite (PVK)‐based solar cells exhibit excellent efficiencies and require a relatively simple synthesis process, stability issues during operation severely limit their commercial development. Therefore, degradation studies have drawn much attention, but the plethoric literature highlights complexity of topic. Thus far, in most studies, pre‐ postmortem analyses are performed system's performances before after aging compared, limiting understanding pathways. By contrast, situ...
Coupled optical/electrical simulations have been performed on solar cells consisting in arrays of p-i-n radial nanowires based crystalline p-type silicon (c-Si) core/hydrogenated amorphous (a-Si:H) shell heterojunctions. Three-dimensional (3D) optical calculations rigorous coupled wave analysis (RCWA) are firstly and then to a semiconductor device simulator that exploits the symmetry nanowires. By varying either doping concentration c-Si core, or work function Al-doped ZnO (AZO) back contact...
By coupling optical and electrical modeling, we have investigated the photovoltaic performances of p-i-n radial nanowires array based on crystalline p-type silicon (c-Si) core/hydrogenated amorphous (a-Si:H) shell. varying either doping concentration c-Si core, or back contact work function can separate highlight contribution to cell's performance themselves (the cell) from interspace between planar cell). We show that build-in potential (V bi) in cells strongly depends core respectively....
A set of (p) a‐Si:H/(i) a‐Si:H/(n) c‐Si heterostructures is investigated by coplanar conductance measurements. The thickness the (i) a‐Si:H buffer layer varied between 2 and 50 nm, well beyond values used in heterojunction solar cells. change this plays a role on band bending at heterointerface therefore impacts level inversion carrier population surface. Measurements are compared with 1D analytical calculations 2D electrical modeling. It demonstrated that deep defect density, related to...