A5031316413- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- GaN-based semiconductor devices and materials
- Integrated Circuits and Semiconductor Failure Analysis
- Quantum Dots Synthesis And Properties
- Diamond and Carbon-based Materials Research
- ZnO doping and properties
- Optical Network Technologies
- Ion-surface interactions and analysis
- Semiconductor Lasers and Optical Devices
- solar cell performance optimization
- Photonic and Optical Devices
- Transition Metal Oxide Nanomaterials
- Non-Invasive Vital Sign Monitoring
- Gas Sensing Nanomaterials and Sensors
- Advanced Data Processing Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Synthesis and properties of polymers
- Advanced Semiconductor Detectors and Materials
- Engineering Technology and Methodologies
Saint Petersburg Academic University
2017-2024
Lomonosov Moscow State University
2024
Saint Petersburg State Electrotechnical University
2021-2023
St Petersburg University
2020-2021
Kuban State Technological University
2020
Moscow Power Engineering Institute
2018
RSPC MT
2017
National Research Tomsk State University
2014-2016
Tomsk Polytechnic University
2014-2016
University of Kassel
2006
Large‐scale solution printing perovskite photovoltaics is one of the key technological advantages in comparison to manufacturing wafer‐based solar cells (Si, GaAs, etc.). Herein, all‐slot‐die‐coated (PSCs) p–i–n (inverse) configuration with a process fully performed out glove box ambient conditions are demonstrated. The successful implementation approach demonstrated for devices based on MAPbI 3 and CsFAPbI absorbers four slot‐die‐coated layers—NiO x /perovskite/PCBM/BCP. Noticeably, use...
The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic optical properties GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study NWs growth on bare substrate, silicon nitride interlayer, predeposited AlN GaO x layers, monolayer thick Ga wetting seeding prepared by droplet performed. It demonstrated that homogeneity morphology NW arrays drastically depend chosen technique. An effect layers...
An approach for epitaxial growth of GaP layers on Si substrates at low temperature (380 °C) by plasma-enhanced atomic layer deposition (PEALD) is explored. A significant improvement the crystalline properties obtained using additional in-situ Ar plasma treatment. The first 20–30 nm demonstrated from transmission electron microscopy. Moreover, use treatment during PEALD process allows one to increase rate per cycle 0.9 ± 0.1 Å/cycle 1.9 and reduce RMS roughness 3.76 1.88 nm. effect electronic...
Amorphous and microcrystalline GaP films were deposited on Si substrates by time modulated plasma enhanced deposition from trimethylgallium phosphine using constant hydrogen at a temperature of 250–380 °C. obtained low radio-frequency (RF) power (20 W) mode exhibit the broad feature 350–360 cm−1 shoulder 370–390 in Raman spectra. have smooth surface with root-mean-square (RMS) roughness decreasing 0.9 to 0.2 nm increasing 250 380 Small amounts 3–5 nanocrystal inclusions amorphous matrix are...
Low-temperature plasma enhanced atomic layer deposition (PE-ALD) was successfully used to grow silicon (Si) doped amorphous and microcrystalline gallium phosphide (GaP) layers onto p-type Si wafers for the fabrication of n-GaP/p-Si heterojunction solar cells. PE-ALD realized at 380 °C with continuous H2 discharge alternate use phosphine trimethylgallium as sources P Ga atoms, respectively. The were thanks silane (SiH4) diluted in that introduced a separated step. High SiH4 dilution (0.1%)...
A method to obtain vertically aligned silicon structures with a high aspect ratio, which are interesting for photovoltaics, using nanosphere lithography and cryogenic plasma etching is explored. For the conventional lithography, of latex spheres during process limits maximum ratio Si wire length diameter at level 5:1. The 2–3 μm can be obtained wires 0.45 diameter. An intermediate step SiO 2 hard mask formation before proposed increase length. predeposited layer allows length/diameter least...
The influence of Ar gas additives on ≪black silicon≫ formation is shown in this work. way to achieve the conical shape Si texture using low dilution demonstrated. Also, a possibility silicon nanowire width reduction keeping high density array shown. No damage structure caused by plasma was detected. introduction into also does not affect electrical properties. lifetime value after cryogenic etching with 5 sccm flow remains at same level 0.7 ms. resulting black has total reflectance 1 ± 0.5%...
We propose and demonstrate both flexible stretchable blue light-emitting diodes based on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane membranes with strain-insensitive transparent electrodes involving single-walled carbon nanotubes. core-shell were grown by metal-organic vapor phase epitaxy, encapsulated into a film, then released from the growth substrate. The fabricated free-standing membrane of contacts nanotube films can stand up to 20% stretching while...
The influence of hydrogen plasma treatment on the electrical and optical properties vertical GaN nanowire (NW)/Si heterostructures synthesized via assisted molecular beam epitaxy is studied. effect thoroughly studied variation passivation duration. Photoluminescence investigation demonstrates that affects doping NWs. samples were processed as photodiodes with a top transparent electrode to obtain detailed information about n-GaN NWs/p-Si heterointerface under illumination. electron induced...
The development of nanophotonics systems for the manipulation luminescent properties single quantum emitters is essential communication and computing. Dielectric nanosystems enable various opportunities light control through inherent electric magnetic resonances; however, their full potential has not yet been discovered. Here, emission nitrogen-vacancy (NV) centers in nanodiamonds placed near-field zone silicon nanoresonators are investigated. It demonstrated experimentally that spontaneous...
The properties of n‐GaP/p‐Si interface as well their influence on solar cell performance are studied for GaP layers grown by low‐temperature (380 °C) plasma‐enhanced atomic layer deposition (PE‐ALD). different plasma treatments and RF power values explored. increase leads to a growth transition from amorphous (a‐GaP) microcrystalline (μc‐GaP) with either amorphous‐GaP/Si or epitaxial‐GaP/Si interface, respectively. However, when continuous hydrogen is used the exhibits better photovoltaic...
A plasma technology approach to grow microcrystalline GaP/Si superlattices was explored. The layers of GaP were grown using time modulated enhanced deposition (atomic layer approach), while Si the conventional chemical vapor mode with high hydrogen dilution. (3 nm)GaP/(2 nm)Si formed on and substrates either by growth an amorphous multilayer structure followed thermal annealing at 450–900 °C or a superlattice temperatures not exceeding 400 °C. quantum confinement effect thin 2 nm...
As it was earlier described, capacitive electrodes could be widely used in electrocardiography, especially, the state-of-the-art personal devices as they employ major advantages of these sensors. But such a way electrocardiogram measurement usually generates quite noisy and unstable signals, which respectively must processed with some anti-jamming algorithm. At same time algorithm developers take into account low computing power portable devices, so designed methods "light" "fast". Such an...
The possibility of creating an upper junction multijunction III–V/Si solar cells based on GaP/Si superlattices (SL), grown using a combination plasma-enhanced atomic-layer deposition (PEALD) and chemical vapor (PECVD) technologies at temperature not exceeding 400 °C, is shown. Structural electrophysical studies SL were performed the photovoltaic properties them explored. obtained epitaxially silicon substrate has crystalline structure. According to electrochemical capacitance–voltage (ECV)...
We present a sophisticated simulation framework for few-mode fiber based space division multiplexing (SDM) transmission systems supporting the characterization of interplay between linear and nonlinear effects, design key components such as optical amplifiers. demonstrate its capabilities by discussing applications related to doped un-doped multimode design, Kerr-induced mode coupling, effective means digital equalization at receiver side.
This paper presents our study on the effect of thermal treatment to bulk silicon properties using careful surface chemical treatments and passivation. The procedures used for estimating carrier lifetime in include transient photoconductance decay (TPD), photoluminescence (PL) intensity PL time imaging. To exclude any graphite succeptor contamination measurements, 10 µm-thick layer was removed from each side wafers by etching (texturing) KOH+IPA solution. All samples had been cleaned with...
The impact of interface states on the quantum efficiency a‐Si:H/c‐Si solar cells based Si wires is studied using simulation and experimental measurements. key role wire geometry for sensitivity to sidewall demonstrated. A decrease in diameter leads enhanced recombination at radial due full inversion wire. Structures n‐Si with 0.5 1.5 μm doping level 2 × 10 15 cm −3 fabricated a combination latex sphere lithography cryogenic dry etching exhibit similar values open‐circuit voltage (0.5 V)...
Significant progress in photovoltaic conversion of solar energy can be achieved by new technological approaches that will improve the efficiency cells and make them appropriate for mass production. A approach growth III-V compounds on Si substrates using low temperature plasma-enhanced atomic layer deposition (PE-ALD) is explored paper. This technique, which consists alternatively changing phosphorus gallium atom source flows providing one monolayer cycle, was developed GaP films a standard...
Fast and simple ECG measurement is one of the major factors for success in emergency treatment operations. We propose conception system design directed to highest speed ease use by any patient. This approach incorporates three modern technologies sphere bioelectrical measurements: hand-held electrocardiographs, capacitive electrodes adaptive stabilization system. Here we publish small review results first tests with given technologies.