Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s current densities ∼10 kA/cm2 are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100°C.

Error-free transmission is demonstrated at bit rates up to 40 Gbit/s in a back-to-back configuration and 35 over 100 m multimode fibre using directly modulated oxide confined 850 nm vertical cavity surface emitting laser.

We review epitaxial formation, basic properties, and device applications of a novel type nanostructures mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase deposition 4–16 monolayers InxGa1−xAs moderate indium composition (0.3 < x 0.5) on GaAs substrates represent dense arrays carrier localizing indium-rich regions inside In-depleted residual wells. intermediate in properties between 2D wells 0D dots show some advantages...

We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type active region is used, namely InGaAs quantum well-dots representing a dense array indium-rich islands formed inside an indium-depleted residual well by metalorganic vapor phase epitaxy. demonstrate high output power 18 mW, differential efficiency about 31%, peak electrical-to-optical conversion 15% in 31 μm diameter laser. The continuous-wave lasing observed up to 110°C.

Hybrid quantum well-dots (QWD) nanostructures have been formed by deposition of 7-10 monolayers In0.4Ga0.6As on a vicinal GaAs surface using metal-organic chemical vapor deposition. Transmission electron microscopy, photoluminescence and photocurrent analysis shown that such structures represent wells comprising three-dimensional (quantum dot-like) regions two kinds. At least 20 QWD layers can be deposited defect-free providing high gain/absorption in the 0.9-1.1 spectral interval. Use media...

Ultrasmall microring and microdisk lasers with an asymmetric air/GaAs/Al0.98Ga0.02As waveguide active region based on InAs/InGaAs/GaAs quantum dots emitting around 1.3 μm were fabricated studied. The diameter D of the microrings microdisks was either 2 or 1.5 μm, inner d varied from 20% to 70% outer D. = 0.8 demonstrated a threshold pump power as low 1.8 μW at room temperature. Lasing observed up 100°C owing use providing high confinement energy both for electrons holes. Tuning spectral...

Abstract Research into the formation of InAs quantum dots (QDs) in GaAs using metalorganic vapor phase epitaxy technique is presented. This deemed to be cheaper than more often used and studied molecular beam epitaxy. The best conditions for obtaining a high photoluminescence response, indicating good material quality, have been found among wide range possibilities. Solar cells with an excellent efficiency obtained, sub‐bandgap photo‐response 0.07 mA/cm 2 per QD layer, highest achieved so...

Phosphorus-rich InAsP nanowires are grown on silicon via molecular beam epitaxy. Nanowires demonstrate room temperature photoluminescence at wavelengths as short 1480 nm which is promising for optical communication and biomedical imaging.

Small and large signal modulation measurements are carried out for 850 nm vertical cavity surface emitting lasers (VCSELs). The resonance frequency, damping factor, parasitic D-factor extracted. bandwidths larger than 20 GHz measured. At currents the frequency response becomes partially limited by parasitics damping. Our results indicate that increasing optical 3 dB bandwidth may be extended to ∼25 GHz. A decrease in should enable VCSEL of 30 current densities not exceeding ∼10 kA/cm2...

Expanding the photosensitivity spectrum of a single‐junction GaAs‐based solar cell to 1100 nm by using InGaAs hybrid quantum well dots (QWDs) multilayer media is reported. This nanostructure represents an In 0.3 Ga 0.7 As wells with modulation thickness and composition. Up 15 QWD layers alternated GaAs spacers can be inserted in i‐region p–i–n junction without impairing its crystal quality efficiency spectral interval absorption. The are responsible for appearance longer wave response...

1.55-microm vertical cavity surface-emitting low-parasitic lasers show open eyes up to 22-Gb/s modulation speed. Uncooled error-free operation over a wide temperature range 85 degrees C under constant bias conditions is demonstrated at 12.5-Gb/s data rate. At these fixed the laser characteristics are practically invariant with temperature. These highest data-rates reported from long-wavelength VCSEL structure date.

Optical and electrical investigations of vertical-cavity surface-emitting lasers (VCSEL) with a monolithically integrated electro-optical modulator (EOM) allow for detailed physical understanding this complex compound cavity laser system. The EOM VCSEL light output is investigated to identify optimal working points. An electro-optic resonance feature triggered by the quantum confined Stark effect used modulate individual modes more than 20 dB an extremely small voltage change less 100 mV....

Lasing characteristics of InAs/InGaAs quantum dot microdisks with diameter varied from 1 to 6 μm were studied under optical pumping. The disks fabricated standard photolithography and two-step wet etching. We demonstrate room temperature lasing in the 1.29-1.32-μm wavelength range (ground-state transition) microlasers as small diameter. narrow linewidths (40-60 pm), low thermal impedance (85°C/mW), threshold powers (50-100 μW).

We present multioxide-aperture 980 nm-range vertical cavity surface emitting lasers (VCSELs) with highly temperature stable modulation characteristics operating error-free at 25 Gbit/s and 85 °C. perform small signal experiments extract the fundamental physical parameters including relaxation resonance frequency, damping factor, parasitic cut-off D-factor, K-factor, leading to identification of thermal processes as main factors that presently limit high speed device operation. obtain very...

Grown by metalorganic vapour phase epitaxy (MOVPE) InxGa1−xAs metamorphic laser power converters have been considered. Metamorphic buffer designs with high quality top layers developed. Photovoltaic In0.24Ga0.76As photoactive area and optimised demonstrated efficiency 41.4% for 1064 nm monochromatic radiation conversion ∼40% conversion.

We discuss the effect of self-heating on performance injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for peak optical power limited by thermal rollover effect, corresponding current excess temperature device. The predicts, there exists maximum microlaser operation CW minimum mircrodisk diameter, which lasing possible. determine dependence device characteristics its...

A turn-on of a quantum dot semiconductor laser is analyzed in detail both theoretically and experimentally. We show that lasers have nonlinear damping rate which strongly affects dynamics due to the non-instantaneous capture carriers dot. It results nonvanishing delay even at very high pumping good agreement with experiment.

InP is one of the most important materials for optoelectronics as a direct bandgap semiconductor, which can also be regarded low loss alternative plasmonic material mid-infrared (mid-IR).The films studied in this work were grown by metal-organic vapor phase epitaxy (MOVPE).The effect growth conditions on optical and electrical properties silicon doped (InP:Si) wavelength range from 3 to 40 µm was studied.The carrier concentration up 3.9 × 10 19 cm -3 achieved optimizing conditions.The...

Focused ion beam is applied to quantum dot based microresonators form pits or groove on their surface. The emission spectra of the resonators lasers are significantly thinned out after milling, and one two modes become dominant instead a group having comparable intensities. linewidth lasing mode kept unchanged, whereas threshold demonstrates an insignificant growth.

We studied the different carrier kinetic mechanisms involved into interband absorption of quantum dots (QDs) by photocurrent spectroscopy. It was shown that in vertically coupled InGaAs QDs an effective emission, collection and separation take place due to minizone formation. The possibility for incorporation vertically-coupled solar cells (SC) without any deterioration structural quality p-i-n-junction has been shown. Due additional spectrum QD media subsequent photogenerated carriers,...

We present 1.55-μm short-cavity VCSELs with modulation bandwidths beyond 17 GHz and extremely low parasitics. These devices are the first long-wavelength enabling error-free data-transmission at 25-Gb/s over 4.2 km standard single-mode fiber.