A5089054345- Silicon Nanostructures and Photoluminescence
- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor materials and devices
- Advanced Photocatalysis Techniques
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Ion-surface interactions and analysis
- Nanowire Synthesis and Applications
- Diamond and Carbon-based Materials Research
- Integrated Circuits and Semiconductor Failure Analysis
- GaN-based semiconductor devices and materials
- Thin-Film Transistor Technologies
- Gas Sensing Nanomaterials and Sensors
- Advanced Surface Polishing Techniques
- Biofield Effects and Biophysics
- Planetary Science and Exploration
- Copper-based nanomaterials and applications
- Solid-state spectroscopy and crystallography
- Carbon Nanotubes in Composites
- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- MXene and MAX Phase Materials
- Laser-induced spectroscopy and plasma
- Advanced ceramic materials synthesis
N. I. Lobachevsky State University of Nizhny Novgorod
2017-2024
Institute of Physics and Technology
2018-2024
Institute of Physics and Technology
2019-2023
University of Oslo
2021
Indian Institute of Technology Jodhpur
2021
Chuvash State Agricultural Academy
2021
National Research Tomsk State University
2021
Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials research technology nowadays due to unique properties, such as an ultra-wide band gap a very high breakdown electric field, finding number of applications electronics optoelectronics. Ion implantation traditional technological method used these fields, well-known advantages can contribute greatly rapid development physics Ga2O3-based devices. Here, current status ion beam...
The study of light-emitting defects in silicon created by ion implantation has gained renewed interest with the development quantum optical devices. Improving techniques for creating and optimizing these remains a major focus. This work presents comprehensive analysis photoluminescence line at wavelength 1240 nm (1 eV) caused arising from irradiation SiO2/Si system subsequent thermal annealing. It is assumed that this emission due to formation defect complexes WM trigonal symmetry similar...
Semiconductor quantum dots have attracted tremendous attention owing to their novel electrical and optical properties as a result of size dependent confinement effects. This provides the advantage tunable wavelength detection, which is essential realize spectrally selective photodetectors. We report on fabrication characterization high performance narrow band ultraviolet photodetector (UV-B) based Indium oxide (In2O3) nanocrystals embedded in aluminium (Al2O3) matrices. The In2O3 are...
Ion implantation is a promising method for the development of β-Ga2O3-based technologies and devices. However, physical principles ion this particular semiconductor are still at early stage development. One primary tasks study electrical properties ion-doped layers. In work, we have investigated parameters layers produced by shallow donor impurity—silicon—into semi-insulating β-Ga2O3 doped with iron having surface orientation (−201). It established that activation efficiency implanted...
Light-emitting layers of hexagonal 9R silicon were synthesized by ion implantation into SiO2/Si substrates. Using cross-sectional transmission electron microscopy, the formation a phase in cubic substrate near interface with dioxide under irradiation Kr+ ions (80 keV) and subsequent annealing at 800 °C is demonstrated. Arguments explaining how new formed through hexagonalization initial are presented. The 9R-Si characterized low-temperature photoluminescence line maximum wavelength around...
Gallium oxide nanocrystals encapsulated in Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> film on a Si substrate have been synthesized by using ion implantation followed thermal annealing at 800 °C or 900 °C. Formation of β-Ga is confirmed transmission electron microscopy. The photoresponse photodetector fabricated the implanted layer deposition interdigitated electrode pattern...
A novel and promising way for creating nanomaterials based on gallium oxide is the ion synthesis of Ga2O3 nanocrystals in a SiO2/Si dielectric matrix. The properties are determined by conditions synthesis-the parameters irradiation post-implantation heat treatment. In this work, light-emitting were studied depending temperature annealing atmosphere. It was found that at 900 °C leads to appearance intense luminescence with maximum ~480 nm caused recombination donor-acceptor pairs. An increase...
Nitrogen plays an important role in the Ga2O3-based device fabrication since it demonstrates a deep acceptor behavior and can be used as compensation impurity. In present work, we introduced N into monoclinic β-Ga2O3 single crystals by ion implantation using different dose-rates. The thermal evolution of structural optical properties implanted samples was studied combining Rutherford backscattering/channeling spectrometry x-ray diffraction with photoluminescence spectroscopy. We demonstrate...
The effect of the Si+ ion implantation on gas-sensing properties single-crystal (0001) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula> -Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose notation="LaTeX">$8\times 10^{{12}}$ – 10^{{15}}$ cm notation="LaTeX">$^{-{2}}$ at an energy 100 keV followed...
A new method for creating nanomaterials based on gallium oxide by ion-beam synthesis of nanocrystals this compound in a SiO2/Si dielectric matrix has been proposed. The influence the order irradiation with ions phase-forming elements (gallium and oxygen) chemical composition implanted layers is reported. separation profiles elemental oxidized states shown, even absence post-implantation annealing. As result annealing, blue photoluminescence, associated recombination donor-acceptor pairs...
The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared the traditional cubic phase Si. Thus, for some phases, a significant improvement in emission has been demonstrated. In this work, luminescent SiO2/Si structures irradiated with Kr+ ions at different doses and annealed 800 °C have systematically investigated. For such structures, photoluminescence line ∼ 1240 nm is observed associated formation 9R-Si inclusions. It found that...
This paper presents a molecular dynamics simulation of hypersonic wave propagation in liquid–solid systems such as aqueous solutions NaCl and glass (containing Na ions); the role waveguide properties Na+–(H2O)n–type clusters is analyzed; Na+–(H2O)n-type waves discussed. The interaction between hypersound cellular organelles was studied numerically compared with biological experiments on seeds spring soft wheat variety Ekada 70, particular effect this their growth. irradiation affects...