A5083434214- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Quantum and electron transport phenomena
- Advanced Chemical Sensor Technologies
- GaN-based semiconductor devices and materials
- Advanced Semiconductor Detectors and Materials
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Electrochemical Analysis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- Spectroscopy Techniques in Biomedical and Chemical Research
- Analytical Chemistry and Sensors
- Oral microbiology and periodontitis research
- Advanced Sensor and Energy Harvesting Materials
- Advanced Thermoelectric Materials and Devices
- Advanced Research in Systems and Signal Processing
- Magnetic properties of thin films
- Quantum Dots Synthesis And Properties
- Technology Assessment and Management
- Bacterial Identification and Susceptibility Testing
- Dental Radiography and Imaging
- Electrochemical sensors and biosensors
- ZnO doping and properties
- Neuroscience and Neural Engineering
National Research University Higher School of Economics
2022-2024
St Petersburg University
2022
University of Science and Technology Beijing
2022
Skolkovo Institute of Science and Technology
2022
Peter the Great St. Petersburg Polytechnic University
2022
ITMO University
2016-2019
Saint Petersburg Academic University
2011-2016
Physico-Technical Institute
2011-2014
Ioffe Institute
2012-2013
Russian Academy of Sciences
2010-2011
The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic optical properties GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study NWs growth on bare substrate, silicon nitride interlayer, predeposited AlN GaO x layers, monolayer thick Ga wetting seeding prepared by droplet performed. It demonstrated that homogeneity morphology NW arrays drastically depend chosen technique. An effect layers...
Photoluminescence (PL) and highly circularly polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up room temperature, indicating a high efficiency of the radiative recombination in these QWs. The sign circular polarization indicates that it stems spin heavy holes caused by Zeeman effect. Although magnetic field lines strongly polarized, no energy shift between counter-polarized was observed. results suggest...
Electron spin polarization up to 100$%$ has been observed in type-II narrow-gap heterostructures with ultrathin InSb insertions an InAs matrix via investigation of circularly polarized photoluminescence external magnetic field applied Faraday geometry. The degree decreases drastically, changes its sign, and saturates finally at the value 10$%$ limit either high temperature or strong excitation. effect is explained terms Zeeman splitting electron conduction band a heavy-hole state confined...
Diluted magnetic semiconductor heterovalent AlSb/InAs/ZnMnTe quantum well (QW) structures with an electron channel have been designed and grown applying molecular-beam epitaxy. The enhanced properties of QWs as a result the exchange interaction Mn2+ ions, are proved by measuring microwave radiation induced spin polarized electric currents.
Abstract In this report we present the study, by means of low‐temperature magneto‐optical measurements, spin transport dynamics in a heterovalent MBE‐grown III‐V/II‐VI structure under optical pumping. The consists two coupled GaAs quantum wells (QWs) 100 Å and 50 surrounded (Al,Ga)As barriers, (Al,Ga)As/ZnSe interface, 10 nm (Zn,Mn)Se aligner, 70 thick ZnSe cap layer. We obtain values about 30% at 4.5 T for degree circular polarization. These results give some hints on design improvements...
Electrical properties of single GaN nanowires grown by means molecular beam epitaxy with N-plasma source were studied. Ohmic contacts connected to n-type wires produced the combination electron lithography, metal vacuum evaporation and rapid thermal annealing technique. The optimal temperature produce ohmic implemented in form Ti/Al/Ti/Au stack has been determined. By 2-terminal measurement wiring diagram conductivity NW obtained for NWs different growth parameters. method MESFET circuit...
The spherical diffusion that occurs when using ultramicroelectrodes (i.e., electrodes with a characteristic size of 1–10 µm) contributes to higher mass transfer rate. This leads equalization the depletion rates near-electrode layer due electrochemical reaction and supply product from solution depth. is reason why, for ultramicroelectrodes, limiting exists in which concentration gradient localized (diffusion layer). Thus, stationary mode achieved, expressed sigmoidal CV curve’s shape. In...
This paper demonstrates an elastic (i.e., both flexible and stretchable) pixel matrix based on the patterned films of single-walled carbon nanotubes, which were obtained using optical lithography plasma etching. The proposed electrodes maintain their initial resistivity at 10% stretching. We also demonstrate application to array III–V semiconductor nanowires encapsulated into polymer matrix, paves way for highly deformable inorganic light-emitting or photodetector devices.
We applied two new spectroscopic techniques (time-gated Raman microscopy and excitation-emission fluorescence microspectroscopy) to characterize healthy carious dental tissues. These methods were used together with visual inspection, DIAGNOdent, optical polarization microscopy, scanning electron chemical microanalysis get a more detailed picture of structural transformations in tissues as result caries development.
Magneto-optical properties of type II heterostructures with InSb/InAs quantum dots has been studied at external magnetic field applied in the Faraday geometry.The emission polarization degree can be changed range from 100% σ-minus to 10% σ-plus due excitation intensity and temperature variation.The detailed calculation band structure within a tight-binding approximation is presented.The simulation experimental data reveals that oscillator strength optical transitions involving electrons spin...
The variety of optical spectroscopic techniques is used for chemical analysis normal and carious tissues. Polarization light microscopy, fluorescence spectroscopy/microscopy, Raman IR spectroscopy/microscopy all provide valuable information on the tooth structure composition; however, near-IR laser-induced measurements proved to be most efficient indicator bacterially infected tooth.
Circular‐polarized magneto‐photoluminescence of InSb/InAs type‐II quantum dots has been investigated at a magnetic field applied in the Faraday geometry wide range excitation intensity. It was observed that under condition low (∼1 mW spot 1 mm diameter) luminescence from is 100% polarized even moderate 4T. Increase results diminishing polarization and change its sign power above ∼100 mW. The effect explained terms full electronic spin conduction band due to Zeeman InAs matrix power‐dependent...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Mikhail S. Mukhin, Yakov V. Terent'ev, Leonid E. Golub, O. Nestoklon, Boris Ya. Meltser, Alexey N. Semenov, Victor A. Solov'ev, Toropov, Sergey Ivanov; Electron Spin Alignment in InSb Type‐II Quantum Dots an InAs Matrix. AIP Conf. Proc. 26 December 2011; 1416 (1): 34–37. https://doi.org/10.1063/1.3671691...
The presented work is devoted to the study of possibility using planar materials consisting ultramicroelectrode arrays for voltammetric analysis compounds with close redox potential, but different diffusion coefficients, which has great prospects in various oligomers, including oligopeptides. A feature electrochemical behavior containing ultramicroelectrodes realization hemispherical diffusion, can lead steady state or unsteady regime electrode depending on intersection non-intersection...
In this report, we study influence of the Si (111) substrate surface preparation on growth, electronic and optical properties GaN nanowires (NWs) obtained via plasma-assisted molecular beam epitaxy. The varied from bare its deliberately nitridated counterpart to growth AlN Ga2O3 buffer layers Ga droplets seeding layers. Statistical data morphology synthesized arrays was analyzed. most homogeneous NW array in terms length distribution layer. It demonstrated that NWs density drastically...