A5077984332- Photorefractive and Nonlinear Optics
- Photonic and Optical Devices
- Ga2O3 and related materials
- Advanced Fiber Laser Technologies
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Radioactive element chemistry and processing
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- Extraction and Separation Processes
- Advanced Optical Sensing Technologies
- Optical and Acousto-Optic Technologies
- Semiconductor Quantum Structures and Devices
- Solid State Laser Technologies
- Spectroscopy and Laser Applications
- Metal and Thin Film Mechanics
- Plasma Diagnostics and Applications
- Nuclear Materials and Properties
- Gas Sensing Nanomaterials and Sensors
- Laser Design and Applications
- Electronic and Structural Properties of Oxides
- Mechanical and Optical Resonators
- Advanced Optical Imaging Technologies
- Liquid Crystal Research Advancements
- Plasma Applications and Diagnostics
Ioffe Institute
1993-2024
Moscow Engineering Physics Institute
2003-2023
D. Mendeleyev University of Chemical Technology of Russia
2013-2023
National University of Science and Technology
2020-2023
Babeș-Bolyai University
2023
Frumkin Institute of Physical Chemistry and Electrochemistry
2016-2023
Physico-Technical Institute
1980-2022
Center for Scientific Research and Higher Education at Ensenada
2022
University of Florida
2022
Institute of Microelectronics Technology and High Purity Materials
2022
This paper gives a thorough treatment of new effect non-steady-state photo-electromotive-force (emf). The consists an alternating electric current arising in short-circuited bulk sample photoconductor illuminated by vibrating sinusoidal pattern. As detailed theoretical analysis shows, the frequency transfer function is identical with that differentiating RC circuit having time constant equal to characteristic space-charge grating formation within volume τsc. For high excitation frequencies...
In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under same conditions. Gallium were deposited at 500 °C–600 °C basal plane (0001) planar and patterned sapphire substrates, 2H-GaN, 4H-SiC, <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mfenced close=")" open="(" separators=""> <mml:mrow> <mml:mover accent="true"> <mml:mn>2</mml:mn> <mml:mo stretchy="true">¯</mml:mo> </mml:mrow> </mml:mover>...
The main suggestions in practical applications of dynamic photorefractive holographic recording for interferometry, processing 2D pictures, operations with laser beams, and memory systems are reviewed. Specific techniques underlying these applications, particular, methods continuous nondestructive hologram reconstruction, nonlinearities mechanisms, basic limitations due to geometrical factors, Bragg diffraction, optical noise considered detail. paper is preceded by two introductory sections...
The defect structure of α-phase gallium oxide thin films was investigated using transmission electron microscopy (TEM). Epitaxial Ga2O3 were grown via halide vapor-phase epitaxy on c-plane sapphire substrates. TEM analysis revealed a high density extended planar defects within the films, primarily located along prismatic planes {112¯0} type. Displacement vectors determined invisibility criterion for stacking faults. study encompassed both and cross-sectional views films. It is hypothesized...
We report the measurements of picometer vibration amplitudes produced by a piezo mirror in an interferometric setup, using GaAs:Cr photoconductive device. The moving light fringes (gratings) induce this new detector periodic photocurrents characterized efficient suppression low-frequency drifts working point and low sensitivity to amplitude laser noise. optimum operation conditions system are also shown.
Films of α -Ga 2 O 3 doped with Sn were grown by halide vapor phase epitaxy (HVPE) on planar and patterned sapphire substrates. For substrates, the same high flow, total concentration donors was varying from 10 17 cm −3 to 18 . The donor centers shallow states activation energies 35–60 meV, levels near E c –(0.1–0.14) eV (E1), –(0.35–0.4) (E2). Deeper electron traps −0.6 (A), −0.8 (B), −1 (C) detected in capacitance or current transient spectroscopy measurements. Annealing heavily...
Epitaxial layers of α-Ga2O3 with different Sn doping levels were grown by halide vapor phase epitaxy on sapphire. The films had shallow donor concentrations ranging from 1017 to 4.8 × 1019 cm−3. Deep level transient spectroscopy the lowest doped samples revealed dominant A traps Ec − 0.6 eV and B near 1.1 eV. With increasing concentration, density increased, new C (Ec 0.85 eV) D 0.23 emerged. Photocapacitance spectra showed presence deep optical ionization energy ∼2 2.7 prominent persistent...
The growth of Ga 2 O 3 films by halide vapor phase epitaxy on plain and cone‐shaped patterned sapphire substrates (PSS) is reported. obtained specimens are characterized X‐ray diffraction, transmission electron microscopy, cathodoluminescence, optical spectroscopy, current–voltage measurements. Both types layers reasonably high crystal qualities; their physical properties, however, very different. Under the same conditions, results in a continuous α‐Ga layer, whereas PSS produces regular...
Thick (23 µm) films of κ-Ga2O3 were grown by Halide Vapor Phase Epitaxy (HVPE) on GaN/sapphire templates at 630 °C. X-ray analysis confirmed the formation single-phase with half-widths high-resolution x-ray diffraction (004), (006), and (008) symmetric reflections 4.5 arc min asymmetric (027) reflection 14 min. Orthorhombic polymorph was from Kikuchi pattern in electron backscattering diffraction. Secondary imaging indicated a reasonably flat surface morphology few (area density ∼103 cm−2)...
The effect of the non-steady-state photoelectromotive force (PEMF) in photoconductive crystals is considered for excitation frequencies equal to or higher than inverse photocarrier lifetime. theoretical analysis, based on a widely used model an impurity photoconductor with one partially compensated donor level, performed case external dc electric field applied sample. average lifetimes photoelectrons and their mobilities are estimated from experiments PEMF cubic BSO BTO crystals.
The review discusses various alternative approaches for spent nuclear fuel (SNF) reprocessing in aqueous carbonate media. main stages, schemes, and methods of the most well-known well-described processes SNF some high-level radioactive waste using systems developed by research groups Japan, United States America, Republic Korea, Russian Federation described compared. advantages such are outlined compared to nitric acid levels development proximity designed industrial implementation shown....
Ga 2 O 3 layers with thickness from 10 to 86 μ m were grown by halide vapor phase epitaxy (HVPE) on GaN(0001)/sapphire templates in a hot wall reactor at 570 °C, the growth rate of about 3–4 h −1 . The consisted pure (001)-oriented κ -Ga polymorph no admixture β or α phases. narrowest (004) X-ray rocking curves observed for 13–20 thick layers. A further increase results deterioration crystal quality which is indicated broadening curves. Electrical measurements revealed that they n-type,...
A common laboratory facility for creating glowing flying plasmoids akin to a natural ball lightning, allowing number of experiments be performed investigate the main properties is described.
Experimental results are reported for four-wave mixing at 633 nm with a photorefractive Bi12TiO20 crystal in double phase-conjugate mirror geometry. Recording the presence of an alternating electric field optimum focusing interacting Gaussian beams yields up to 40% diffraction efficiency hologram.