A5082629651- Advanced Memory and Neural Computing
- Neuroscience and Neural Engineering
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- Neural dynamics and brain function
- Advanced Photocatalysis Techniques
- Ga2O3 and related materials
- Photoreceptor and optogenetics research
- CCD and CMOS Imaging Sensors
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Ferroelectric and Negative Capacitance Devices
- Silicon and Solar Cell Technologies
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Transition Metal Oxide Nanomaterials
- Machine Learning in Materials Science
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Diamond and Carbon-based Materials Research
- Phase-change materials and chalcogenides
N. I. Lobachevsky State University of Nizhny Novgorod
2015-2024
Institute of Physics and Technology
2017-2024
Nizhny Novgorod Institute of Management and Business
2023
Indian Institute of Technology Jodhpur
2021
University of Oslo
2021
Chuvash State Agricultural Academy
2021
National Research Tomsk State University
2021
Saratov State University
2016
Yaroslav-the-Wise Novgorod State University
2016
Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials research technology nowadays due to unique properties, such as an ultra-wide band gap a very high breakdown electric field, finding number of applications electronics optoelectronics. Ion implantation traditional technological method used these fields, well-known advantages can contribute greatly rapid development physics Ga2O3-based devices. Here, current status ion beam...
A filamentary model of bipolar resistive switching has been developed for the Au/ZrO2(Y)/TiN/Ti memristive nanostructures by using kinetic Monte-Carlo approach migration oxygen vacancies at stages electroforming, SET, and RESET processes observed experimentally in current-voltage hysteresis. Statistics forming voltages are collected used to simulate characteristics based on a simplified multi-filament model. It is demonstrated that both abrupt gradual behaviours can be determined parameters...
The study of light-emitting defects in silicon created by ion implantation has gained renewed interest with the development quantum optical devices. Improving techniques for creating and optimizing these remains a major focus. This work presents comprehensive analysis photoluminescence line at wavelength 1240 nm (1 eV) caused arising from irradiation SiO2/Si system subsequent thermal annealing. It is assumed that this emission due to formation defect complexes WM trigonal symmetry similar...
An original approach has been presented to model the regularities and parameters of resistive switching based on kinetic Monte Carlo (kMС) 3D simulation stochastic migration oxygen vacancies/ions in metal-oxide memristive devices promising for applications emerging nonvolatile memory, in-memory neuromorphic computing systems. The efficiency flexibility is demonstrated by examples experimentally realized Au/oxide/TiN device structures, which yttria-stabilized zirconia (ZrO2(Y))...
Abstract The development of artificial intelligence systems is needed to solve many important challenges in neurobiology and neuroengineering for recreation brain functions efficient biorobotics. Here we propose a metal-oxide memristive device compatible with CMOS technology suitable hardware implementation neuromorphic tasks. However, memristors have significant drawback such as variation resistive switching parameters due the stochastic nature filament formation oxide material. In this...
GaN nanocrystals were formed in a silicon matrix by sequential implantation of Ga<sup>+</sup> and N<sub>2</sub><sup>+</sup> ions followed either Furnace Annealing (FA) or Rapid Thermal (RTA).
Adaptive behavior of resistive state in response to electrical stimulation has been studied for the silicon oxide based memristive nanostructures subjected electroforming conditions current compliance. The limitation and temperature during affects parameters growing conductive filaments reduction-oxidation reactions resulting a higher dynamic range gradual resistance change important neuromorphic applications.
In this work, molecular dynamics modeling of the processes self-annealing filament structures in memristors based on a-SiO2 films different stoichiometry and subjected to ion irradiation was performed
Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials research technology nowadays due to unique properties, such as an ultra-wide band gap a very high breakdown electric field, finding number of applications electronics optoelectronics. Ion implantation traditional technological method used these fields, well-known advantages can contribute greatly rapid development physics Ga2O3-based devices. Here, current status ion beam...