We propose an ultrahigh quality factor (Q) photonic crystal slab nanocavity created by the local width modulation of a line defect. show numerically that this has intrinsic Q value up to 7×107. Transmission measurements for fabricated Si photonic-crystal-slab nanocavities directly coupled input/output waveguides have exhibited loaded ∼800000. These theoretical and experimental values are very high nanocavities. In addition, we demonstrate simply shifting two holes away from defect is...

We have demonstrated all-optical bistable switching operation of resonant-tunnelling devices with ultra-small high-Q Si photonic-crystal nanocavities. Due to their high Q/V ratio, the energy is extremely small in comparison that conventional using same optical nonlinear mechanism. also show they exhibit all-opticaltransistor action by two resonant modes. These ultrasmall unique potentials function as various signal processing functions photonic-crystal-based optical-circuits.

The design, fabrication, and measurement of photonic-band-gap (PBG) waveguides, resonators their coupled elements in two-dimensional photonic crystal (PhC) slabs have been investigated. We studied various loss mechanisms PBG waveguides achieved a very low propagation (~1 dB/mm). For these we observed large group delay (>100 ps) by time-domain measurement. As regards resonators, realize high-Q small volume PhC appropriate design. Finally, demonstrate forms resonators: 2-port...

We demonstrate all-optical switching in the telecommunication band, silicon photonic crystals at high speed (∼50ps), with extremely low energy (a few 100fJ), and contrast (∼10dB). The devices consist of ultrasmall high-quality factor nanocavities connected to input output waveguides. Switching is induced by a nonlinear refractive-index change caused plasma effect carriers generated two-photon absorption silicon. small mode volume led an extraordinarily large reduction energy. estimated...

We demonstrate extremely low-power all-optical bistability by utilizing silicon photonic crystal nanocavities, based on the plasma effect of carriers generated two-photon absorption. Owing to high quality factor and small volume photon density inside cavity becomes high, which leads a large reduction in operation power. Optical bistable single nanocavity permits optical read–write memory operation, opens possibility an integrated logic circuit chip, crystals. The demonstrated threshold power...

Detailed propagation loss spectrum measurements for line-defect waveguides in silicon photonic crystal slabs are presented, which show record low values $(5\phantom{\rule{0.3em}{0ex}}\mathrm{dB}∕\mathrm{cm})$ and complicated frequency dependence. We quantitatively analyze the origin of shape using a photon Green function theory obtain very good agreement, thus providing an explanation complex physical mechanisms responsible observed loss. In particular, we demonstrate influence out-plane,...

Recently, various wavelength-sized cavities with theoretical Q values of approximately 10(8) have been reported, however, they all employ 2D or 3D photonic band gaps to realize strong light confinement. Here we numerically demonstrate that ultrahigh-Q (2.0x10(8)) and (V(eff) 1.4(lambda/n)3) can be achieved by employing only 1D periodicity.

On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides described. A high dose of Ar+ introduced, and annealing used recrystallize silicon thus create dislocation loops at center PhC slab. Dislocation enable fast recombination carriers, which allows a recovery time for switches. The window (∼70ps) three times smaller than without implantation, while required operating...

We experimentally and theoretically clarified that a Fano resonant system based on coupled optical cavity has better performance when used as an all-optical switch than single in terms of switching energy, contrast, operation bandwidth. successfully fabricated consisting doubly photonic-crystal (PhC) nanocavities, demonstrated for the first time. A steep asymmetric transmission spectrum was clearly observed, thereby enabling low-energy high-contrast operation. achieved with pump energy few...

Lasers with ultra-low operating energy are desired for use in chip-to-chip and on-chip optical interconnects. If we to reduce the energy, must active volume. Therefore, a photonic crystal (PhC) laser wavelength-scale cavity has attracted lot of attention because PhC provides large Q-factor small To improve this device's performance, employ an embedded region structure which is buried InP slab. This enables us achieve effective confinement both carriers photons, thermal resistance device....

Adiabatic frequency shifting is demonstrated by tuning an ultrahigh-Q photonic crystal nanocavity dynamically. By resolving the output temporally and spectrally, we showed that of light in cavity follows resonance shift remains a single mode throughout process. This confirmed unambiguously results from adiabatic tuning. We have employed this process to achieve dynamic release trapped thus generate short pulse. approach provides simple way Q

We report designs for a silicon-on-insulator (SOI) one-dimensional (1D) photonic crystal (PhC) nanocavity with modulated mode-gap barriers based on the lowest dielectric band. These cavities have an ultrahigh theoretical quality factor (Q) of 10(7)-10(8) while maintaining very small modal volume 0.6-2.0 (lambda/n)(3), which are highest Q any nanocavities SiO(2) under-cladding. fabricated these SOI 1D-PhC and confirmed that they exhibited 3.6 x 10(5), is also measured SOI-type PhC...

We demonstrate that ultrasmall double-layer photonic-crystal-slab cavities exhibit a very high-Q value for wide range of the layer spacing, which enables us to realize unique optomechanical coupling. By mechanically varying separation, we can achieve extraordinarily large wavelength conversion. In addition, light stored in cavity generate radiation force. show this system exhibits extremely high energy conversion efficiency between optical and mechanical energy, leading novel approach control matter.

We demonstrate optical bistability in silicon using a high-Q (Q > 105) one-dimensional photonic crystal nanocavity at an extremely low 1.6 microW input power that is one tenth the previously reported value. Owing to device's unique geometrical structure, light and heat efficiently confine very small region, enabling strong thermo-optic confinement. also showed with numerical analyses this device can operate speed of approximately 0.5 micros.

We have fabricated high-Q photonic crystal nanocavities with a lateral p-i-n structure to demonstrate low-power and high-speed electro-optic modulation in silicon chip. GHz operation is demonstrated at very low (microW level) operating power, which about 4.6 times lower than that reported for other cavities silicon. This due the small size of nanocavity.

We demonstrate a small foot print (600 nm wide) 1D silicon photonic crystal electro-optic modulator operating with only 50 mV swing voltage and 0.1 fJ/bit switching energy at GHz speeds, which are the lowest values ever reported for modulator. A 3 dB extinction ratio is demonstrated an ultra-low total device consumption of 42.8 fJ/bit, dominated by state holding energy. The reduced to 14.65 300 while still keeping less than 2 fJ/bit. Under optimum conditions, operates maximum speed Gbps 8...

If we are to utilize deep-subwavelength plasmonic waveguides in photonic integrated circuit applications, highly efficient three-dimensional (3D) mode conversion must be achieved between and conventional dielectric such as Si-wire waveguides. Here, describe 3D from a waveguide (the core size is 400  nm×200  nm) slot air 50  nm×20  nm) with coupling loss of 1.7 dB. Our converter has only two-dimensional laterally tapered structure even the presence large discontinuity thickness, can still...

The power consumption of a conventional photoreceiver is dominated by that the electric amplifier connected to photodetector (PD).An ultralow-capacitance PD can overcome this limitation, because it generate sufficiently large voltage without an when combined with high-impedance load.In work, we demonstrate ultracompact InGaAs based on photonic crystal waveguide length only 1.7 μm and capacitance less than 1 fF.Despite small size device, high responsivity A/W clear 40 Gbit/s eye diagram are...

We demonstrated sub-wavelength (~111 nm diameter) single nanowire (NW) continuous wave (CW) lasers on silicon photonic crystal in the telecom-band with direct modulation at 10 Gb/s by optical pumping cryogenic temperatures. To estimate small signal response and pseudo-random bit sequence (PRBS) of our CW lasers, we employed a new detection technique that employs superconducting photon detector time-correlated counting module. The results showed NW laser was unambiguously modulated above an...