A5013806354- Silicon Nanostructures and Photoluminescence
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Lasers and Optical Devices
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Quantum and electron transport phenomena
- Magnetic properties of thin films
- Electron and X-Ray Spectroscopy Techniques
- Magnetic Field Sensors Techniques
- X-ray Diffraction in Crystallography
- Optical Coatings and Gratings
- Graphene research and applications
- Plasmonic and Surface Plasmon Research
- Surface and Thin Film Phenomena
- Microstructure and mechanical properties
- Characterization and Applications of Magnetic Nanoparticles
- X-ray Spectroscopy and Fluorescence Analysis
Institute for Physics of Microstructures
2015-2024
Russian Academy of Sciences
2008-2024
Jagiellonian University
2024
AGH University of Krakow
2024
N. I. Lobachevsky State University of Nizhny Novgorod
2014-2017
Yaroslav-the-Wise Novgorod State University
2015-2016
Saratov State University
2015
Abstract Germanium self‐assembled nanoislands and quantum dots are very prospective for CMOS‐compatible optoelectronic integrated circuits but their photoluminescence (PL) intensity is still insufficient many practical applications. Here, it demonstrated experimentally that the PL of Ge in silicon photonic crystal slabs (PCS) with hexagonal lattice can be dramatically enhanced due to involvement emission process bounds states continuum. These high‐Q resonances allow achieve resonant peaks...
We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been nominal Si(001) substrate solid-source molecular beam epitaxy. Such possessed rather good crystalline quality and smooth surface so provided subsequent growth high-quality A3B5 structure. operation demonstrated under electrical pumping at 77 K in continuous wave mode room temperature pulsed mode. emission...
Abstract Room temperature lateral p + –i–n light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures Ge(Si) self-assembled islands and their optical properties investigated. The use of preliminary amorphization solid phase epitaxy implanted n contact regions made it possible to reduce impurity activation from 800 °С–1100 °С 600 °С, which corresponds growth islands. This resulted a significant reduction detrimental effect high-temperature...
Antimony segregation in Ge(001) films grown by molecular beam epitaxy was studied. A quantitative dependence of the Sb ratio Ge on growth temperature revealed experimentally and modeled theoretically taking into account both terrace-mediated step-edge-mediated mechanisms. nearly 5-orders-of-magnitude increase a relatively small range 180–350 °C obtained, which allowed to form Ge:Sb doped layers with abrupt boundaries high crystalline quality using switching method that proposed earlier for...
Luminescent properties of self-assembled Ge(Si)/SOI nanoislands embedded in two-dimensional photonic crystal (PhC) slabs with and without L3 cavities were studied PhC period a varied between 350 600 nm. For small periods (a ≤ 450 nm), the nanoisland luminescence, which spans over wavelength range from 1.2 to 1.6 μm, overlaps bandgap resulting coupling localized modes an cavity. It is shown that for larger > emission couples radiative above located vicinity Г-point Brillouin zone...
The study of light-emitting defects in silicon created by ion implantation has gained renewed interest with the development quantum optical devices. Improving techniques for creating and optimizing these remains a major focus. This work presents comprehensive analysis photoluminescence line at wavelength 1240 nm (1 eV) caused arising from irradiation SiO2/Si system subsequent thermal annealing. It is assumed that this emission due to formation defect complexes WM trigonal symmetry similar...
Bound states in the continuum (BIC) have attracted a great deal of attention all-dielectric nanophotonics due to their ability provide spectral features with very high-quality factor. By definition, BIC cannot be observed far field because symmetry mismatch modes propagating free space. Despite this, systems slightly reduced symmetry, condition for is lifted, which gives rise resonant optical response. In particular, photonic crystal slabs, support states, reduction allows modification light...
An original approach to selective doping of Si by antimony (Sb) in molecular beam epitaxy (MBE) is proposed and verified experimentally. This based on controllable utilization the effect Sb segregation. In particular, sharp dependence segregation growth temperature range 300–550 °C exploited. The variations between kinetically limited maximum regimes are suggested be utilized order obtain selectively doped structures with abrupt profiles. It demonstrated that technique allows formation Si:Sb...
In this work we report, to the best of our knowledge, first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD silicon with an intermediate MBE-grown Ge buffer. Microlasers InGaAs/GaAs active region were tested at room temperature. Under pulsed injection, lasing is achieved in microlasers diameters 23, 27, and 31 µm a minimal threshold current density 28 kA/cm2. Lasing spectrum...
Detailed studies of the luminescent properties Si-based 2D photonic crystal (PhC) slabs with air holes various depths are reported. Ge self-assembled quantum dots served as an internal light source. It was obtained that changing hole depth is a powerful tool which allows tuning optical PhC. shown increasing in PhC has complex influences on its overall photoluminescence (PL) response due to simultaneous counteracting factors. As result, maximal increase PL signal more than two orders...
The results of the study effect strained SiGe layers on critical thickness two-dimensional growth Ge layer in different SiGe/Si(001) structures are presented. A significant influence buried has been found out, which remains considerable even for capped by unstrained Si up to 3.5 nm. experimental well described proposed model, where obtained features explained means introducing a phenomenological parameter called “effective decay length” strain energy accumulated structure.
The impact of the size distributions Ge islands on structural and optical characteristics anti-reflection structures was investigated. variation island distribution achieved through growth temperature in gas-source molecular beam epitaxy at 700 °C–800 °C. were utilized as etching masks to form structures. By using lower °C subsequent etching, larger texture without many hollows formed contrast that 800 Broader found lead size. Smaller is by smaller short whereas erosion during long etching....
An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The current layer generated by excitation magnetization precession during ferromagnetic resonance a thin permalloy (Py) deposited Si doped phosphor and From angular dependences dc voltage for different Py/n-Si:Bi structures aligned along [011] or [100] crystal axes, we able to distinguish planar (PHE) ISHE contributions. signal...