Herein, a comprehensive study of large‐sized (8 × 8 0.45 mm 3 ) multisectoral boron‐doped single‐crystal diamond plate grown by high‐pressure high‐temperature method is presented. For the first time, electrochemical capacitance–voltage (ECV) technique used to assess free charge carrier concentration in diamond. Due absence metal contacts and non‐etching during profiling, ECV measurements are performed nondestructive mode, can be further for device manufacturing. The registered on average 1...

The doping densities in n-InAs structures were studied by means of capacitance- voltage technique using electrolyte to form Schottky-like contact. It was shown that heavily doped InAs (> 1018 cm-3) the depletion approximation can be used obtain true concentration. Concentration low estimated simulation (using modified Thomas-Fermi approximation). Measured compared with concentration obtained Hall measurements. difference between CV and results undoped samples explained.

The possibility of creating an upper junction multijunction III–V/Si solar cells based on GaP/Si superlattices (SL), grown using a combination plasma-enhanced atomic-layer deposition (PEALD) and chemical vapor (PECVD) technologies at temperature not exceeding 400 °C, is shown. Structural electrophysical studies SL were performed the photovoltaic properties them explored. obtained epitaxially silicon substrate has crystalline structure. According to electrochemical capacitance–voltage (ECV)...

Light-emitting heterostructures with single and multiple GaAs/InGaAs quantum wells have been investigated by means of electrochemical capacitance-voltage (ECV) profiling. Capacitance-voltage characteristics were measured; concentration profiles free charge carriers over the heterostructure depth as well intensity filling obtained. In a (QW), we considered limitations capacitance techniques for undoped QW profiling, which are situated near metallurgic border p-n junction. We made detailed...

In pHEMT devices, a two dimensional (2D) conducting channel representing quantum well (QW) and adjacent layers of wide-gap semiconductors are fabricated on an undoped material which provides high mobility free carriers in the channel. During development structures it is always very important to estimate control charge concentration, that not trivial task because its redistribution causes changing electric field distribution and, respectively, energy spectrum states 2DEG By using modern ECV...

The properties of interfaces in the heterostructures which frequently govern their operation are particular importance for devices containing as active elements. Any further improving characteristics semiconductor is impossible without a detail analysis processes occurring at heterojunctions. At same time, results largely depend on purity starting materials and technology layer manufacturing. Moreover, requirements to composition distribution impurity steadily get stringent. Therefore,...

Gallium phosphide substrate structures with different crystallographic orientation and degree of doping have been studied by means electrochemical capacitance-voltage (ECV) profiling. A brief description the ECV profiling as well its advantages over conventional technique are given. The measurement modes for GaP has worked out, necessary electrolyte meets requirement polishing character during etching samples selected. During experiment, current-voltage characteristics were measured, which...

AlGaAs/InGaAs/GaAs and AlGaN/GaN HEMT heterostructures were investigated by means of electrochemical capacitance-voltage technique. A set test structures fabricated using various doping techniques: standard doping, δ-doping GaAs pHEMT nondoping GaN HEMT. The concentration profiles free charge carriers across the samples experimentally obtained. QW filling was analyzed compared for different mechanisms emitter 2DEG origins.

The capability of plasma‐enhanced atomic layer deposition (PE‐ALD) for the formation GaP nucleation layers on Si substrates further epitaxial growth is explored. possibility by metalorganic vapor phase epitaxy (MOVPE) templates prepared PE‐ALD GaP/Si demonstrated. structural and electronic properties interfaces between substrate as well their thermal stability are studied. Initially, structures obtained without additional hydrogen plasma exhibit better photoelectric compared with that...

The paper presents the results of electrochemical capacitance-voltage profiling and simulation quantum-sized semiconductor structures with quantum wells delta-doped layers based on gallium arsenide. experimental ECV data were obtained by superposition measured characteristics during gradual etching nanostructure. As a result simulation, concentration distribution energy lineups for delta-layers in arsenide calculated. are qualitative agreement found literature.

We analyzed charge carrier concentration distribution and electron spectra of the AlGaAs/In0.22Ga0.78As/GaAs quantum well pHEMT structures using experimental methods (photoluminescence electrochemical capacitance-voltage profiling) coupled with a numerical simulation. The results PL simulation ECV free distributions for wells are presented. Based on results, we suggest optimized heterostructures in order to obtain higher localization occupation states. Particularly, optimization spacer donor...

Boron implanted Si structures used in back-side illuminated and electron bombarded charge coupled devices (CCD) were investigated by means of electrochemical capacitance- voltage (ECV) profiling. A set test specially fabricated using various energies doses boron implantation, as well different materials their coating layers: Al silicon oxide. The concentration profiles free carriers across the sample experimentally obtained. Further, Poisson equation Fredholm first kind distribution carrier...

We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode sample and electrochemical profiling, electron accumulation were detected in layer so existence is confirmed. Results admittance spectroscopy deep-level transient showed defect formation GaP layers above energy position Ec-0.21 eV, 0.30 eV 0.93 eV. Keywords: well, profiling.

AlGaAs/InGaAs/GaAs pHEMT heterostructures were investigated by means of electrochemical capacitance-voltage (ECV) and photoluminescence (PL) techniques coupled with a numerical simulation. A set GaAs structures was fabricated using various doping techniques: modulated δ-doping. The results the PL spectra simulation ECV free charge carrier distributions for are presented. analysis comparison QW filling in case different mechanism donor layer done. Based on obtained results, we suggest...

The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs delta-doped layer used as active layers for fabrication 4-18 GHz transistors. As the techniques, electrochemical capacitance-voltage (ECV) profiling other methods admittance spectroscopy are applied. Modernization commercial ECV-profiling setup allows observing first time concentration peak from a near-surface delta-layer together enrichment well. In order to optimize...

We study the doping in GaP layers grown on n-type silicon wafer by time-modulated plasma-enhanced chemical vapour deposition with additional flow of silane. Classical and electrochemical (ECV) capacitance-voltage methods were performed GaP/Si heterostructures they demonstrate high electron concentration layer similar profiles. In addition, glow-discharge optical emission spectroscopy revealed content GaP, which should be responsible for detected doping.