A5040064153- Semiconductor Quantum Structures and Devices
- Semiconductor Lasers and Optical Devices
- Quantum and electron transport phenomena
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Quantum Dots Synthesis And Properties
- Photonic and Optical Devices
- Chalcogenide Semiconductor Thin Films
- Advanced materials and composites
- Advanced Semiconductor Detectors and Materials
- Magnetic properties of thin films
- Neuropeptides and Animal Physiology
- GaN-based semiconductor devices and materials
- Material Properties and Applications
- Advanced ceramic materials synthesis
- Receptor Mechanisms and Signaling
- Electronic and Structural Properties of Oxides
- Surface Treatment and Coatings
- Tribology and Wear Analysis
- Industrial Engineering and Technologies
- Ion-surface interactions and analysis
- Material Science and Thermodynamics
- Diamond and Carbon-based Materials Research
- Innovations in Concrete and Construction Materials
- Magnetic and transport properties of perovskites and related materials
Osipyan Institute of Solid State Physics RAS
2008-2024
Belgorod State Technological University
2014-2024
Russian Academy of Sciences
1999-2023
Moscow Automobile and Road Construction State Technical University
2023
Georgi Nadjakov Institute of Solid State Physics
2023
Lomonosov Moscow State University
1991-2022
Moscow State Academy of Veterinary Medicine and Biotechnology named after Skryabin
2016
Russian Quantum Center
2016
Voronezh State University
2011-2012
Altai State Medical University
2010
Alternate short-period GaAs-InAs deposition following InAs pyramid formation on a GaAs (100) surface leads to the creation of vertically split pyramids. This splitting is driven by energetics Stranski-Krastanow growth mode. The strain energy reduced due successive transfer from buried part uncovered part. resulting arrangement represents laterally ordered array nanoscale structures inserted in matrix, where each structure composed several merging parts. Results optical studies demonstrate...
The range of negative characteristic temperatures in temperature dependences threshold current density low-threshold (In, Ga)As/(Al, Ga)As quantum dot injection lasers has been observed. A model describing the decrease with at low is proposed.
Integration of magnetism into semiconductor electronics would facilitate an all-in-one-chip computer. Ferromagnet/bulk hybrids have been, so far, mainly considered as key devices to read out the ferromagnetism by means spin injection. Here we demonstrate that a Mn-based ferromagnetic layer acts orientation-dependent separator for carrier spins confined in quantum well is set apart from ferromagnet barrier only few nanometers thick. By this spin-separation effect, non-equilibrium...
Optical single dot studies in wide-band gap diluted magnetic CdSe/ZnMnSe quantum dots have been performed. Due to the sample design, photoluminescence energy of signal is energetically below internal Mn2+ transition, resulting high efficiencies comparable nonmagnetic CdSe/ZnSe dots. Magnetic-field- and temperature-dependent measurements on individual clearly demonstrate exchange interaction between excitons ions, a giant Zeeman effect formation quasi-zero-dimensional polarons.
Light-emitting device heterostructures with a δ⟨Mn⟩-doped layer inserted between the Schottky contact and near-surface InGaAs/GaAs quantum well (QW) have been fabricated. The facilitates hole tunnelling from to QW impedes that of electrons in opposite direction. It leads highly enhanced electroluminescence signal InGaAs QW. An effective p–d exchange interaction holes magnetic moments Mn ions is found strongly enhance g-factor circular polarization low (∼2 K) temperature emission up 20% fields 1–2 T.
Time-resolved and cw photoluminescence (PL) spectra are studied in type-II ZnSe/BeTe multiple quantum wells. Samples with nonequivalent interfaces exhibit a strong in-plane linear polarization of the PL along $〈110〉$ axis. The is stable respect to an increase excitation intensity by many orders magnitude, raising temperature up 300 K not influenced applied electric or magnetic fields. experimental data discussed framework tight-binding model taking into account band alignment lack common...
The spin orientation of electrons is studied in ferromagnet (FM)–semiconductor (SC) hybrid structures composed a (Ga,Mn)As ferromagnetic layer, which placed the direct vicinity non‐magnetic SC quantum well (QW). It shown that polarization carriers QW achieved by spin‐dependent tunnelling into magnetized layer. This leads to dynamical electrons, can be directly observed means time‐resolved photoluminescence. We find electron grows time after excitation with an optical pulse and may reach...
Self-organized InAs quantum dots inserted in an (In, Ga)As matrix lattice matched to InP substrate were used as active region of injection laser. Low threshold (11 A/cm 2 ) lasing at 1.9 nm (77 K) via the dot states was realized. Temperature dependencies main laser parameters demonstrate important role nonradiative recombination. An analysis basic mechanisms leakage shows that Auger recombination share is negligible.
Magneto-optics of heterostructures with an InGaAs/GaAs quantum well (QW) and a 3–5 nm spaced ultra-thin ferromagnetic δ-layer Mn in the GaAs barrier is investigated detail. While nonmagnetic structures demonstrate very low degree circular polarization PC QW photoluminescence, existence close gives rise to high values even above its Curie temperature TC ∼ 35 K. Fast growth Zeeman splitting emission band, observed at B < 0.2 T, followed by slow linear increase > 0.5 T strictly...
Introduction. One of the promising modern methods coating formation is detonation gas dynamic sputtering. Coatings obtained by this method have high adhesion to substrate, dense structure and specified functional properties. Development technology for obtaining coatings with emission coefficient in infrared range an urgent need development high-temperature industrial processes technologies. High-temperature consume a large amount energy, so improving energy efficiency equipment considered as...
We report results of a detailed investigation type-II superlattices under high density photoexcitation. A strong spectral shift (≈0.5 eV) the recombination band corresponding to indirect transition from ZnSe conduction BeTe valence in ZnSe/BeTe with increasing carrier has been found at T=300 K. The dynamical characteristics this are studied by time-resolved spectroscopy. model which accounts for dependence bending and lifetimes spatially separated electrons holes on concentration...
The authors demonstrate efficient hole spin injection from a ferromagnetic metal (Ni) contact in forward biased light emitting Schottky diode (LESD) fabricated on GaAs based heterostructure with quantum well (QW). polarization of the injected holes was detected by measuring circular electroluminescence (EL) near surface InGaAs∕GaAs QW. An intermediate gold layer has been used order to improve efficiency. Over 40% degree EL observed at T=2K for LESD structure Au–Ni–Au contact.