A5029213458- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- Luminescence Properties of Advanced Materials
- Ion-surface interactions and analysis
- Radiation Detection and Scintillator Technologies
- Fusion materials and technologies
- Semiconductor Quantum Structures and Devices
- Nuclear Materials and Properties
- Photocathodes and Microchannel Plates
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Radiation Effects in Electronics
- Glass properties and applications
- Silicon Carbide Semiconductor Technologies
- Diamond and Carbon-based Materials Research
- Electronic and Structural Properties of Oxides
- Hydrogen embrittlement and corrosion behaviors in metals
- Transition Metal Oxide Nanomaterials
- Terahertz technology and applications
- Particle Detector Development and Performance
National University of Science and Technology
2016-2025
Frumkin Institute of Physical Chemistry and Electrochemistry
2016-2025
National University of Science and Technology
2015-2024
Candid
2022
Saint Petersburg Mining University
2022
Iron Ore Company (Canada)
2022
University of Florida
2018-2021
Institute for Theoretical and Experimental Physics
2018-2021
Kurchatov Institute
2021
Korea University
2018-2021
Silicon nanopowders with nitrogen heterocyclic carbene (NHC) and butyl as stabilizing ligands were synthesized by bottom up chemical methods. Transmission electron microscopy (TEM) was used to obtain nanoparticle size distribution 1.8–2.5 mm average diameter. Optical characteristics (photoluminescence infrared (IR) absorption spectra) of samples investigated fabricated on different steps irradiation high-energy 22.5-MeV protons. The photoluminescence (PL) spectral changes are slightly for...
Hole traps in hydride vapor phase epitaxy β-Ga2O3 films were studied by deep level transient spectroscopy with electrical and optical excitation (DLTS ODLTS) photocapacitance temperature dependence measurements. Irradiation 20 MeV protons creates electron hole traps, a strong increase photocapacitance, prominent persistent that partly persists above room temperature. Three hole-trap-like signals H1 [self-trapped holes (STH)], H2 [electron capture barrier (ECB)], H3, activation energies 0.2...
Carrier removal rates and electron hole trap densities in β-Ga2O3 films grown by hydride vapor phase epitaxy (HVPE) irradiated with 18 MeV α-particles 20 protons were measured compared to the results of modeling. The for proton α-radiation found be close theoretical production vacancies, whereas concentrations major traps much lower, suggesting that main process responsible carrier is formation neutral complexes between vacancies shallow donors. There a concurrent decrease diffusion length...
We investigate the changes in structural and optical properties of perovskite crystals induced by e-beam irradiation with high flux (10 15 electrons per cm 2 , energy 5 MeV) an extremely dose (25 MRAD). The result clearly shows that MAPbBr are stable for applications.
The electrical properties and deep trap spectra of semi-insulating Ga2O3(Fe) implanted with Si ions subsequently annealed at 1000 °C were investigated. A significant discrepancy was observed between the measured shallow donor concentration profile predicted by Stopping Power Range Ions in Matter simulations, indicating substantial compensation. Deep level transient spectroscopy revealed presence acceptors Ec −0.5 eV a ∼10¹⁷ cm−³, insufficient to fully account for Photocapacitance identified...
The effects of pulsed neutron irradiation on Si doped n-type β-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) bulk Sn n+ substrates are reported. This leads to an almost linear increase the density deep electron traps E2* (Ec-0.74 eV), E3 (Ec-1.05 and E4 (Ec-1.2 with introduction rate close 0.4-0.6 cm-1 while E2 (Ec-0.8 eV) related Fe was virtually unchanged. In addition, in optical ionization threshold 1.3 eV, 2.3 3.1 eV 0.8-2 observed. carrier removal under our conditions 28 cm-1....
Films of α-Ga2O3 grown by Halide Vapor Phase Epitaxy (HVPE) were irradiated with protons at energies 330, 400, and 460 keV fluences 6 × 1015 cm−2 7 MeV C4+ ions a fluence 1.3 1013 characterized suite measurements, including Photoinduced Transient Current Spectroscopy (PICTS), Thermally Stimulated (TSC), Microcathodoluminescence (MCL), Capacitance–frequency (C–f), photocapacitance Admittance (AS), as well Positron Annihilation (PAS). Proton irradiation creates conducting layer near the peak...
Abstract Films of α -Ga 2 O 3 (Sn) grown by halide vapor phase epitaxy on sapphire with donor densities in the range 5 × 10 15 –8.4 19 cm −3 were irradiated at 25 °C 1.1 MeV protons to fluences from 13 16 −2 . For lowest doped samples, carrier removal rate was ∼35 −1 14 and ∼1.3 for proton fluence. The observed could be accounted introduction deep acceptors optical ionization energies eV, 2.8 eV 3.1 eV. samples 4 18 , initial electron fluence ∼300 same photocapacitance spectra, but their...
p-NiO/n-Ga
The role of Shockley-Read-Hall non-radiative recombination centers on electroluminescence (EL) efficiency in blue multi-quantum-well (MQW) 436 nm GaN/InGaN light emitting diodes (LEDs) was examined by controlled introduction point defects through 6 MeV electron irradiation. decrease the EL LEDs subjected to irradiation with fluences above 5 × 1015 cm−2 closely correlated increase concentration Ec-0.7 eV traps active MQW region. This trap density accompanied an both diode series resistance...
The stable beta polymorph Ga 2 O 3 was converted to gamma by ion irradiation. current–voltage characteristics show the is much more rad-hard.
Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence underlayer (UL) consisting InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs previously shown to dramatically improve internal efficiency LEDs, via a decrease density deep traps responsible for nonradiative recombination QW region. main differences between samples and without UL (a) higher compensation Mg acceptors p-GaN:Mg contact layer sample...
Changes induced by irradiation with 1.1 MeV protons in the transport properties and deep trap spectra of thick (>80 μm) undoped κ-Ga2O3 layers grown on sapphire are reported. Prior to irradiation, films had a donor concentration ∼1015 cm−3, two dominant donors having ionization energies 0.25 0.15 eV, respectively. The main electron traps were located at Ec−0.7 eV. Deep acceptor measured capacitance-voltage profiling under illumination showed optical thresholds near 2, 2.8, 3.4...
Radiation processing technologies for static and dynamic parameters modification of silicon bipolar semiconductor devices implemented. Devices different classes with wide range operating currents (from a few mA to tens kA) voltages volts 8 kV) were processed in large scale including power diodes thyristors, high-frequency IGBT transistors, fast recovery diodes, pulsed switching precise temperature- compensated Zener (in general more than fifty 50 device types), produced by enterprises. The...
The effects of 20 MeV proton irradiation with fluences 5 × 1014 and 1015 p/cm2 on electrical properties lightly Sn doped n-type (net donor concentration 3 1017 cm−3) bulk β-Ga2O3 samples (010) (−201) orientation were studied. Proton decreases the net density a removal rate close to 200 cm−1 for both orientations similar electron rates in Si epilayers. main deep traps introduced crystals are near Ec−0.45 eV, while films, dominant centers so-called E2* (Ec−0.75 eV) E3 (Ec−0.1 traps. Deep...
The changes of electrical properties and deep trap spectra induced in n-type β-Ga2O3 by 1 GeV protons with a fluence 4 × 1013 cm−2 were studied. carrier removal rates ∼100 cm−1 at this energy. For comparison, for 20 MeV proton irradiation comparable fluences (5–10 1014 cm−2), the rate was ∼400 donor concentrations 3 1016 cm−3 <1016 cm−3. These stark contrast modeling results that predicted introduction vacancies to be two orders magnitude higher protons. Measurements electron hole...
Irradiation with 6 MeV electrons of near‐UV (peak wavelength 385–390 nm) multi‐quantum‐well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density deep electron traps near E c −0.8 and −1 eV, correlates to a 90% decrease electroluminescence (EL) efficiency after fluence 1.1 × 10 16 cm −2 . The likely origin the EL is this concentration eV traps.
Deep electron and hole trap spectra electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before after 6 MeV irradiation. Starting with a fluence 5 × 1015 cm−2, irradiation increased the concentration existing traps levels at Ec−0.5 eV introduced new near Ec−1 eV. The latter are well known radiation defects formed in GaN barriers MQW region. degradation EL correlates changes density, suggesting these effective non-radiative...
The spatial distribution of deep traps in electron irradiated green multi-quantum-well (MQW) GaN/InGaN light emitting diodes was determined by level transient spectroscopy with electrical and optical injection. Four major levels near Ec-0.2 eV, Ec-0.5 Ec-0.75 Ec-1.1 eV were observed. concentration all increased fluence 6 MeV electrons, correlating a decrease the external quantum efficiency (EQE) LEDs. hole at Ev+0.45 also irradiation. observed EQE changes are partly attributed to trapping...
Electron accelerator equipped with injection system and magnetic buncher to generate picoseconds pulsed beams (50 ps, 150 A, 10 MeV) prospective for radiation hardness investigation detectors characterization is represented.
Different proton irradiation regimes were tested to provide more than 20 kHz-frequency, soft reverse recovery "snap-less" behavior, low forward voltage drop and leakage current for 50 mm diameter 7 kA/400 V welding diode Al/Si/Mo structure. Silicon with such parameters is very suitable high frequency resistance machines of new generation robotic welding.