A5028128844- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Semiconductor Quantum Structures and Devices
- Spectroscopy and Laser Applications
- Photonic Crystals and Applications
- Atmospheric Ozone and Climate
- Laser Design and Applications
- Optical Network Technologies
- Near-Field Optical Microscopy
- Integrated Circuits and Semiconductor Failure Analysis
- Gas Sensing Nanomaterials and Sensors
- Advanced Photonic Communication Systems
- Atmospheric chemistry and aerosols
- Advanced Fiber Laser Technologies
- Mechanical and Optical Resonators
- Terahertz technology and applications
- Semiconductor materials and devices
- Quantum optics and atomic interactions
- Molecular Junctions and Nanostructures
- Analytical Chemistry and Sensors
- Nanowire Synthesis and Applications
- Advanced Fiber Optic Sensors
- Neural Networks and Reservoir Computing
- Nanomaterials and Printing Technologies
- Solid State Laser Technologies
St Petersburg University
2020-2024
Nanophoton (Brazil)
2024
Saint Petersburg Academic University
2014-2023
National Research University Higher School of Economics
2021-2023
ITMO University
2018
Peter the Great St. Petersburg Polytechnic University
2013-2017
Tampere University
2016
Physico-Technical Institute
2016
Russian Academy of Sciences
2013-2015
We review epitaxial formation, basic properties, and device applications of a novel type nanostructures mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase deposition 4–16 monolayers InxGa1−xAs moderate indium composition (0.3 < x 0.5) on GaAs substrates represent dense arrays carrier localizing indium-rich regions inside In-depleted residual wells. intermediate in properties between 2D wells 0D dots show some advantages...
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type active region is used, namely InGaAs quantum well-dots representing a dense array indium-rich islands formed inside an indium-depleted residual well by metalorganic vapor phase epitaxy. demonstrate high output power 18 mW, differential efficiency about 31%, peak electrical-to-optical conversion 15% in 31 μm diameter laser. The continuous-wave lasing observed up to 110°C.
A 31 µm in diameter microdisk laser with an InAs/InGaAs quantum dot active region has been tested the continuous‐wave regime at elevated temperatures. Lasing is achieved up to 100°C a threshold current of 13.8 mA. The emission spectrum demonstrates single‐mode lasing 1304 nm side mode suppression ratio 24 dB and dominant linewidth 35 pm.
We report on direct large signal modulation and the reliability studies of microdisk lasers based InGaAs/GaAs quantum well-dots. A 23 μm in diameter microlaser exhibits an open eye diagram up to 12.5 Gbit/s is capable error-free 10 data transmission at 30°C without temperature stabilization. The ageing tests a 31 laser were conducted room elevated temperatures during more than 1200 hr. average rate output power degradation was about 25 29 nW/hr 40°C 60°C, respectively.
We fabricated and tested a quantum well laser with asymmetric barrier layers. Such has been proposed earlier to suppress bipolar carrier population in the optical confinement layer thus improve temperature-stability of threshold current. As compared conventional reference structure, our layers demonstrates reduced internal loss, lower current density at elevated temperatures, higher characteristic temperature (143 vs. 99 K 20 °C).
GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that arrays InGaAs well-dots enables uncooled high-frequency applications GHz-range bandwidth for lasers. A maximum 3 dB modulation frequency 5.9 GHz was found in the radius 13.5 μm operating without heatsink cooling. current efficiency factor 1.5 GHz/mA1/2 estimated.
An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable operating heatsink-free in continuous-wave regime at room elevated temperatures. record-low threshold current density 0.36 kA/cm2 achieved 31 µm diameter microdisks...
We discuss the effect of self-heating on performance injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for peak optical power limited by thermal rollover effect, corresponding current excess temperature device. The predicts, there exists maximum microlaser operation CW minimum mircrodisk diameter, which lasing possible. determine dependence device characteristics its...
We study the impact of improved heat removal on performance InGaAs/GaAs microdisk lasers epi-side down bonded onto a silicon substrate. Unlike initial characteristics microlasers GaAs substrate, former’s bonding results in decrease thermal resistance by factor 2.3 (1.8) microdisks with diameter 19 (31) µm, attributed to thinner layered structure between active region and substrate better conductivity Si than GaAs. Bonded show 2.4–3.4-fold higher maximum output power, up 21.7 mW, an...
The linewidth enhancement factor (LEF) of an InAs/InGaAs quantum dot Fabry-Pérot laser in a wide wavelength range from 1110 to 1300 nm, including ground state (GS) and exited (ES) bands, is studied. LEF spectra were derived amplified spontaneous emission measured below the threshold pulse regime. ES optical transition characterised by significantly lower values (≤0.54) as compared GS (≥1.21). Moreover, zero observed within spectral band. At sufficiently high currents, near-zero (|α| ≤ 0.1)...
Two-state lasing in devices based on undoped and p-type modulation-doped InAs/InGaAs quantum dots is studied for various cavity lengths temperatures. Modulation doping of the active region strongly enhances threshold current two-state lasing, preserves ground-state up to higher temperatures increases output power. The impact modulation especially strong short cavities.
The influence of the modulation p-doping level on multi-state lasing in InAs/InGaAs quantum dot (QD) lasers is studied experimentally for devices having various external losses. It shown that case short cavities (high loss), there an increase power component corresponding to ground-state optical transitions QDs as grows. However, long (small higher dopant concentrations may have opposite effect output power. Based these observations, optimal design laser geometry and doping are discussed.
Light-current characteristic (LCC) of a novel type quantum well (QW) lasers—QW lasers with asymmetric barrier layers (ABLs)—is studied. The ABLs (one on each side the QW) prevent electrons from entering hole-injecting structure and holes electron-injecting side. use thus suppresses parasitic electron-hole recombination outside QW eliminates mechanism sublinearity LCC in conventional associated this carrier capture delay into QW. As result, no matter how slow is QW, an ABL laser virtually...
The energy-to-data ratio (EDR) was evaluated for quantum-dot based microdisk laser directly modulated without external cooling. experimental values of EDR decrease with decreasing diameter the and reach 1.5 pJ/bit smallest under study (10.5 μm). In larger microdisks (with a greater than 20 μm), varies in proportion to square diameter. If this relationship were true smaller as well, an value about 100 fJ would be achieved 4 μm. observed deviation from quadratic dependence on is associated...
An AlGaAs/GaAs quantum well (QW) laser is fabricated with GaInP and AlGaInAs asymmetric barrier layers (ABLs) its light–current characteristic (LCC) compared that of a reference conventional QW without ABLs. It was found the use ABLs suppresses sublinearity LCC at high current densities. As result, maximum lasing power 9.2 W, being limited by catastrophic optical mirror damage, achieved considerably lower operating in as to (12.5 against 20.2 A). The ABL effect associated suppression...
The gain compression coefficient was evaluated by applying the frequency modulation/amplitude modulation technique in a distributed feedback InAs/InGaAs quantum dot laser. A strong dependence of on output power found. Our analysis within frame modified well-barrier hole burning model reveals that decreases beyond lasing threshold, which is good agreement with experimental observations.