A5038301198- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- CCD and CMOS Imaging Sensors
- Neuroscience and Neural Engineering
- Analytical Chemistry and Sensors
- Quantum Computing Algorithms and Architecture
- Force Microscopy Techniques and Applications
- Neural dynamics and brain function
- Semiconductor materials and devices
- Neural Networks and Reservoir Computing
- Electronic and Structural Properties of Oxides
- Advanced Data Storage Technologies
- Quantum Information and Cryptography
- Manufacturing Process and Optimization
Polytechnic University of Turin
2023-2025
Istituto Nazionale di Ricerca Metrologica
2023-2024
<title>Abstract</title> The revision of the International System Units opens new perspectives for mise en pratique SI units, fixing numerical values fundamental constants nature. Here, we show realization an intrinsic standard resistance based on memristive devices working in air, at room temperature, directly accessible to end user. Operating nanoionic cells quantum conductance regime, report a programming strategy electrochemical polishing effects, allowing control levels multiple unit and...
This work demonstrates experimentally that the advantage gained in sensing using quantum photonic resources can be sustained, and even amplified, through complex classical post-processing aimed at extracting relevant features. Despite very different architectures of algorithms tested here, classification performance appears to robust qualitatively consistent. Thus results argue for widespread use technologies, any field deals with pattern recognition large datasets.
Abstract Memristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding relationship between involved materials, interfaces, device functionalities still represents challenge. In this work, we analyse effect electrode metals NbO x -based memristive cells. For purpose, Au, Pt, Ir, TiN, Nb top electrodes was investigated in based amorphous grown...
Performances of bipolar Au/NbO x /Nb devices were investigated by correlating the material properties electrochemically grown NbO with resistive switching functionalities.
Abstract Controlling nanoscale tip‐induced material removal is crucial for achieving atomic‐level precision in tomographic sensing with atomic force microscopy (AFM). While advances have enabled volumetric probing of conductive features nanometer accuracy solid‐state devices, materials, and photovoltaics, limitations spatial resolution sensitivity persist. This work identifies addresses in‐plane vertical tip‐sample junction leakage as sources parasitic contrast AFM, hindering real‐space 3D...
The challenge of pattern recognition is to invoke a strategy that can accurately extract features dataset and classify its samples. In realistic scenarios this may be physical system from which we want retrieve information, such as in the readout optical classical memories. theoretical experimental development quantum reading has demonstrated memories dramatically enhanced through use resources (namely entangled input-states) over best strategies. However, practicality advantage hinges upon...