A5080292671- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- 2D Materials and Applications
- Semiconductor materials and devices
- Transition Metal Oxide Nanomaterials
- Graphene research and applications
- Thin-Film Transistor Technologies
- Neuroscience and Neural Engineering
- Conducting polymers and applications
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Organic Electronics and Photovoltaics
- Advanced Sensor and Energy Harvesting Materials
- Organic Light-Emitting Diodes Research
- Boron and Carbon Nanomaterials Research
- CCD and CMOS Imaging Sensors
- Nanowire Synthesis and Applications
- Physics of Superconductivity and Magnetism
- Semiconductor materials and interfaces
- Magnetic properties of thin films
- Quantum Dots Synthesis And Properties
- Advanced Battery Technologies Research
- Gold and Silver Nanoparticles Synthesis and Applications
- Laser-Ablation Synthesis of Nanoparticles
- Photovoltaic System Optimization Techniques
University of Wuppertal
2023-2024
Sejong University
2020-2024
Faculty of Media
2023
COMSATS University Islamabad
2023
Air University
2014
With the current evolution in artificial intelligence technology, more biomimetic functions are essential to execute increasingly complicated tasks and respond challenging work environments. Therefore, an nociceptor plays a significant role advancement of humanoid robots. Organic–inorganic halide perovskites (OHPs) have potential mimic biological neurons due their inherent ion migration. Herein, versatile reliable diffusive memristor built on OHP is reported as nociceptor. This showed...
Abstract To avoid the complexity of circuit for in‐memory computing, simultaneous execution multiple logic gates (OR, AND, NOR, and NAND) memory behavior are demonstrated in a single device oxygen plasma‐treated gallium selenide (GaSe) memtransistor. Resistive switching with R ON /R OFF ratio range 10 4 to 6 is obtained depending on channel length (150 1600 nm). Oxygen plasma treatment GaSe film created shallow deep‐level defect states, which exhibit carriers trapping/de‐trapping, that lead...
Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage to store required information, but their lack flexibility limits potential for biological applications. After discovery two-dimensional (2D) materials, flexible easy build, because nature. Here, we report on our resistive-switching devices, composed a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over PET substrate....
Redox-based oxide resistive random-access memories (ReRAM) are being pursued as adjustable electronic devices for integrated network applications such neuromorphic computing. Ion migration, which can be divided into cation (electrochemical metallization memory: ECM) and anion (valence change VCM), defines the electrical response of ReRAM. In this study, coexistence control these two ion migrations explored in a single memory cell composed zirconia (ZrO2). The oxygen vacancies, responsible...
In this study, P3HT:PC61BM was utilized to fabricate flexible organic solar cells (OSCs) on the polyethylene terephthalate substrates under an ambient atmosphere. An efficient electron transport layer (ETL) employed achieve a better device performance. The ETL fabricated by making nanocomposite from zinc oxide (ZnO) and polyethyleneimine ethoxylated (PEIE). PEIE doping causes reduction of work function ZnO as well passivates interface, which ultimately improved performance cell. device's...
Organic nonvolatile memory devices have a vital role for the next generation of electrical units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as organic heterojunction with inorganic ZnO protective layer. The prepared has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), environmental stability. observation is attributed...
The construction of high-speed electronic devices that can be integrated using a single two-dimensional (2D) semiconductor with high performance remains challenging due to the absence locally selective doping methods. In this study, we have demonstrated opposite polarities (p-type or n-type) from an intrinsic 2H-MoTe2 field-effect transistor (FET) configured through carrier type band modulation in molybdenum ditelluride (MoTe2) caused by charge storage interface MoTe2/BN vdW heterostructures...
Graphene (Gr) has shown a significant role in photovoltaic applications due to its exclusive properties. In this study, we established facile approach fabricate p-Gr/HfO2/n-silicon, metal–insulator–semiconductor (MIS) Schottky junction solar cell. Nevertheless, the poor work function of Gr and high-density defect states at Gr/Si interface obstruct efficiency cells. To avoid problem, optimal thickness interfacial layer (HfO2) is employed, which circumvents recombination process interface....
In this study, the dominant role of top electrode is presented for Nb2O5-based devices to demonstrate either resistive switching or threshold characteristics. These may exhibit different characteristics depending on selection electrode. The use inert (Au) initiates in Au/Nb2O5/Pt device. Alternatively, are induced by using reactive electrodes (W and Nb). X-ray photoelectron spectroscopy analysis confirms presence oxide layers WOy NbOx at interfaces W Nb as electrodes. However, no interface...
Abstract Here, van der Waals multi‐heterojunctions (PN, NP, PIN, and NPN) are fabricated by stacking of MoTe 2 , hexagonal boron nitride (h‐BN), MoSe nanoflakes using a mechanical‐exfoliation technique where the dynamic rectification is examined. Low‐resistance metal contacts Al/Au Pt/Au applied to respectively, gate‐dependent rectifying behavior achieved, with ratio up 10 5 in PN devices. It found that performance device enhanced placing an interfacial layer h‐BN between two opposite layers...
Abstract Electronic devices with simultaneous manifestation of multiphysical properties are great interest due to their possible application in multifunctional devices. In the present study, execution negative differential resistance (NDR) effect, current rectification (≈10 5 ), and resistive switching characteristics 3 ) demonstrated BaTiO /CeO 2 heterostructure. Although effect has gained huge attention, its instability poor reproducibility at room temperature main obstacles electronic...
The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical applications. Recent studies 2D reignited attraction in the p-n junction, promising potential for applications both electronics and optoelectronics. provide exceptional band structural diversity junction devices, which is rare regular bulk semiconductors. In this article, we demonstrate a diode multiheterostructure configuration, WTe
The surface passivation of a CMOS image sensor (CIS) is highly beneficial for the overall improvement device performance. We employed thermal atomic layer deposition (T-ALD) and plasma enhanced (PE-ALD) techniques 20 nm HfO<sub>2</sub> as well stacked with 3 5 Al<sub>2</sub>O<sub>3</sub> thin films. HfO<sub>2</sub>/Si Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/Si metal-oxide-semiconductor structures were used to analyze fixed charge density (Q<sub>f</sub>) interface trap (D<sub>it</sub>)....