A5024603899- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Advanced Chemical Sensor Technologies
- Transition Metal Oxide Nanomaterials
- Semiconductor materials and devices
- Spectroscopy and Laser Applications
- Electronic and Structural Properties of Oxides
- Analytical Chemistry and Sensors
- GaN-based semiconductor devices and materials
- Perovskite Materials and Applications
- Geological Studies and Exploration
- Sensor Technology and Measurement Systems
- Methane Hydrates and Related Phenomena
- Geotechnical and Geomechanical Engineering
- Electrical and Thermal Properties of Materials
- Water Quality Monitoring and Analysis
- Photocathodes and Microchannel Plates
- Luminescence Properties of Advanced Materials
- Catalytic Processes in Materials Science
National Research Tomsk State University
2015-2024
University of Oslo
2021
Indian Institute of Technology Jodhpur
2021
Chuvash State Agricultural Academy
2021
N. I. Lobachevsky State University of Nizhny Novgorod
2021
Institute of Physics and Technology
2021
Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials research technology nowadays due to unique properties, such as an ultra-wide band gap a very high breakdown electric field, finding number of applications electronics optoelectronics. Ion implantation traditional technological method used these fields, well-known advantages can contribute greatly rapid development physics Ga2O3-based devices. Here, current status ion beam...
Pt/(100) β-Ga2O3 Schottky barrier diodes were fabricated using a plate cleaved from the crystal grown by Czochralski method. Their electroconductive and photoelectric characteristics studied. The following values obtained: height (1.69/1.62/1.74 eV), ideality coefficient (1.09/1.14), saturation current density (9.91 × 10–15 A/cm2), diode series resistance (7.98 kΩ), net donor concentration [(1.8–2.4) 1018 cm–3]. demonstrate high rectification ratio of 1010 at an applied voltage ± 1 V...
The MSM structures based on high-quality 1.6- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -thick notation="LaTeX">$\alpha $ -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for detection of short-wave ultraviolet (UVC) radiation. spectral dependences responsivity, external quantum efficiency...
Abstract High-speed solar-blind short wavelength ultraviolet radiation detectors based on κ ( ε )-Ga 2 O 3 layers with Pt contacts were demonstrated and their properties studied in detail. The deposited by the halide vapor phase epitaxy patterned GaN templates sapphire substrates. spectral dependencies of photoelectric structures analyzed interval 200–370 nm. maximum photo to dark current ratio, responsivity, detectivity external quantum efficiency determined as: 180.86 arb. un., 3.57 A/W,...
Deep centers and their influence on photocurrent spectra transients were studied for interdigitated photoresistors α -Ga 2 O 3 undoped semi-insulating films grown by Halide Vapor Phase Epitaxy (HVPE) sapphire. Characterization involving current-voltage measurements in the dark with monochromatic illumination photons energies from 1.35 eV to 4.9 eV, Thermally Stimulated Current (TSC), Photoinduced Transients Spectroscopy (PICTS) showed Fermi level was pinned at E c −0.8 other prominent being...
High-temperature β-Ga2O3:Cr2O3-based sensors sensitive to oxygen- and hydrogen-containing gases have been developed studied. Magnetron cosputtering is the method of choice for thin film synthesis as an industry-compatible technique. The composition-structure-properties relationship has revealed. An introduction 0.04–0.14 wt. % Cr leads a significant increase in response O2 over temperature range 250–400 °C. highest above-mentioned achieved addition 0.14 %. content from 0.04 0.22 decrease...
The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. κ(ε)-Ga2O3:Sn SnO2 films grown by halide vapor phase epitaxy high-frequency magnetron sputtering, respectively. gas sensor response speed operation structures under H2 exposure exceeded corresponding values single within temperature range 25–175 °C. Meanwhile, demonstrated a low to CO, NH3, CH4 gases high NO2, even at concentrations 100 ppm. current responses...
The paper presents the results of an investigation nanostructure, elements, and phase composition thin (100–140 nm) tin dioxide films obtained via magnetron sputtering containing Ag, Y, Sc, Ag + Sc additives in volume. Electrical gas‐sensitive characteristics hydrogen sensors based on these with dispersed Pt/Pd layers deposited surface were studied. had a significant effect nanostructure films, density oxygen adsorption sites dioxide, band bending at grain boundaries resistance values pure...
Vertical Schottky barrier diodes based on an ion beam sputter (IBS)-deposited β-Ga2O3 film a single-crystalline (2¯01) unintentionally doped (UID) with Ni contact were developed. To form ohmic Ti/Ni contacts, the IBS-Ga2O3/UID structures wet-etched, and indium tin oxide (ITO) intermediate semiconductor layer (ISL) was deposited opposite surface of UID β-Ga2O3. The IBS-deposited Ga2O3 polycrystalline semi-insulating. Low leakage currents, rectification ratios 3.9 × 108 arb. un. 3.4 106 un.,...
Abstract Detectors were developed for detecting irradiation in the short-wavelength ultraviolet (UVC) interval using high-quality single-crystalline α -Ga 2 O 3 films with Pt interdigital contacts. The of grown on planar sapphire substrates c -plane orientation halide vapor phase epitaxy. spectral dependencies photo to dark current ratio, responsivity, external quantum efficiency and detectivity structures investigated wavelength 200−370 nm. maximum efficiency, 1.16 × 10 4 arb. un., 30.6...
The electrical conductivity of pseudohexagonal ε(κ)‐Ga 2 O 3 films under different ambient gases (H , NO and CO) is studied in a range temperatures from 400 to 550 °C. exposure reducing such as H CO results reversible increase current conductance. the oxidizing has opposite effect. maximum response observed at 500 °C 450 for respectively. highest sensitivity achieved low applied voltages (≤7.9 V). In contrast, high voltages. recovery times temporal drift characteristics are estimated....
Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and annealed at temperatures of 500 °C 600 °C. The structural, optical, electrically conductive gas-sensitive properties indium studied. possibility developing sensors with low nominal resistance relatively high sensitivity to gases was shown. in pure dry air did not exceed 350 Ohms dropped about 2 times when increasing the annealing temperature 100 characterized gases. maximum responses...
The gas sensitivity and structural properties of TiO2 thin films deposited by plasma-enhanced atomic layer deposition (ALD) were examined in detail. are using Tetrakis(dimethylamido)titanium(IV) oxygen plasma at 300 °C on SiO2 substrates followed annealing temperatures 800 °C. Gas under exposure to O2 within the temperature range from 30 700 was studied. ALD-deposited demonstrated high responses dynamic 0.1 100 vol. % low concentrations H2, NO2. ALD allowed enhancement gases. greatest...
Electrical conductivity and gas sensitivity of α-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ε ( κ)-Ga structures were measured for oxygen concentrations ranging from 2 % to 100 temperatures 25 °C 220 °C. It was found that the depended on donor dopant concentration. The /ε( doped with ~ 1.5×10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm...