A5053405544- 2D Materials and Applications
- Graphene research and applications
- Advanced Memory and Neural Computing
- Nanowire Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- ZnO doping and properties
- Semiconductor materials and devices
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Neural Networks and Reservoir Computing
- CCD and CMOS Imaging Sensors
- Electronic and Structural Properties of Oxides
- Plasmonic and Surface Plasmon Research
- Silicon Carbide Semiconductor Technologies
- Thermal Radiation and Cooling Technologies
- Acoustic Wave Resonator Technologies
- Advanced Sensor and Energy Harvesting Materials
Xidian University
2020-2023
Abstract There has been a growing interest in electronic and optoelectronic devices based on heterostructures between atomically thin 2D 3D semiconductor materials. This paper proposes molybdenum disulfide (MoS 2 )/3D germanium (Ge) junction field‐effect transistor (JFET). Typical electrical characteristics of the JFET are observed, with low subthreshold swing ≈88 mV/dec high on/off ratio ≈10 5 . The device exhibits bidirection photoresponse which photocurrent polarity is reversed depending...
The heterostructures between atomically thin 2-D and 3-D semiconductors show great potential for high-performance photodetector. In this work, the efficient light detection of p-n p-p+ black phosphorus (bP)/germanium (Ge) heterojunction photodiode has been demonstrated. With change Ge doping type, rectification direction diode formed by bP could be reversed. Due to enhanced photocarrier separation at reverse bias, bP/n-Ge (bP/p-Ge) device a responsivity 6.08 (3.43) A/W under 1550-nm...
Optoelectronic synapses integrating sensing–memory–processing functions have great advantages in neuromorphic computing for visual information processing and complex learning, recognition, memory an energy‐efficient manner. Herein, a light‐induced bidirectional response is demonstrated the proposed WSe 2 /MoS junction field‐effect transistor (JFET) with extra Ge back gate. The JFET exhibits high responsivity detectivity owing to effective modulation by top dielectric gates. unique...
Electronic and optoelectronic devices based on two-dimensional (2D)/three-dimensional (3D) semiconductor heterostructures, combining their respective advantages, have attracted wide attention. In this work, we fabricate a mixed-dimensional GeSe/Ge heterojunction field effect transistor (HJFET), which combines high carrier mobility of 2D GeSe near-infrared detection 3D bulk Ge. A significant on/off ratio 5 × 102 transconductance 0.23 μS are obtained, indicating convincing gate control...
Abstract Better control of the channel is crucial to improve performance existing electron devices. A phototransistor with a specifically designed dual‐gate structure based on vertical van der Waals heterojunction WS 2 and MoS proposed. The top gate modulates carrier transport in at heterojunction, whereas back can simultaneously both regions located either side heterojunction. Therefore, rectification ratio /MoS be modified from approximately 1 above 10 4 . very low subthreshold swing 47 mV...
Ultraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical and day nighttime surveillance. Hybrid one-dimensional (1D) zero-dimensional (0D) materials are attractive for broadband-responsive since its unique charges transfer characteristics facile fabrication processes. Herein, a Si/ZnO nanowires/Ge quantum dots photodetector has been constructed via processes that combined electrospinning spin-coating...
Abstract Programmable devices can be easily switched between n‐type and p‐type by applying an electric field are promising candidates for simplifying the currently used fabrication process increasing programmable flexibility. This paper proposes a 2D WSe 2 /3D Ge heterojunction field‐effect transistor (JFET) with top metal‐insulator semiconductor gate. The JFETs realized based on one device structure; furthermore, JFET converted into vice versa under control of top‐gate voltages different...
In this paper, the n-type and p-type SiGe junctionless bulk FinFET (SiGe JL-FinFET) with a high Ge mole fraction (xF>0.8) was studied for characteristics of single device CMOS logic circuit using 3D numerical simulation. A comparison study between JL-FinFET Si under 1×1019 to 5×1019 doping concentrations. The exhibits 28% 9% enhancement hole electron mobility, thus saturation current, transconductance, intrinsic gain, delay are improved up 38%, 26%, 45% 27% in SiGe-based as compared Si-based...
This paper proposes a molybdenum disulfide (MoS2)/Germanium (Ge) heterojunction device with top gate composed of hexagonal boron nitride and graphene. First, the rectification direction is reversed, ratio modulated from 0.09 to 7.3 by varying voltage −20 20 V. Optoelectronic characterization reveals that photoresponsivity speed can improve several orders magnitude when graphene used as MoS2 contact electrode. There an ambipolar photoresponse behavior in which photocurrent polarity be...
Heterojunctions and multi-gated structures facilitate the fabrication of high-performance multifunctional transistors. Here, a WSe2/MoS2 heterojunction structure transistor with back gate two top gates is proposed. The controls carrier transport entire channel, independently control transports MoS2 or WSe2 channels. rectification direction device could be reversed, ratio modulated from 10−4 to 104 by changing back-gate voltage. In addition, an evident negative-differential transconductance...
Transition-metal dichalcogenide materials have attracted considerable attention due to their outstanding properties, and however, the carrier collection efficiency remains a major problem for achieving high-performance electronic optoelectronic devices. In this research, we compared transport properties of graphite Au in contact with MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (WS ) materials. The use drain–source electrodes...
Special flask-shaped Au grating-Ge nanowire arrays are used to improve the performance of a Ge photodetector in infrared optical communication band. The responsivity device with alternate reaches as high 0.75 and 0.62 A/W at 1310 1550 nm, respectively, indicating nearly 100% increment compared without grating structure. This enhancement is attributed excitation surface plasmon polaritons, which simultaneously enhance inter-band transition absorption internal photoemission carriers. Moreover,...
Recently, WS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> has been considered a promising photodetector material due to its benefits of atomic thickness, easily customized single-crystal van der Waals heterostructure, and efficient photon absorption. However, the photosensitivity obtained from is still unsatisfactory. Therefore, this article proposes -based high sensitivity field-effect transistor (FET) based on avalanche...
Self-assembled MnGe quantum dots (QDs) were grown on Si (001) substrates using molecular beam epitaxy with different growth temperatures and Ge deposition thicknesses to explore the interaction among Mn doping, deposition, formation of intermetallics, ferromagnetism QDs. With introduction atoms, QDs become large density significantly decreases due improvement in surface migration ability atoms. The temperature is one most important factors deciding whether intermetallic phases form between...
We propose an infrared-sensitive negative differential transconductance (NDT) phototransistor based on a graphene/WS 2 /Au double junction with SiO /Ge gate. By changing the drain bias, diverse field-effect characteristics can be achieved. Typical p-type and n-type behavior is obtained under positive respectively. And NDT observed in transfer curves bias. It believed to originate from competition between top bottom channel currents stepped layers of WS at different gate voltages. Moreover,...