A5025098511- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Semiconductor Quantum Structures and Devices
- Spectroscopy and Laser Applications
- Laser Design and Applications
- Atmospheric Ozone and Climate
- Photonic Crystals and Applications
- Material Properties and Applications
- Advanced Fiber Laser Technologies
- Advanced Semiconductor Detectors and Materials
- Atmospheric and Environmental Gas Dynamics
- Quantum optics and atomic interactions
- Quantum Dots Synthesis And Properties
- Molecular Junctions and Nanostructures
- Atomic and Subatomic Physics Research
- Cold Atom Physics and Bose-Einstein Condensates
- Material Properties and Failure Mechanisms
- Solid State Laser Technologies
- Intermetallics and Advanced Alloy Properties
- Optical properties and cooling technologies in crystalline materials
- Optical Network Technologies
- Surface Treatment and Coatings
- Optical Coherence Tomography Applications
- Semiconductor materials and devices
- Terahertz technology and applications
ITMO University
2016-2025
Ioffe Institute
2014-2023
National Research University Higher School of Economics
2022-2023
Weatherford College
2022
St Petersburg University
2013-2020
Russian Academy of Sciences
2003-2014
Saint Petersburg Academic University
2010-2014
Physico-Technical Institute
2003-2013
National University of Science and Technology
1963
We report on GaAs-based broad area (100 µm) 1.3 µm quantum dot (QD) lasers with high CW output power (5 W) and wall-plug efficiency (56%). The reliability of the devices has been demonstrated beyond 3000 h operation at 0.9 W 40 °C heat sink temperature 2% degradation in performance. P-doped QD a temperature-insensitive threshold current (T0 > 650 K) differential (T1 = infinity) up to 80 have realized.
Single-mode long-wavelength (LW) vertical-cavity surface-emitting lasers (VCSELs) present an inexpensive alternative to DFB-lasers for data communication in next-generation giga centers, where optical links with large transmission distances are required. Narrow wavelength-division multiplexing systems demand bit rates and single longitudinal transverse modes. Spatial division through multicore fibers using LW VCSELs is enabling still larger-scale center networks. This review discusses the...
High power single-mode wafer fused 1550 nm VCSELs with an active region based on InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular-beam epita oy. The current confinements provided a lateral-structured buried tunnel junction <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim ~6~\mu \text{m}$...
This paper presents data on wafer-fused 1550-nm vertical-cavity surface-emitting lasers (VCSELs) based the active region and distributed Bragg reflectors (DBRs) grown by molecular beam epitaxy. VCSELs with a tunnel junction aperture diameter of 8 μm show lasing at threshold current density j <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> <; 3 kA/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , an output optical power ~4 mW,...
High power single mode wafer-fused 1300-nm VCSELs with a gain region based on InGaAs/InAlGaAs short period superlattice are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular beam epitaõy. The current confinement is provided lateral-structured buried tunnel junction etching depth of <inline-formula> <tex-math notation="LaTeX">$\sim 25$ </tex-math></inline-formula> nm. It shown that optimal diameter the for...
Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and double wafer‐fusion technique. Lasers buried tunnel junction diameter of 5 μm have shown single‐mode CW operation output optical power ∼6 mW at 20°C. Opened eye diagrams observed up to 10 Gbps.
We report on 1.33 µm quantum dot (QD) lasers grown GaAs substrates that show a modal gain of 45 cm−1, low threshold current density 150 A cm−2 and room-temperature continuous wave output power 2.5 W. The active region is based ten InAs/InGaAs/GaAs layers formed by activated phase separation. High structural quality the achieved, owing to minimization total amount strained material per QD layer. optical confinement factor increased exploiting high Al composition (80%) in cladding layers. over...
Molecular beam epitaxy-grown 0.98-mum vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> As-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the...
We report on 980nm InGaAs∕AlGaAs lasers with a broad waveguide based longitudinal photonic band crystal concept. The beam divergence measured as full width at half maximum was narrow &lt;5° (vertical). Broad area 100μm multimode devices demonstrated &gt;15W pulsed operation limited by the current source. Significantly increased modal spot size enabled stable single lateral mode in ridge 10μm stripes. Maximum continuous wave power regime of 1.3W for wide stripe obtained, being...
Single mode (SM) 850 nm vertical-cavity surface-emitting lasers (VCSELs) are suitable for error-free (bit error ratio <10<sup>-12</sup>) data transmission at 17-25 Gb/s distances ~2-0.6 km over 50μm-core multimode fiber (MMF). Reduced chromatic dispersion due to ultralow chirp of SM VCSELs under high speed modulation (up 40 Gb/s) responsible the dramatic length extension. Good coupling tolerances devices MMF manifest their applicability low cost optical interconnects. As higher...
Abstract Ridge quantum-cascade lasers emitting at a wavelength near 8 μm are fabricated and studied. Lasing room temperature with maximum output peak power exceeding 1 W from one facet is demonstrated.
We have designed, fabricated and measured the performance of two types edge emitting lasers with unconventional waveguides lateral arrays thereof. Both designs provide high power low divergence in fast slow axis, hence an increased brightness. The devices are extremely promising for new laser systems required many scientific commercial applications. In first approach we use a broad photonic crystal waveguide embedded higher order mode filter, allowing us to expand ground across entire...
We report on edge-emitting lasers based the 1- and 2-D longitudinal photonic bandgap crystal concept. The (PBC) design allows a robust controllable extension of fundamental mode over thick multilayer waveguide to obtain very large vertical spot size narrow beam divergence.
Multimode 850 nm vertical cavity surface-emitting lasers (VCSELs) suitable for high bit rate operation are studied. VCSELs with oxide aperture diameters of 5–7 µm show a −3 dB modulation bandwidth (∼20 GHz) and D-factor (∼ 8 GHz mA−1/2). To allow low capacitance multiple layer oxide-confined design was applied. Eye diagrams clearly open up to 35 Gbit s−1 at the temperature 25 °C. Using diameter PIN photodiodes 6 error-free (defined as error ration ≤1 × 10−12) optical fiber communication...
We address the design and performance issues of 640-nm range GaInP-AlGaInP laser diodes based on a longitudinal photonic bandgap crystal (PBC). The all-epitaxial is selective filtering high-order modes allows extending fundamental mode over PBC waveguide achieving very large vertical modal spot size. At same time robustness narrow far-field beam divergence remarkably high with respect to layer thickness variations. Optimal ensures that all optical show absolute values leakage loss (> 30...