A5103235609- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Conducting polymers and applications
- Perovskite Materials and Applications
- Neuroscience and Neural Engineering
- Organic Electronics and Photovoltaics
- Supercapacitor Materials and Fabrication
- 2D Materials and Applications
- Thin-Film Transistor Technologies
- Graphene research and applications
- Organic Light-Emitting Diodes Research
- Transition Metal Oxide Nanomaterials
- Semiconductor materials and interfaces
- Advanced Sensor and Energy Harvesting Materials
- CCD and CMOS Imaging Sensors
- Power Transformer Diagnostics and Insulation
- MXene and MAX Phase Materials
- Electronic and Structural Properties of Oxides
- Molecular Junctions and Nanostructures
- Metal-Organic Frameworks: Synthesis and Applications
- Photovoltaic System Optimization Techniques
- Ferroelectric and Piezoelectric Materials
- Neural Networks and Reservoir Computing
- Advancements in Battery Materials
Sejong University
2020-2024
Electric Vehicle Transportation Center
2003
With the current evolution in artificial intelligence technology, more biomimetic functions are essential to execute increasingly complicated tasks and respond challenging work environments. Therefore, an nociceptor plays a significant role advancement of humanoid robots. Organic–inorganic halide perovskites (OHPs) have potential mimic biological neurons due their inherent ion migration. Herein, versatile reliable diffusive memristor built on OHP is reported as nociceptor. This showed...
Abstract To avoid the complexity of circuit for in‐memory computing, simultaneous execution multiple logic gates (OR, AND, NOR, and NAND) memory behavior are demonstrated in a single device oxygen plasma‐treated gallium selenide (GaSe) memtransistor. Resistive switching with R ON /R OFF ratio range 10 4 to 6 is obtained depending on channel length (150 1600 nm). Oxygen plasma treatment GaSe film created shallow deep‐level defect states, which exhibit carriers trapping/de‐trapping, that lead...
Emerging technologies such as neuromorphic computing and nonvolatile memories based on floating gate field-effect transistors (FETs) hold promise for addressing a wide range of artificial intelligence tasks. For example, seeks to emulate the human brain's functionality employs device that mimics role synapse in brain. However, achieving high current ON/OFF ratio program erase states memory with metal is necessary. This study demonstrates multi-functional heterostructures transition...
A metal-organic framework (MOF) is a highly porous material with abundant redox capacitive sites for intercalation/de-intercalation of charges and, hence, considered promising electrode materials in supercapacitors. In addition, dopants can introduce defects and alter the electronic structure MOF, which affect its surface reactivity electrochemical properties. Herein, we report copper-doped iron-based MOF (Cu@Fe-MOF/NF) thin film obtained via simple drop-cast route on 3D-nickel foam (NF)...
In this study, P3HT:PC61BM was utilized to fabricate flexible organic solar cells (OSCs) on the polyethylene terephthalate substrates under an ambient atmosphere. An efficient electron transport layer (ETL) employed achieve a better device performance. The ETL fabricated by making nanocomposite from zinc oxide (ZnO) and polyethyleneimine ethoxylated (PEIE). PEIE doping causes reduction of work function ZnO as well passivates interface, which ultimately improved performance cell. device's...
Organic nonvolatile memory devices have a vital role for the next generation of electrical units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as organic heterojunction with inorganic ZnO protective layer. The prepared has consistent DC endurance (500 cycles), retention properties (104 s), high ON/OFF ratio (105), environmental stability. observation is attributed...
Graphene (Gr) has shown a significant role in photovoltaic applications due to its exclusive properties. In this study, we established facile approach fabricate p-Gr/HfO2/n-silicon, metal–insulator–semiconductor (MIS) Schottky junction solar cell. Nevertheless, the poor work function of Gr and high-density defect states at Gr/Si interface obstruct efficiency cells. To avoid problem, optimal thickness interfacial layer (HfO2) is employed, which circumvents recombination process interface....
Redox-based oxide resistive random-access memories (ReRAM) are being pursued as adjustable electronic devices for integrated network applications such neuromorphic computing. Ion migration, which can be divided into cation (electrochemical metallization memory: ECM) and anion (valence change VCM), defines the electrical response of ReRAM. In this study, coexistence control these two ion migrations explored in a single memory cell composed zirconia (ZrO2). The oxygen vacancies, responsible...
The diversity of brain functions depend on the release neurotransmitters in chemical synapses. back gated three terminal field effect transistors (FETs) are auspicious candidates for emulation biological to recognize proficient neuromorphic computing systems. In order encourage hysteresis loops, we treated bottom side MoTe2 flake with deep ultraviolet light ambient conditions. Here, modulate short-term and long-term memory effects due trapping de-trapping electron events few layers a...
Abstract Electronic devices with simultaneous manifestation of multiphysical properties are great interest due to their possible application in multifunctional devices. In the present study, execution negative differential resistance (NDR) effect, current rectification (≈10 5 ), and resistive switching characteristics 3 ) demonstrated BaTiO /CeO 2 heterostructure. Although effect has gained huge attention, its instability poor reproducibility at room temperature main obstacles electronic...
Abstract Transparent and flexible diodes could be useful for future transparent electronics. Here such are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates. The three‐layered shows rectifying characteristics low voltage originated from Schottky barrier at W/ZnO (0.8 eV) ZnO/ITO (0.1 interfaces. Mechanical endurance is retained after different bending strengths rectification ratio showed stability 10 4 cycles without any...
The electrical and optical properties of transition metal dichalcogenides (TMDs) can be effectively modulated by tuning their Fermi levels. To develop a carrier-selectable optoelectronic device, we investigated intrinsically p-type MoTe2, which changed to n-type charging hexagonal boron nitride (h-BN) substrate through the application writing voltage using gate under deep ultraviolet light. part MoTe2 obtained locally pattern, whereas other parts remain p-type. Furthermore, control rate...
Abstract Due to its high dielectric constant ( κ ), the BaTiO 3 (BTO) thin film has significant potential as a next-generation material for metal oxide semiconductor field-effect transistors (MOSFETs). Hence, evaluation of BTO etching process is required such nanoscale device applications. Herein, characteristics and surface properties are examined according crystallinity film. The results demonstrate that rate low in high-crystallinity film, residues much lower than low-crystallinity In...
Abstract The electrical and optical properties of transition metal dichalcogenides (TMDs) can be effectively modulated by tuning their Fermi levels. To develop a carrier-selectable optoelectronic memory device, we investigated intrinsically p-type MoTe 2 , which changed to n-type charging hexagonal boron nitride (h-BN) substrate through the application writing voltage using gate under deep ultraviolet light. part obtained locally pattern, whereas other parts remain p-type. Furthermore,...