В. Д. Андреева

ORCID: 0000-0001-6085-4153
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Research Areas
  • Transition Metal Oxide Nanomaterials
  • ZnO doping and properties
  • Perovskite Materials and Applications
  • Ga2O3 and related materials
  • Optical properties and cooling technologies in crystalline materials
  • Phase-change materials and chalcogenides
  • Luminescence Properties of Advanced Materials
  • Glass properties and applications
  • Material Properties and Applications
  • Solid-state spectroscopy and crystallography
  • Chalcogenide Semiconductor Thin Films
  • Advanced Thermoelectric Materials and Devices
  • Gas Sensing Nanomaterials and Sensors
  • Advanced Photocatalysis Techniques
  • Pigment Synthesis and Properties
  • Metal and Thin Film Mechanics
  • GaN-based semiconductor devices and materials
  • Extraction and Separation Processes
  • Nuclear Materials and Properties
  • Aluminum Alloys Composites Properties
  • Aluminum Alloy Microstructure Properties
  • Intermetallics and Advanced Alloy Properties
  • Quantum Dots Synthesis And Properties
  • nanoparticles nucleation surface interactions
  • TiO2 Photocatalysis and Solar Cells

Peter the Great St. Petersburg Polytechnic University
2007-2024

Abstract Nickel oxide is a promising material for transparent electronics applications. This semiconductor demonstrates the possibility of modifying its physical properties depending on method growth and subsequent processing. Here effects discharge power are reported during reactive dc magnetron sputtering, as well modes annealing NiO films, their structural, electrical, optical properties. films annealed at various temperatures both in an oxygen‐containing environment under vacuum...

10.1002/admi.202300815 article EN cc-by Advanced Materials Interfaces 2024-01-12

Abstract The ability to predict the influence of dopants (such as antimony) on short‐range structure As‐S‐I glasses has potential help design with modified properties. In present work, As‐Sb‐S‐I been investigated along As SI ‐Sb section fixed sulfur and iodine concentrations equivalent arsenic by antimony substitution. At high content (As:Sb≥2:1) substitutes in AsI 3 molecules justified Raman spectroscopy XPS . Further introduction (As:Sb<2:1) leads substitution ‐S‐As‐S‐ polymeric chains,...

10.1111/ijag.12279 article EN International Journal of Applied Glass Science 2017-06-09

The growth of cubic and rhombohedral In 2 O 3 (InGa) epitaxial films by halide vapor phase epitaxy (HVPE) is reported. deposition carried out at 625 °C using indium trichloride (InCl ), gallium monochloride (GaCl), precursors on (0001) sapphire substrates, HVPE‐grown Ga /Al metal‐organic chemical (MOCVD)‐grown GaN/Al templates. HVPE pure with corundum structure reported for the first time.

10.1002/pssa.202000442 article EN physica status solidi (a) 2020-11-22

The application of superconducting niobium nitride thin film coating with in the production technology a spherical rotor cryogenic gyroscope is considered. rotor, as main constructive element, contains local contrast lines oxide films on base surface. Contrast are necessary for providing functionality gyro's read-out system. proposed implies using instead along connection stripes each other closed loops formation. Such approach allows eliminating heat losses during acceleration up to working...

10.1109/elconrus51938.2021.9396714 article EN 2021-01-26

Technological schemes of niobium carbide and nitride formation obtained by thermal laser treatment are developed. The results X-ray powder diffraction (XRD) analysis in agreement with theoretical evaluations based on thermodynamic calculations proving the effectiveness suggested approach. perspectives a practical application proposed technological solutions for cryogenic gyroscope manufacturing technology presented.

10.22349/1994-6716-2023-116-4-69-81 article EN Voprosy Materialovedeniya 2024-02-20

In this study, results on the effect of technological parameters nickel(II)‐oxide thin‐film deposition process, obtained through chemical vapor in an argon–oxygen environment using bis‐(ethylcyclopentadienyl)‐nickel (EtCp) 2 Ni, their electrochromic properties, are presented. It is shown that films lose ability to coloring alkaline environments as thickness increases up 170 nm. The introduction small ozone additions 0.1 vol% O 3 into gas phase leads a decrease NiO rate, formation rougher...

10.1002/pssa.202300825 article EN physica status solidi (a) 2024-05-02

Nitrogen-doped titanium dioxide is often considered as a promising nanomaterial for photocatalytic applications. Here we report the first results of study APCVD N-doped TiO2 thin films prepared with use ammonia source nitrogen and tetraisopropoxide (TTIP) Ti O atoms. The obtained were analyzed X-ray diffraction, infrared spectroscopy, atomic force microscopy, photoelectron UV-Vis ellipsometry. It was found that film growth rate in TTIP-NH3-Ar reaction system varied insignificantly substrate...

10.1166/jnn.2011.5072 article EN Journal of Nanoscience and Nanotechnology 2011-09-01

This paper investigates the optical and electrical properties of ITO films for their application as a transparent contact electrode to NiO films. The were fabricated by magnetron sputtering at various parameters discharge power oxygen content in working gas mixture. Structural analysis showed an increase crystallinity during subsequent annealing. demonstrate high conductivity transparency with absorption edge higher than that results study show potential using create layers.

10.1109/eexpolytech58658.2023.10318652 article EN 2022 International Conference on Electrical Engineering and Photonics (EExPolytech) 2023-10-19

The paper presents the results of a study on preparation halide perovskite nanocrystals in solid-state matrix. Borosilicate glass was used as matrix for CsPbBr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> nanocrystals. X-ray phase, energy dispersive and luminescent analyzes are presented.

10.1109/eexpolytech56308.2022.9950909 article EN 2022 International Conference on Electrical Engineering and Photonics (EExPolytech) 2022-10-20
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