A5025960288- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Quantum and electron transport phenomena
- Photonic and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Molecular Junctions and Nanostructures
- Terahertz technology and applications
- Superconducting and THz Device Technology
- Advanced Optical Sensing Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Thermoelectric Materials and Devices
- Quantum-Dot Cellular Automata
- Electron and X-Ray Spectroscopy Techniques
- Ion-surface interactions and analysis
- Plasmonic and Surface Plasmon Research
- Semiconductor materials and interfaces
- CCD and CMOS Imaging Sensors
- Radio Frequency Integrated Circuit Design
- Surface and Thin Film Phenomena
- Silicon Nanostructures and Photoluminescence
- Analytical Chemistry and Sensors
- Thermal properties of materials
- Optical Coatings and Gratings
- GaN-based semiconductor devices and materials
Shizuoka University
2016-2025
Sojo University
2018-2021
SRM Institute of Science and Technology
2021
Osaka Institute of Technology
2021
Hirosaki University
2021
National Institute of Technology, Ariake College
2021
Hamamatsu University
2018
NTT Basic Research Laboratories
1996-2015
Hokkaido University
2012-2015
University of Toyama
2015
On-chip all-optical switching based on the carrier plasma dispersion in an argon ion (Ar+) implanted photonic crystal (PhC) nanocavity that is connected to input/output waveguides described. A high dose of Ar+ introduced, and annealing used recrystallize silicon thus create dislocation loops at center PhC slab. Dislocation enable fast recombination carriers, which allows a recovery time for switches. The window (∼70ps) three times smaller than without implantation, while required operating...
Epitaxial Al films were deposited on clean Si(111) and Si(100) by ionized-cluster beam at room temperature. Crystalline orientation was studied reflection electron diffraction during after the deposition of 360-nm-thick films. Ion channeling spectra, optical reflectance scanning micrographs taken to evaluate properties elucidate effects acceleration ionized clusters. It found that did not give rise hillock alloy penetration interface 450 °C thermal treatment.
We have achieved the operation of single-electron tunneling (SET) transistors with gate-induced electrostatic barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor (MOSFET) structures. The conductance tunnel is tunable by more than three orders magnitude. By flexible control barriers, systematic evolution from a single charge island to double islands was clearly observed. obtained excellent reproducibility in gate capacitances: values on order 10 aF, variation...
We present measurements of resonant tunneling through discrete energy levels a silicon double quantum dot formed in thin silicon-on-insulator layer. In the absence piezoelectric phonon coupling, spontaneous emission with deformation-potential coupling accounts for inelastic ground states two dots. Such transport enable us to observe Pauli spin blockade due effective two-electron spin-triplet correlations, evident distinct bias-polarity dependence states. The is lifted by excited-state...
The ultimate goal of future information processing might be the realization a circuit in which one bit is represented by single electron. Such challenging would comprise elemental devices whose tasks are to drag, transfer, and detect electrons. In achieving these tasks, Coulomb blockade, occurs tiny conducting materials, plays an important role. This paper describes current status research on such single-charge-control from viewpoints applications.
We propose a planar device architecture compatible with the CMOS process technology as optimal current benchmark of Si-nanowire (NW) thermoelectric (TE) power generator. The proposed is driven by temperature gradient that formed in proximity perpendicular heat flow to substrate. Therefore, unlike conventional TE generators, short Si-NWs need not be suspended on cavity structure. Under an externally applied difference 5 K, recorded density observed 12 μm/cm <sup...
Single-electron devices (SEDs) are attracting a lot of attention because their capability manipulating just one electron. For operation, they utilize the Coulomb blockade (CB), which occurs in tiny structures made from conductive material due to electrostatic interactions confined electrons. Metals or III–V compound semiconductors have so far been used investigate CB and related phenomena physical point view. However, silicon is preferable viewpoint applications integrated circuits because,...
Devices that combine single-electron and metal-oxide-semiconductor (MOS) transistors are newly proposed as basic components of multiple-valued (MV) logic, such a universal literal gate quantizer. We verified their operation using MOS fabricated on the same wafer by pattern-dependent oxidation silicon. also discuss application to an analog-to-digital converter, MV adder, static random-access memory.
Analytical model for asymmetric single-electron tunneling transistors (SETTs), in which resistance and capacitance parameters of source/drain junctions are not equal, has been developed. The is based on the steady-state master equation, takes only two most-probable charging states into account, therefore very simple. Even so, it can accurately reproduce peculiar behaviors an SETT, such as skew drain current-gate voltage characteristics Coulomb staircase current-drain characteristic....
The authors measured low-temperature (6–28K) conductance in nanoscale p-channel field-effect transistors lightly doped with boron. They observed a modulation, which they ascribed to the trapping/detrapping of single holes by/from individual acceptors. statistics appearance modulation few ten samples indicates that number acceptors is small, or even just one, suggesting what have single-charge-transistor operation by single-acceptor quantum dot.
We report the effect of low-energy (1 keV) electron beam irradiation on gated, three-terminal devices constructed from metallic single-walled carbon nanotubes. Pristine devices, which exhibited negligible gate voltage response at room temperature and single-electron transistor characteristics low temperatures, when exposed to an beam, ambipolar field (room temperature) (low characteristics. This metal−semiconductor transition is attributed inhomogeneous electric fields arising charging...
A single-electron-based circuit, in which electrons are transferred one by with a turnstile and subsequently detected high-charge-sensitivity electrometer, was fabricated on silicon-on-insulator substrate. The turnstile, is operated opening closing two metal-oxide-semiconductor field-effect transistors alternately, allows single-electron transfer at room temperature owing to electric-field-assisted shrinkage of the box. It also achieves fast (less than 10ns) extremely long retention (more...
We have demonstrated numerically and experimentally that quantized electron transfer can be achieved in single-gated random multiple tunnel junctions. Extensive Monte Carlo simulations based on Coulomb blockade orthodox theory show nonhomogeneous distributions of capacitances energetically favor one-by-one shuttling between the electrodes during each cycle a gate voltage. This numerical prediction is supported by our experimental results Si nanowire field-effect transistors with channel...
A common observation in metal-based (specifically, those with AlOx tunnel junctions) single-electron tunneling (SET) devices is a time-dependent instability known as the long-term charge offset drift. This drift not seen Si-based devices. Our aim to understand difference between these, and ultimately overcome comprehensive set of measurements shows that (1) brief over short periods time can mask underlying drift, (2) we have found any reproducible technique eliminate (3) two-level...
Aim: Further to our reports on chip-integrable uncooled terahertz microbolometer arrays, compatible with medium-scale semiconductor device fabrication processes, the possibility of development medical is proposed here. Methods: The concept graphene-based nanopatch antennas design optimization by finite element method (FEM) explored. high-frequency structure simulator (HFSS) utilized fine FEM solver for analyzing empirical mode decomposition preprocessing and modeling simulating graphene...
Proposes merged single-electron and MOS devices that serve as basic components of multiple-valued logic, such a universal literal gate quantizer. We verified their operation by using transistors MOSFETs fabricated on the same wafer pattern-dependent oxidation process. also discuss application to an analog-to-digital converter adder.