A5015005477- 2D Materials and Applications
- Nanowire Synthesis and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
- Perovskite Materials and Applications
- Crystal Structures and Properties
- Advanced Thermoelectric Materials and Devices
- Plasmonic and Surface Plasmon Research
- Iron-based superconductors research
- Chalcogenide Semiconductor Thin Films
- Topological Materials and Phenomena
- Advanced Sensor and Energy Harvesting Materials
Northwestern University
2021-2023
Abstract It is highly desirable for exploring and discovering new materials outcome‐based approaches to exceed the Shockley–Queisser limit single‐junction photovoltaic cells. Low‐dimensional piezoelectric have potential generate optoelectronic phenomenon called bulk effect, which not limited by theoretical solar radiation into electricity conversion. The recent development of 2D has demonstrated that using effect (BPVE) crystals lacking inversion symmetry, it possible overcome this limit. So...
In future solar cell technologies, the thermodynamic Shockley-Queisser limit for solar-to-current conversion in traditional p-n junctions could potentially be overcome with a bulk photovoltaic effect by creating an inversion broken symmetry piezoelectric or ferroelectric materials. Here, we unveiled mechanical distortion-induced behavior two-dimensional (2D) material, MoTe2, caused phase transition and MoTe2. The from single-crystalline semiconducting 2H-MoTe2 to semimetallic 1T'-MoTe2 was...
The construction of high-speed electronic devices that can be integrated using a single two-dimensional (2D) semiconductor with high performance remains challenging due to the absence locally selective doping methods. In this study, we have demonstrated opposite polarities (p-type or n-type) from an intrinsic 2H-MoTe2 field-effect transistor (FET) configured through carrier type band modulation in molybdenum ditelluride (MoTe2) caused by charge storage interface MoTe2/BN vdW heterostructures...
p–n junctions constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, are not considerably reported. This study presents a mechanical exfoliation-based technique to prepare PtS2/Si pyramid for investigation of tunneling and breakdown diodes. The demonstrated diode exhibited high rectifying performance reaching rectification ratio (If/Ir) ∼7.2 × 104 at zero gate bias ideality factor ∼1.5. Zener was observed low reverse region...
Metal chalcophosphates, M2P2Q6 (M = transition metals; Q chalcogen), are notable among the van der Waals materials family for their potential magnetic ordering that can be tuned with an appropriate choice of metal or chalcogen. However, there has not been a systematic investigation basic structural evolution in these systems alloying crystal subunits due to challenge diffusion process mixing different cations octahedral sites materials. In this work, P2S5 flux method was used enable...
Abstract The recent development of two‐dimensional (2D) materials has demonstrated that by using the bulk photovoltaic effect (BPVE) for crystals lacking inversion symmetry, it is possible to overcome Shockley–Queisser limit. So far, exploration 2D p–n junction designs have recently been extensively investigated. However, mechanism BPVE differs from traditional junction‐based photovoltaics in materials. This paper presents first experimental demonstration 1T′‐MoTe 2 . measured intensity...
Abstract Chemical vapor deposition growth of metal carbides is great interest as this method provides large area MXenes. This mainly done using a melted diffusion based process; however, different morphologies in process not well understood. In work, we report deterministic synthesis layered (non-uniform c -axis growth) and planar (uniform molybdenum carbide (Mo 2 C) diffusion-mediated growth. Mo-diffusion limited mechanism proposed where the competition between Mo C adatoms determines...
The metal thiophosphates (MTP), M2P2S6, are a versatile class of van der Waals materials, which notable for the possibility tuning their magnetic properties with incorporation different transition-metal cations. Further, they also offer opportunities to probe independent and synergistic role magnetically active cation sublattice when coupled P2Q6 polyhedra. Herein, we report structural, magnetic, electronic series MTPs, MnxCo2-xP2S6 (x = 0.25, 0.5, 1, 1.5, 1.75) synthesized by P2S5 flux...
Heterostructures of optical cavities and quantum emitters have been highlighted for enhanced light-matter interactions. A silicon nanosphere, core, MoS2, shell, structure is one such heterostructure referred to as the core@shell architecture. However, complexity synthesis inherent difficulties locally probe this architecture resulted in a lack information about its localized features limiting advances. Here, we utilize valence electron energy loss spectroscopy (VEELS) extract spatially...
In future solar cell technologies, the thermodynamic Shockley-Queisser limit for solar-to-current conversion in traditional p-n junctions could potentially be overcome with a bulk photovoltaic effect by creating an inversion broken symmetry piezoelectric or ferroelectric materials. Here, we unveiled mechanical distortion-induced behavior two-dimensional material (2D), MoTe2, caused phase transition and MoTe2. The from single-crystalline semiconducting 2H-MoTe2 to semi-metallic 1T-MoTe2 was...
The p-n junction constructed from the group-10 TMDCs, or namely, transition metal dichalcogenides with an intrinsic layered structure, is not considerably reported. This study presents a mechanical exfoliation-based technique to prepare PtS2 pyramids Si junctions for investigation of tunneling and breakdown diodes. demonstrated diode exhibited high rectifying performance reaching rectification ration (If/Ir) 7.2 *10^4 at zero gate bias ideality factor 1.5. zener was observed low reverse...