A5042281582- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Force Microscopy Techniques and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Electronic and Structural Properties of Oxides
- Neuroscience and Neural Engineering
- 2D Materials and Applications
- MXene and MAX Phase Materials
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Ferroelectric and Piezoelectric Materials
- Advancements in Photolithography Techniques
- Graphene research and applications
- Electron and X-Ray Spectroscopy Techniques
- Advanced Surface Polishing Techniques
- Surface and Thin Film Phenomena
- Advanced Electron Microscopy Techniques and Applications
- Modular Robots and Swarm Intelligence
- Near-Field Optical Microscopy
- Transition Metal Oxide Nanomaterials
- Metal and Thin Film Mechanics
- Mechanical and Optical Resonators
- Photoreceptor and optogenetics research
- Advanced Materials Characterization Techniques
Arizona State University
2023-2025
IMEC
2015-2024
University of Twente
2020-2022
Stanford University
2020-2021
KU Leuven
2012-2019
Oak Ridge National Laboratory
2019
Material (Belgium)
2016
Imec the Netherlands
2015
The basic unit of information in filamentary-based resistive switching memories is physically stored a conductive filament. Therefore, the overall performance device indissolubly related to properties such In this Letter, we report for first time on three-dimensional (3D) observation shape filament done nanoscale conductive-bridging device, which programmed under real operative conditions. To obtain 3D-information developed dedicated tomography technique based atomic force microscopy. and...
Recent advances in machine learning (ML) offer new tools to extract insights from large data sets and acquire small more effectively. Researchers nanoscience are experimenting with these tackle challenges many fields. In addition ML's advancement of nanoscience, provides the foundation for neuromorphic computing hardware expand implementation ML algorithms. this Mini Review, we highlight some recent efforts connect communities by focusing on three types interaction: (1) using analyze sets,...
Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic. Currently accepted models explain the switching in these devices through presence/absence of conductive filament (CF) that described reversible nanosized valence-change an material. During device operation, CF cycles billion times at subnanosecond speed, using few tens microamperes operating current thus determines whole device's performance. Despite its...
Abstract On the development of flexible electronics, a highly nonvolatile memory, which is an important circuit component for portability, necessary. However, flexibility existing memory has been limited, e.g . smallest radius into can be bent millimeters range, due to difficulty in maintaining properties while bending. Here we propose ultra resistive using Ag-decorated cellulose nanofiber paper (CNP). The CNP devices showed stable effects with 6 orders ON/OFF resistance ratio and small...
Two-dimensional materials (2DMs) have gained significant interest for resistive-switching memory toward neuromorphic and in-memory computing (IMC). To achieve atomic-level miniaturization, we introduce vertical hexagonal boron nitride (h-BN) memristors with graphene edge contacts. In addition to enabling three-dimensional (3D) integration (i.e., stacking) ultimate scalability, the proposed structure delivers ultralow power by isolating single conductive nanofilaments (CNFs) in ultrasmall...
Metal-oxide-based resistive random access memory (RRAM) is a predominant candidate for future non-volatile memories. In this Letter, we report on an innovative technique to observe conductive filaments in these oxide-based RRAM devices. We demonstrate the role of as responsible different ON/OFF states devices by means Conductive Atomic Force Microscopy (C-AFM). More specifically, C-AFM used cycle, de-process, and finally characterizes capacitor-like Different are found states. As show, state...
Ferroelectric hafnium oxide is a promising candidate for logic and memory applications as it maintains excellent ferroelectric properties at nm-size ensuring compatibility with state of the art semiconductor manufacturing. Most published papers report on study this material through Metal-Insulator-Metal capacitors or Metal-Insulator-Silicon transistors. However, 3D vertical transistors in which both channel gate are polysilicon, case silicon-based electrodes cannot be ignored. In paper, we...
Single-use disposable nonvolatile memory devices hold promise for novel applications in internet of everything (IoE) technology by storing the health status individual humans daily life. However, conventional are not because they mostly composed non-renewable, non-biodegradable and sometimes toxic materials, causing serious damage to ecological systems when released environment. Here, we demonstrate an environment-friendly, device 99.3 vol.% nanocellulose. Our consists a nanocellulose-based...
The formation and rupture of conductive filaments (CFs) inside an insulating medium is used as hardware encoding the state a memory cell ("1" - "0") in filamentary-based bridging memories. Currently accepted models explain filament erase (reset) subtraction metal atoms from CF; however, they do not fully account for rich set phenomena experimentally observed during reset. details are unraveled on nanometer scale by means atomic force microscopy-based tomography technique enabling 3D...
The rapid cadence of MOSFET scaling is stimulating the development new technologies and accelerating introduction semiconducting materials as silicon alternative. In this context, 2D with a unique layered structure have attracted tremendous interest in recent years, mainly motivated by their ultra-thin body nature optoelectronic mechanical properties. scalable synthesis techniques obviously fundamental step towards manufacturable technology. Metal-organic chemical vapor deposition has...
A great improvement in valence change memory performance has been recently achieved by adding another metallic layer to the simple metal-insulator-metal (MIM) structure. This metal is often referred as oxygen exchange (OEL) and introduced between one of electrodes oxide. The OEL believed induce a distributed reservoir defects at metal-insulator interface thus providing an unlimited availability building blocks for conductive filament (CF). However, its role remains elusive controversial...
The tunneling current through an atomic force microscopy (AFM) tip is used to evaluate the effective electrical contact area, which exists between and sample in contact-AFM measurements. A simple procedure for evaluation of area described using conductive (C-AFM) combination with a thin dielectric. We characterize coated metal doped-diamond tips operated at low (<200 nN) mode. In both cases, we observe that only small fraction (<10 nm2) physical (∼100 effectively contributing...
The electrochemical reactions triggering resistive switching in conductive-bridge random access memory (CBRAM) are spatially confined few tens of nm3. formation and dissolution nanoscopic Cu-filaments rely on the displacement ions such volume, it is driven by electric field induced ion migration nanoscaled redox reactions. stochastic nature these fundamental processes leads to a large variability device performance. In this work, combination two- three-dimensional scanning probe microscopy...
To address the requirements of 2T0C 3D-DRAMs, raised source/drain architecture for front-gated amorphous IGZO-TFTs is demonstrated. Record I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> (> 30 µA/µm) with V xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> +0.3 achieved scaled a-IGZO channel and CAAC-IGZO contacts along oxygen tunnel module. The role on device performance systematically investigated. We also report ultra-low...
We show how interfacial oxide engineering in La-doped hafnium zirconate (HZO) ferroelectric (FE) capacitor stacks can be used to significantly improve the response and remnant polarization (P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</inf> ) of HZO. This is achieved by incorporating either a 1 nm TiO xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> seed and/or 2 Nb O xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> cap layer bilayer...
Scanning probe microscopy (SPM) has revolutionized our ability to explore the nanoscale world, enabling imaging, manipulation, and characterization of materials at atomic molecular level. However, conventional SPM techniques suffer from limitations, such as slow data acquisition, low signal-to-noise ratio, complex analysis. In recent years, field machine learning (ML) emerged a powerful tool for analyzing datasets extracting meaningful patterns features in multiple fields. The combination ML...
Layered antiferromagnetic oxyhalides with high environmental stability have recently attracted significant interest owing to their applications in spintronics and quantum devices. These materials can sustain a host of interesting phenomena that arise from magnetic phase transitions associated structural changes. Although bulk crystal synthesis for some members this oxyhalide family has been previously reported, bottom-up approaches scalable growth remain limited. In work, we demonstrated the...
Abstract magnified image Resistive random access memories are emerging as a new type of memory that has the potential to combine both speed volatile and retention nonvolatile memories. It operates based on formation/dissolution low‐resistivity filament being constituted either metallic ions or atomic vacancies within an insulating matrix. At present, mechanisms parameters controlling performances device remain unclear. In respect, first‐principles simulations provide useful insights...