A5036270469- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Acoustic Wave Resonator Technologies
- TiO2 Photocatalysis and Solar Cells
- Advancements in Semiconductor Devices and Circuit Design
- Quantum Dots Synthesis And Properties
- Plasmonic and Surface Plasmon Research
- Analytical Chemistry and Sensors
- Photonic and Optical Devices
- Gold and Silver Nanoparticles Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- Machine Learning in Materials Science
- Pigment Synthesis and Properties
- Metal and Thin Film Mechanics
- Copper-based nanomaterials and applications
- Advanced Sensor and Energy Harvesting Materials
- Nonlinear Optical Materials Studies
- Material Properties and Applications
- Silicon Nanostructures and Photoluminescence
- Nanomaterials and Printing Technologies
St Petersburg University
2020-2024
Institute for Analytical Instrumentation
2021-2024
Ioffe Institute
2024
Saint Petersburg Academic University
2019-2023
Institute of Physics
2022
Saint Petersburg State Electrotechnical University
2019
Abstract InGaN nanostructures are among the most promising candidates for visible solid-state lighting and renewable energy sources. To date, there is still a lack of information about influence growth conditions on physical properties these nanostructures. Here, we extend study nanowires directly Si substrates by plasma-assisted molecular beam epitaxy. The results showed that under appropriate change in temperature just 10 °C leads to significant structural optical nanowires. with areas...
We demonstrate spontaneous core–shell In x Ga 1− N nanowires exhibiting bright photoluminescence at 650 nm. The surprising effect of material separation is attributed to the periodically changing environment for single monolayer growth.
Hybrid nanostructures based on InGaN nanowires with decorated plasmonic silver nanoparticles are investigated in the present study. It is shown that induce redistribution of room temperature photoluminescence between short-wavelength and long-wavelength peaks nanowires. defined maxima decreased by 20%, whereas increased 19%. We attribute this phenomenon to energy transfer enhancement coalesced part NWs 10–13% In content tips above an about 20–23%. A proposed Fröhlich resonance model for NPs...
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development optoelectronic devices. Nanowires, due to their unique geometry, allow synthesis semiconductor light-emitting diodes (LED) crystalline lattice-mismatched wafers. Here, we present molecular beam epitaxy regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires tripods Si/SiO2 prepatterned with use cost-effective rapid microsphere optical lithography. This...
GaN nanowires were grown using selective area plasma-assisted molecular beam epitaxy on SiOx/Si(111) substrates patterned with microsphere lithography. For the first time, temperature–Ga/N2 flux ratio map was established for of nanowires. It is shown that growth selectivity without any parasitic a silica mask can be obtained in relatively narrow range substrate temperatures and Ga/N2 ratios. A model developed explains range, which appeared to highly sensitive temperature Ga flux, as well...
Abstract Investigation of ZnO thin films synthesis using RF magnetron sputtering deposition in the Ar/O 2 plasma gas mixture at different O composition and growth temperatures is presented. The effect process on structural (morphology orientation films, grain sizes, lattice parameters) optical (transmittance, absorption, refractive index, photoluminescence) properties are examined. It shown that synthesized a temperature from 200 to 300 °C polycrystal textured. Notice which pure Ar gas,...
We present the study of ZnO-Al2O3 thin coatings and nanocomposites prepared by a polymer-salt method. The demonstrate high transparency in UV-A (wavelength is about 300 to 400 nm) visible spectral ranges ability generate singlet oxygen under UV irradiation. materials were studied spectroscopic methods, scanning electron microscopy, x-ray diffraction analysis. Obtained films are (about 250 fully cover glass surface. They contain oriented ZnO nanocrystals 23 35 nm size. Coatings chemical...
The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array InP nanowires (NWs) InAsP nanoinsertion grown Au-assisted molecular beam epitaxy Si (111) substrates, was investigated. A significant dependence photoluminescence (PL) dynamics insertions ligand type shown, which associated changes in excitation translation channels...
Abstract In the article, study of morphology, crystal structure and chemical composition x Ga 1-x N nanostructures is presented. Scanning electron microscopy measurements show that sample has a consisting nanotubes, on top which an array nanocrystals (so-called “nanoflowers”) formed. The results transmission nanotubes have wurtzite structure, whereas “nanoflowers” exhibit both zinc blende one. indium in segments about 20 % 10 %, respectively.
A significant (up to 4 times) photoluminescence enhancement of single InP/InAsP/InP nanowires transferred onto a silicon oxide‐covered silver layer on substrate with metal surface roughness level less than 1 nm and dielectric thickness 5 has been demonstrated. This phenomenon is explained by the interaction electron–hole pairs in semiconductor plasmon polaritons. The kinetics results modeling confirm indicated mechanism.
In this work, we studied the influence of III/V flux ratio on structural and optical properties InGaN nanowires grown by plasma-assisted molecular beam epitaxy. It was found that formation with a core–shell structure occurs if is about 0.9–1.2 taking into account incorporation coefficient. At same time, an increase in from intermediate growth regime to metal-rich one leads decrease content ~45% ~35%. This exhibit photoluminescence at room temperature maximum range 600–650 nm. A further ~1.3,...
The reduction of substrate temperature is important in view the integration III–V materials with a Si platform. Here, we show way to significantly decrease by introducing procedure create nanoscale holes native-SiOx layer on Si(111) via In-induced drilling. Using fabricated template, successfully grew self-catalyzed GaAs nanowires molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside nanowires. This unambiguously manifests that proposed can be used for...
The spontaneous synthesis of InGaN/GaN nanowires core-shell heterostructure using molecular beam epitaxy isinvestigated in the work. It is shown by electron microscopy that a wedge-shaped crack can form at In content x=0.4 and 0.04 core shell correspondent. Based on model internal structural stresses, formula proposed for estimation critical size composition formation cracks NWs.The estimations experimental data morphology agree with each other.