A5012588832- Ion-surface interactions and analysis
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Advanced Photocatalysis Techniques
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- Nanopore and Nanochannel Transport Studies
- Advanced Surface Polishing Techniques
- Electronic and Structural Properties of Oxides
- Atomic and Subatomic Physics Research
- Nanowire Synthesis and Applications
- Carbon Nanotubes in Composites
- High-pressure geophysics and materials
- Thin-Film Transistor Technologies
Peter the Great St. Petersburg Polytechnic University
2011-2024
Ioffe Institute
2016-2020
Oceanpribor (Russia)
2020
Polytechnic University
2010
Ion irradiation is a powerful tool to tune properties of semiconductors and, in particular, gallium oxide (Ga2O3) which promising ultra-wide bandgap semiconductor exhibiting phase instability for high enough strain/disorder levels. In the present paper we observed an interesting interplay between disorder and strain monoclinic \b{eta}-Ga2O3 single crystals by comparing atomic cluster ion irradiations as well ions co-implants. The results obtained combination channeling technique, x-ray...
The rhombohedral phase of gallium oxide (α-Ga2O3) is interest because its highest bandgap among the rest Ga2O3 polymorphs, making it particularly attractive in applications. However, even though ion beam processing routinely used device technology, understanding radiation phenomena α-Ga2O3 not mature. Here, we study non-linear effects for disorder formation by varying both defect generation rate and density collision cascades, enabled comparing monoatomic cluster implants, also applying...
The effects of irradiation by F, P, and PF4 on optical properties GaN were studied experimentally atomistic simulations. Additionally, the effect Ag was simulation. energy 0.6 keV/amu for all projectiles. measured photoluminescence (PL) decay time found to be decreasing faster when done molecular ion compared light irradiation. PL change is connected with types defect produced different Simulation results show that ions mainly produce isolated point defects while heavy clusters defects....