A5038714522- Semiconductor materials and devices
- Surface Modification and Superhydrophobicity
- Copper Interconnects and Reliability
- Thin-Film Transistor Technologies
- Conducting polymers and applications
- Advanced Sensor and Energy Harvesting Materials
- Plasma Diagnostics and Applications
- 3D IC and TSV technologies
- Diamond and Carbon-based Materials Research
- Gas Sensing Nanomaterials and Sensors
- Electrochemical sensors and biosensors
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Plasma Applications and Diagnostics
- Ferroelectric and Negative Capacitance Devices
- Catalytic Processes in Materials Science
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Analytical Chemistry and Sensors
- Magneto-Optical Properties and Applications
- Electronic Packaging and Soldering Technologies
- Magnesium Alloys: Properties and Applications
- Ferroelectric and Piezoelectric Materials
- Epoxy Resin Curing Processes
- Advanced Chemical Sensor Technologies
IMEC
2018-2024
Jožef Stefan Institute
2014-2020
National Institute of Chemistry
2018-2019
Jožef Stefan International Postgraduate School
2014-2016
We report for the first time a fully 300-mm stacking-compatible capacitor-less DRAM cell with >400s retention by integrating two IGZO-TFTs in 2T0C configuration. optimize single IGZO-TFT performances engineering materials surrounding IGZO layer and transistor layout parameters. thus introduce novel device demonstrate scaled (W = 70 nm, L 45 nm) optimal V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> reproducibility on wafers. By...
This white paper considers the future of plasma science and technology related to manufacturing modifications plastics textiles, summarizing existing efforts current state‐of‐art for major topics processing techniques. It draws on frontier technologies in order see beyond identify grand challenges which we face following 5–10 years. To progress move forward, highlights enabling design surfaces, coatings materials with non‐equilibrium plasmas. The aim is field textile production using...
Integration density is one of the major criteria that ferroelectric (FE) capacitors must meet before they can be deployed in FeRAM memory arrays replace conventional DRAM memories. In this work we demonstrate, for first time, back-end-of-line compatible 3D-trench FE La doped hafnium zirconium oxide (HZO) based fabricated with a foot-print area 200nm x applications. The are on trilayer stack (TiO2/La HZO/Nb2O5) TiN as top and bottom electrodes. initial wake-up films dominated by domain...
Atmospheric-pressure DBD plasma was used as a methodology for intensified protein removal from crustacean shell waste.
We demonstrate that the retention of IGZO-based 2T0C devices is boosted by patterning active module RIE. While IBE generates Al redeposition on device sidewalls creating an extrinsic conductive path, RIE enables a clean process which suppresses metal redeposition. With RIE, we achieve lowest $\mathrm{I}_{\mathrm{O}\mathrm{F}\mathrm{F}}$ ever reported for cells (<3× 1$0^{-21}$A/$\mu$m), and successfully perform multi-level multiply-accumulate operations enabling machine-learning applications....
In order to expand the use of titania indoor as well increase its overall performance, narrowing band gap is one possibilities achieve this. Modifying with rare earths (REs) has been relatively unexplored, especially modification rutile earth cations. The aim this study was find influence TiO₂ on structural, optical, morphological, and photocatalytic properties. Titania synthesized using TiOSO₄ source titanium via hydrothermal synthesis procedure at low temperature (200 °C) modified selected...
To address the requirements of 2T0C 3D-DRAMs, raised source/drain architecture for front-gated amorphous IGZO-TFTs is demonstrated. Record I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> (> 30 µA/µm) with V xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> +0.3 achieved scaled a-IGZO channel and CAAC-IGZO contacts along oxygen tunnel module. The role on device performance systematically investigated. We also report ultra-low...
We demonstrate a fully 300-mm BEOL-compatible IGZO-based capacitorless DRAM cell with >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> s retention and xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> endurance lifetime. reveal the impact of IGZO-TFT architecture on memory performance 2TOC structures, we select gate-last integration scheme buried oxygen tunnel self-aligned contacts. With this architecture, >100s time down to scaled...
The in-situ cure and kinetics of an epoxy resin based on diglycidyl ether bisphenol A (DGEBA) polymerized with anhydride hardener its mixtures a liquid polybutadiene rubber having hydroxyl functionality (HTPB) were studied using Fourier transform infrared spectroscopy (FTIR) differential scanning calorimetry (DSC) in isothermal mode. reaction was monitored by FTIR observing variation intensity epoxy, anhydride, ester bands. mechanisms which the network structure developed discussed....
Natural gas from stranded sources is being predominantly flared, and there a growing demand for new technologies its utilisation, where electrification, flexibility, modularity play an important role. Plasma-activated methane partial oxidation reaction was studied in designed dielectric barrier discharge ionisation reactor unit, producing value-added platform chemicals, namely, methanol, formaldehyde, intermediate formic acid, acetic paraformaldehyde at ambient temperature atmospheric...
A novel method for improving the CTI performance level of polyphenol composites by oxygen plasma selective etching.
The integration of a three-layer BEOL process which includes an intermediate 21 nm pitch level, relevant for the 3 technology node, is demonstrated. A full barrier-less Ruthenium (Ru) dual-damascene (DD) metallization allowed to test different dimensions minimum island, via extension and tip-to-tip (T2T). Five-track place route (PNR) SRAM constructions were realized with self-aligned block (SAB) technique. Stacked vias showed resistance modulation size island due change in chamfer. High...
We present for the first time a nonaqueous sol–gel route to produce ultrasmall (<2 nm) magnetic bimetallic CoPt3 nanoparticles (NPs). The one-pot procedure is carried out at low temperature (180 °C) using benzyl alcohol, acting as both reducing agent and solvent. highly monodisperse NPs were investigated with innovative advanced X-ray methods (whole powder pattern modeling), HR-STEM, XPS, SQUID magnetometry. XPS showed Co was mostly in metallic form, but very small amount of CoO on NP...
For the first time, we establish a fabrication process flow of an EUV-era ultra-density 6-surrounding-gate-transistor SRAM with 0.0205 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> unit cell area and demonstrate nMOS surrounding-gate-transistor function. In this paper, design layout is shown, key steps are explained in detail. NMOS functional device characteristics analyzed.
Compositing with suitable fillers is a common strategy to improve the electrical insulation properties of polymer materials, which limited by carbonization protruding surface polymer. To resolve this, we performed an Ar/O2 plasma etching on glass-filled polyphenolic composite uncover fillers selective removal Exposure glass increased performance level up 65%, enabled material be used as insulator for commercial applications. Plasma diagnostics probe measurements and emission spectroscopy...
Achieving optimal hydrophobicity of polymer materials especially polymer–matrix composites is important for many material applications. Herein the interplay factors determining hydrophobic surface presented during CF4 plasma treatments which lead to functionalization as well selective etching. The continuous exposure reactive species induces and etching on surface, decides morphology chemistry. Consequently, exothermic processes plasma–surface interactions are another factor influences...
We report a systematic study on the selective polymer composite etching and unravelling mechanisms in various RF gas plasmas.
For any semiconducting metal oxides, dielectric properties of nanomaterial play an important role, which determines various activities such as sensing, catalytic activity, adsorption, etc. These depend on the chemical composition, method synthesis and surface characteristics. Various physical nanomaterials can be tuned by choosing treatments or novel synthetic routes. Among oxide semiconductors, SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...