A5013633017- Nanowire Synthesis and Applications
- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Photonic and Optical Devices
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Molecular Junctions and Nanostructures
- 2D Materials and Applications
- Ga2O3 and related materials
- Chalcogenide Semiconductor Thin Films
- Force Microscopy Techniques and Applications
- solar cell performance optimization
- Plasmonic and Surface Plasmon Research
- Mechanical and Optical Resonators
- Photonic Crystals and Applications
- Quantum Dots Synthesis And Properties
- Gold and Silver Nanoparticles Synthesis and Applications
- Thermal properties of materials
- Thin-Film Transistor Technologies
- Surface and Thin Film Phenomena
- MXene and MAX Phase Materials
- Analytical Chemistry and Sensors
- Semiconductor materials and devices
St Petersburg University
2014-2025
Yerevan State University
2023-2025
Moscow Institute of Physics and Technology
2021-2024
Saint Petersburg Academic University
2012-2022
ITMO University
2017-2022
Eindhoven University of Technology
2017
Russian Academy of Sciences
2012-2014
Ioffe Institute
2012
Reduction of the wavelength in on-chip light circuitry is critically important not only for sake keeping up with Moore's law photonics but also reaching toward spectral ranges operation emerging materials, such as atomically thin semiconductors, vacancy-based single-photon emitters, and quantum dots. This requires efficient tunable sources well compatible waveguide networks. For first challenge, halide perovskites are prospective materials that enable cost-efficient fabrication micro-...
Engineering of nonlinear optical response in nanostructures is one the key topics nanophotonics, as it allows for broad frequency conversion at nanoscale. Nevertheless, application developed designs limited by either high cost their manufacturing or low efficiencies. This paper reports on efficient second-harmonic generation a free-standing GaP nanowire array encapsulated polymer membrane. Light coupling with resonances and field confinement nanowires together nonlinearity material yield...
Two‐dimensional transition metal dichalcogenides (TMDC) exhibit exceptional optical properties, such as strong light‐matter interaction and robust light emission. Nonetheless, their integration into conventional silicon‐based nanophotonic devices, which allow high emission efficiency is still challenging. Herein, a hybrid structure based on monolayer MoS 2 GaP nanowire for the enhancement of its directional outcoupling through presented. Furthermore, resonant action nanowire, leads to...
We study the synthesis of Ti₂AlC MAX-phase ceramics via spark plasma sintering (SPS), focusing on effects temperature, precursor composition, and transition metal doping (Mo, Ta, Hf, W, Y, Mn). Optimized parameters were established, defining ratios necessary for formation. Structural compositional analyses revealed that select metals—Ta, Y—can be incorporated into lattice, whereas Mo Mn predominantly form separate phases. These findings provide insights controlled...
Growth and properties of the self‐catalyzed heterostructured GaP nanowires (NWs) with 1 − x As insertions in form nanodiscs (NDs) grown by means molecular‐beam epitaxy on Si (111) substrate are studied. To obtain NDs different composition optoelectronic properties, ratio P fluxes is varied. Structural synthesized heterostructures characterized transmission electron microscopy. Energy dispersive X‐ray spectroscopy used to study chemical NDs. The maximum achieved fraction nearly 60%. Sublinear...
Rubber materials are the key components of flexible optoelectronic devices, especially for light-emitting diodes based on arrays inorganic nanowires (NWs).
The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic optical properties GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study NWs growth on bare substrate, silicon nitride interlayer, predeposited AlN GaO x layers, monolayer thick Ga wetting seeding prepared by droplet performed. It demonstrated that homogeneity morphology NW arrays drastically depend chosen technique. An effect layers...
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means plasma-assisted molecular beam epitaxy. the first part our investigate influence parameters geometrical properties NW arrays. First, find that annealing procedure carried out prior to deposition buffer affects elongation rate surface density wires. It has been experimentally demonstrated drastically depend...
We demonstrate that the use of a GaN seeding layer prepared prior to growth epitaxial on Si (111) can lead formation oriented arrays Y-shaped nanoislands and nanowires affects surface density nanostructures.
Nanowires represent numerous opportunities for nanoelectronics and sensorics, while metal contact fabrication makes the device development rather challenging. Here, we demonstrate that silicon (Si) nanowires deposited on interdigital contacts via simple drop casting exhibit an abrupt increase in conductivity upon exposure to ammonia vapors aqueous solutions due adsorption of analyte species. To reduce noise DC resistance measurements lacking ohmic conductivity, exploit electronic impedance...
Abstract Emerging technologies for integrated optical circuits demand novel approaches and materials. This includes a search nanoscale waveguides that should satisfy criteria of high density, small cross‐section, technological feasibility structural perfection. All these are met with self‐assembled gallium phosphide (GaP) epitaxial nanowires. In this work, the effects nanowire geometry on their waveguiding properties studied both experimentally numerically. Cut‐off wavelength dependence...
This work is aimed at the development of a highly sensitive silicon (Si)-based sensor allowing for selective detection and analysis liquid solution compositions containing ammonia (NH3) hydrochloric acid (HCl) in an indirect manner using electrochemical impedance spectroscopy (EIS). For optimization performance, we develop three types sensors based on as-fabricated Si nanowires, nanowires treated with hydrofluoric (HF), decorated silver (Ag) nanoparticles. The fabricated exhibit good...
In this Letter, we investigate the photovoltaic properties of heterojunction solar cells based on n-GaN nanowire (NW)/ p-Si substrate heterostructures by means numerical modeling. Antireflection NW array top Si were studied theoretically to show an order magnitude enhancement in antireflection comparison pure surface (2.5% vs. 33.8%). determine optimal morphology and doping levels structure with maximum possible efficiency simulated its properties. The carried out simulation showed that...
Controlled growth of heterostructured nanowires and mechanisms their formation have been actively studied during the last decades due to perspectives implementation. Here, we report on self-catalyzed axially GaPN/GaP Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition structural properties were examined means Raman microspectroscopy transmission electron microscopy. To study optical synthesized nanoheterostructures, nanowire array was embedded into silicone rubber...
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study highly controllable self-catalyzed growth gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. report approach form oxide layer, which reproducibly provides high yield vertical GaP control over NW surface density without pre-patterned mask....
Transition metal dichalcogenides (TMDCs), particularly molybdenum disulfide (MoS2), have gained significant attention in the field of optoelectronics and photonics due to their unique electronic optical properties. The integration TMDCs with plasmonic materials allows tailor response offers advantages for photonic applications. This study presents a novel approach synthesize MoS2-Au nanocomposites utilizing femtosecond laser ablation liquid achieve tunable properties near-infrared (NIR)...