A5040711071- Semiconductor materials and devices
- Digital Transformation in Industry
- Integrated Circuits and Semiconductor Failure Analysis
- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Quality and Safety in Healthcare
- Semiconductor materials and interfaces
- Health Education and Validation
- Astronomical Observations and Instrumentation
- GaN-based semiconductor devices and materials
- Social Representations and Identity
- Currency Recognition and Detection
- Advanced Optical Sensing Technologies
- Education during COVID-19 pandemic
- Big Data and Business Intelligence
- Flexible and Reconfigurable Manufacturing Systems
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Surface Polishing Techniques
- Economic and Technological Innovation
- Agricultural and Food Sciences
- Optical Wireless Communication Technologies
- Diamond and Carbon-based Materials Research
- Semiconductor Quantum Structures and Devices
- Advanced Machining and Optimization Techniques
- Analog and Mixed-Signal Circuit Design
Micron (United States)
2023
Universidade Federal do Rio Grande do Sul
2004-2010
Nizhny Novgorod State Pedagogical University
2007
Cloud, IoT, big data, and artificial intelligence are currently very present in the industrial academic areas, being drivers of technological revolution. Such concepts closely related to Industry 4.0, which can be defined as idea a flexible, technological, connected factory, encompassing shop floor itself its relationship between workers, chain supply, final products. Some studies have already been developed quantify company’s level maturity within scope 4.0. However, there is lack global...
Industry 4.0 considers the combinations of Internet Things, computing and communication infrastructure, sensors, artificial intelligence (AI) to provide predictive maintenance process optimization. These benefits are very relevant semiconductor industry, where high reliability low operating costs critical for a business' success. Analyzing state-of-the-art projects that present implementation fourth industrial revolution in companies, we noticed mainly two branches initiatives: (i) articles...
Design, fabrication and characterization of newly developed silicon multiple Position Sensitive photo Detector (PSD) that employ the planar technology single ion implantation are described. Shallow low-doped p-n junctions formed by boron in n-type substrate. The position characteristics PSD symmetric to zero-signal point linear entire active region. A sensitivity 12.5 mVcm-1µW-1 was measured.
Ion implantation is an essential process for production of modern III-V compound semiconductor devices and circuits has been proven as a successful method to convert conductive layer into highly resistive one. Due its simplicity, precise depth control compatibility with planar technologies, ion potential alternative mesa etching. Selective masking the surface photoresist followed by irradiation efficient practical way isolate closely spaced devices. Irradiation GaAs ions results in...
The evolution of the sheet resistance (Rs) in δ-doped layers GaAs during He ion irradiation was investigated. Rs increases with dose accumulation a similar way that occurs much wider dopant profiles, produced either by implantation or epi-growth. becomes higher than 109 Ω/sq after so-called threshold (Dth) is accumulated. values Dth closely correlate ratio estimated number replacement collisions at depth layer and original hole concentration. maximum thermal stability isolation, i.e....
A aprendizagem ubíqua surgiu da combinação das tecnologias de computação com modelos focados em mobilidade e na adaptação aos diferentes contextos do cotidiano aprendiz. Desta forma, essa tecnologia pode ser oferecida como um recurso nas relações aprendiz o contexto educacional, permitindo oferecer, encontrar recuperar informações interação ambiente aprendizagem. O entendimento dessas ajudar organização que impactam a tomada decisões regulação bem-estar deles busca por uma mais...
Purpose The purpose of this paper is to compare different junctions' parameters extraction models. Design/methodology/approach I‐V curves p + ‐ n and well diodes were measured. Five models for on characteristics in an educational poly‐Si gate complementary metal oxide semiconductor (CMOS) technology applied. areas 30 × μ m the source‐body junction PMOS transistor 220 250 ‐body junction. sintered forming gas (10 percent H 2 ) temperature interval 450‐525°C times from min up 4 h. Findings It...
A fully analog-to-digital converter was fabricated with a new developed educational poly-Si gate 5μm CMOS technology of the Laboratory Microelectronics Instituto de Física, Universidade Federal do Rio Grande Sul. The ISE_TCAD simulation software used for adjustment and design parameters extraction. These simulations were to obtain data like effective channel length, junction depth, also determine critical steps technological process. A/D consists on ring oscillator, 8-bit counter...