A5074236065- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Electronic and Structural Properties of Oxides
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Shape Memory Alloy Transformations
- Ultrasonics and Acoustic Wave Propagation
- Acoustic Wave Resonator Technologies
- Magnesium Oxide Properties and Applications
- Magnetic Properties and Applications
- Microstructure and Mechanical Properties of Steels
- Inorganic Fluorides and Related Compounds
Ioffe Institute
2016-2025
National University of Science and Technology
2022-2023
ITMO University
2016
Homoepitaxial β‐Ga 2 O 3 films grown by mist‐chemical vapor deposition technique utilizing Ni mask as a buffer interlayer are studied. The successfully on (100) and (01) oriented gallium oxide substrates upon with subsequent formation of sub‐micron‐island mask. thicknesses the Ni/β‐Ga estimated 4 1.5 μm, respectively. Ni/(01) wafers have relatively high crystal perfection, while Ni/() characterized growth rate. Although proposed approach deteriorates surface morphology crystallinity...
Abstract Films of α -Ga 2 O 3 (Sn) grown by halide vapor phase epitaxy on sapphire with donor densities in the range 5 × 10 15 –8.4 19 cm −3 were irradiated at 25 °C 1.1 MeV protons to fluences from 13 16 −2 . For lowest doped samples, carrier removal rate was ∼35 −1 14 and ∼1.3 for proton fluence. The observed could be accounted introduction deep acceptors optical ionization energies eV, 2.8 eV 3.1 eV. samples 4 18 , initial electron fluence ∼300 same photocapacitance spectra, but their...
Abstract Heavily Sn-doped films of α -Ga 2 O 3 were grown by halide vapor phase epitaxy (HVPE) on basal plane c-sapphire and (10-12) r-sapphire substrates with without -Cr thin buffers prepared magnetron sputtering annealing in air at 500 °C for h. For both substrate orientations, the use led to three major effects. The first was a substantial decrease half-width symmetric asymmetric x-ray reflections. second an order magnitude net donor concentration produced flowing same amounts Sn into...
Record thick (up to 100 μm) epitaxial layers of a prospective metastable semiconductor Ga 2 O 3 were grown by HVPE (Halide Vapor Phase Epitaxy) on GaN buffer c-sapphire substrates. The X-ray diffraction pattern the show that structure layer is pure kappa(ε)-Ga without any other phases. At same time, organization domain was observed, which manifests itself in form pseudohexagonal prisms retain orientation gallium nitride sublayer. Schottky diodes with nickel contacts fabricated and electrical...
Two-inch diameter α -Ga 2 O 3 films with thickness ∼4 μ m were grown on basal plane sapphire by Halide Vapor Phase Epitaxy (HVPE) and doped Sn in the top ∼1 from surface. These characterized High-Resolution X-ray Diffraction (HRXRD), Scanning Electron Microscope (SEM) imaging Secondary (SE) Micro-cathodoluminescence (MCL) modes, contactless sheet resistivity mapping, capacitance-voltage, current-voltage, admittance spectra, Deep Level Transient Spectroscopy (DLTS) measurements. The edge...
Corundum-structured chromium oxide (a-Cr2O3), exhibiting p-type conductivity, is a highly attractive candidate for forming high-quality p-n heterojunctions with a-Ga2O3. Two CVD growth techniques were employed in the fabrication of heterostructure. A ~ 0.2-micron a-Cr2O3 layer was grown on (0001) sapphire substrate using mist at 800 °C. It possesses high morphological homogeneity and low roughness, which acceptable further epitaxial processes. Subsequently, Sn-doped a-Ga2O3 thickness 1.5 µm...
Abstract Epitaxial layers of a new wide-band semiconductor (α-Ga_2O_3 doped with tin) have been grown by chloride epitaxy on smooth and patterned substrates, which are widely used to increase the emission yield in high-efficiency LED structures based InGaN, studied. The properties obtained gallium-oxide compared. Both types samples had n -type conductivity, but frequency voltage dependences their capacitance differed. Differences dislocation structure epitaxial α-Ga_2O_3 substrates...
Рассмотрена износостойкость эпитаксиальных слоев alpha- и beta-полиморфов оксида галлия, выращенных на сапфировых подложках. Это одно из первых исследований трибологических свойств перспективного широкозонного полупроводникового кристалла. В результате проведенных триботестов с участием сапфирового контртела в процессе сухого трения воздухе показано, что слои метастабильного alpha-Ga 2 O 3 более стойки к истиранию, чем термостабильной beta-фазы. При этом полученные величины коэффициентов...
AbstractThe reactive stresses induced in Ni_49Fe_18Ga_27Co_6-alloy single crystals during martensitic transformations with a limited possibility of shape-memory-strain recovery have been experimentally studied. The data on these are compared the results obtained previously for Cu–Al–Ni, Ni–Ti, and Ni‒Fe–Ga crystals. potential application Ni_49Fe_18Ga_27Co_6 designing drives power motors is demonstrated.